US2021197506A1PendingUtilityA1

Microlens device and related methods

Assignee: SEMICONDUCTOR COMPONENTS IND LLCPriority: Dec 31, 2019Filed: Mar 31, 2020Published: Jul 1, 2021
Est. expiryDec 31, 2039(~13.4 yrs left)· nominal 20-yr term from priority
H10F 39/024H10F 39/18H10F 39/199H10F 39/026H10F 39/8063H10F 39/806G02B 3/0012G02B 1/11G02B 1/04B29D 11/00365B29D 11/00298G02B 1/041H01L 27/14627H01L 27/14685
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Claims

Abstract

Implementations of semiconductor devices may include: a microlens array formed of a plurality of microlenses. Each of the plurality of microlenses may have a first side and a second side. A layer of polymer may be formed over the second side of each of the plurality of microlenses and a low index box may be between adjacent microlenses of the plurality of microlenses.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A semiconductor device comprising:
 a microlens array formed of a plurality of microlenses, each of the plurality of microlenses having a first side and a second side;   a layer of polymer formed over the second side of each of the plurality of microlenses; and   a low index box between adjacent microlenses of the plurality of microlenses.   
     
     
         2 . The semiconductor device of  claim 1 , wherein the polymer is a fluoropolymer. 
     
     
         3 . The semiconductor device of  claim 1 , wherein the layer of polymer has a widest dimension of 250 nanometers. 
     
     
         4 . The semiconductor device of  claim 1 , further comprising a filter array (CFA) in a box (CIAB) or a composite grid (CG) coupled with the first side of the microlens array. 
     
     
         5 . The semiconductor device of  claim 4 , wherein the CIAB comprises a material having a refractive index of 1.46. 
     
     
         6 . The semiconductor of  claim 1 , wherein the low index box has a refractive index of 1.39. 
     
     
         7 . The semiconductor of  claim 1 , wherein the low index box has a widest dimension of 150 nanometers. 
     
     
         8 . The semiconductor of  claim 1 , wherein the microlens array is formed of a material having a refractive index of 1.6 to 1.8. 
     
     
         9 . A semiconductor device comprising:
 a microlens array formed of a plurality of microlenses, each of the plurality of microlenses having a first side and a second side;   a layer of polymer formed over the second side of each of the plurality of microlenses; and   one or more air gaps in a portion of the layer of polymer between adjacent microlenses of the plurality of microlenses.   
     
     
         10 . The semiconductor device of  claim 9 , wherein the one or more air gaps are positioned in a low index box between each of the plurality of microlenses. 
     
     
         11 . The semiconductor device of  claim 9 , wherein the polymer is a fluoropolymer. 
     
     
         12 . The semiconductor device of  claim 9 , wherein the one or more air gaps have a longest dimension of 400 nanometers. 
     
     
         13 . The semiconductor device of  claim 9 , further comprising one of a color filter array (CFA) in a box (CIAB) or a composite grid (CG) coupled to a first side of the microlens array. 
     
     
         14 . The semiconductor device of  claim 9 , the CIAB comprises a material having a refractive index of 1.46. 
     
     
         15 . A method of forming a semiconductor device, the method comprising:
 providing a semiconductor wafer, the semiconductor wafer comprising a first side and a second side;   forming a planar layer on the second side of the semiconductor wafer;   forming a photoresist layer on the planar layer;   forming a microlens array in the planar layer; and   coupling a polymer over and between each of a microlens of the microlens array.   
     
     
         16 . The method of  claim 15 , wherein coupling a polymer over and between each of the microlenses further comprises forming one or more air gaps in a portion of the layer of polymer surrounding each of the plurality of microlenses. 
     
     
         17 . The method of  claim 16 , wherein the one or more air gaps have a longest dimension of 400 nanometers. 
     
     
         18 . The method of  claim 15 , wherein the polymer comprises a low refractive index of 1.39. 
     
     
         19 . The method of  claim 15 , further comprising coupling a color filter array to the second side of the semiconductor wafer before forming the planar wafer. 
     
     
         20 . The method of  claim 15 , further comprising forming a box in a portion of the layer of polymer surrounding each of the plurality of microlenses, the box comprising a widest dimension of 150 nanometers.

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