Semiconductor memory device

Abstract

A semiconductor memory device includes first structure bodies and second structure bodies arranged alternately along a first direction. The first structure body includes electrode films arranged along a second direction. The second structure body includes columnar members, first insulating members, and second insulating members. The columnar member includes a semiconductor member extending in the second direction and a charge storage member provided between the semiconductor member and the electrode film. The second insulating members are arranged along a third direction. Lengths in the first direction of the second insulating members are longer than lengths in the first direction of the first insulating members. Positions of the second insulating members in the third direction are different from each other between the second structure bodies adjacent to each other in the first direction. The columnar members and the first insulating members are arranged alternately between the second insulating members.

1 . A semiconductor memory device, comprising:
 a plurality of first structure bodies; and   a plurality of second structure bodies,   the plurality of first structure bodies and the plurality of second structure bodies being arranged alternately along a first direction,   the first structure body including a plurality of electrode films arranged to be separated from each other along a second direction crossing the first direction,   the second structure body including
 a plurality of columnar members, the columnar member including a semiconductor member and a charge storage member, the semiconductor member extending in the second direction, the charge storage member being provided between the semiconductor member and the electrode film, 
 a plurality of first insulating members, and 
 a plurality of second insulating members arranged along a third direction crossing the first direction and the second direction, lengths in the first direction of the plurality of second insulating members being longer than lengths in the first direction of the plurality of first insulating members, 
   positions of the second insulating members in the third direction being different from each other between the second structure bodies adjacent to each other in the first direction,   the columnar members and the first insulating members being arranged alternately between the second insulating members.   
     
     
         2 . (canceled) 
     
     
         3 . The device according to  claim 1 , wherein
 the columnar members are arranged at a first period in a first portion of the second structure body,   a distance between centers of the columnar members in the third direction is longer than the first period in a second portion and a third portion of the second structure body,   the second insulating member is disposed in the second portion,   the third portion is positioned between the second portions in the first direction, and   the first portion is positioned between the second portion and the third portion in the third direction.   
     
     
         4 . The device according to  claim 3 , wherein
 the distance between the centers of the columnar members is greater than 3 times but less than 4 times the first period in the second portion, and   the distance between the centers of the columnar members is greater than 3 times but less than 4 times the first period in the third portion.   
     
     
         5 . The device according to  claim 4 , wherein
 the distance between the centers of the columnar members is 3.5 times the first period in the second portion, and   the distance between the centers of the columnar members is 3.5 times the first period in the third portion.   
     
     
         6 .- 12 . (canceled) 
     
     
         13 . A semiconductor memory device, comprising:
 a conductive body;   a stacked body provided on the conductive body, the stacked body including a plurality of electrode films arranged to be separated from each other along a first direction away from the conductive body;   a semiconductor member extending in the first direction, being provided inside the stacked body, and being connected to the conductive body; and   a charge storage member provided between the electrode film and the semiconductor member,   the semiconductor members being arranged periodically along a second direction in a first region and in a second region, the first region and the second region being separated from each other in the second direction, the second direction crossing the first direction,   the arrangement of the semiconductor members in the second region being shifted half a period with respect to the arrangement of the semiconductor members in the first region.   
     
     
         14 .- 15 . (canceled) 
     
     
         16 . The device according to  claim 13 , wherein the arrangement density of the semiconductor members in a third region between the first region and the second region is lower than the arrangement density of the semiconductor members in the first region and the second region. 
     
     
         17 . The device according to  claim 16 , further comprising:
 a first insulating member provided between the semiconductor members in the second direction; and   a second insulating member contacting the first insulating member and being provided in the third region, a length in a third direction of the second insulating member being longer than a length of the first insulating member in the third direction, the third direction crossing the first direction and the second direction.   
     
     
         18 . The device according to  claim 17 , wherein the first insulating member and the second insulating member contact the conductive body. 
     
     
         19 . The device according to  claim 17 , further comprising:
 a first insulating layer provided between the charge storage member and the electrode film; and   a second insulating layer provided between the first insulating layer and the electrode film, a dielectric constant of the second insulating layer being higher than a dielectric constant of the first insulating layer,   the second insulating layer being disposed on a side surface of the first insulating layer and on a side surface of the first insulating member, and not being disposed on a side surface of the second insulating member.   
     
     
         20 . The device according to  claim 13 , further comprising a tunneling insulating film provided between the semiconductor member and the charge storage member.