Manufacturing method of graphene oxide film, organic light-emitting diode, and manufacturing method thereof

Abstract

A manufacturing method of a graphene oxide film, an organic light-emitting diode (OLED) and a manufacturing method thereof are provided. The OLED includes a substrate, an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, and a cathode stacked in sequence. The hole injection layer is a graphene oxide layer having a concentration ranging from 0.3 to 1 mg/ml. The hole transport layer is any one of N,N′-diphenyl-N,N′-bis(3-tolyl)-1,1′-biphenyl-4,4′-diamine, 1,4-bis(diphenylamino) biphenyl, or N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′-biphenyl-4,4′-diamine.

1 . A manufacturing method of a graphene oxide film, comprising:
 a step S 10  of providing a graphene oxide aqueous solution in an initial concentration which is a specific concentration and dispersing the initial concentration to a first concentration by an ultraviolet reduction process to prepare a first graphene oxide solution;   a step S 20  of putting the first graphene oxide solution into an ultrasonic cleaning apparatus and subjecting the first graphene oxide solution to a shaking water bath in the ultrasonic cleaning apparatus at a first temperature; and   a step S 30  of coating the first graphene oxide solution after being subjected to the shaking water bath to form a graphene oxide film by a spin-coating process.   
     
     
         2 . The manufacturing method of the graphene oxide film according to  claim 1 , wherein in the step S 10 , the first concentration is 0.06-0.2 times as much as the initial concentration. 
     
     
         3 . The manufacturing method of the graphene oxide film according to  claim 1 , wherein in the step S 20 , the first temperature ranges from 20 to 40° C. and duration of subjecting the first graphene oxide solution to the shaking water bath ranges from 2 to 6 hours. 
     
     
         4 . An organic light-emitting diode (OLED), comprising: a substrate, an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, and a cathode stacked in sequence, wherein the hole injection layer is a graphene oxide layer, and the hole transport layer is any one of N,N′-diphenyl-N,N′-bis(3-tolyl)-1,1′-biphenyl-4,4′-diamine, 1,4-bis(diphenylamino) biphenyl, or N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′-biphenyl-4,4′-diamine. 
     
     
         5 . The OLED according to  claim 4 , wherein a concentration of a graphene oxide solution used in the graphene oxide layer ranges from 0.3 to 1 mg/ml. 
     
     
         6 . A manufacturing method of an organic light-emitting diode (OLED), comprising:
 a step S 10  of forming an anode on a cleaned substrate by a magnetron sputtering process to obtain an anode substrate;   a step S 20  of adjusting a concentration of a graphene oxide solution by an ultraviolet reduction process, and then coating the graphene oxide solution on the anode substrate by a spin coating process, and performing a drying treatment to form a hole injection layer; and   a step S 30  of depositing a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, and a cathode on the hole injection layer in sequence by evaporation processes.   
     
     
         7 . The manufacturing method of the OLED according to  claim 6 , wherein the S 20  further comprises:
 a step S 201  of providing a graphene oxide aqueous solution in an initial concentration which is a specific concentration and adjusting the concentration of the graphene oxide solution by the ultraviolet reduction process to prepare a first graphene oxide solution; and 
 a step S 202  of subjecting the first graphene oxide solution to a shaking water bath via an ultrasonic cleaning instrument for 2-6 hours, wherein an ultrasonic process is controlled at 20-40° C., and then coating the first graphene oxide solution on the anode substrate, and performing the drying treatment to form the hole injection layer. 
 
     
     
         8 . The manufacturing method of the OLED according to  claim 7 , wherein in the step S 201 , the first concentration is 0.06 to 0.2 times as much as the initial concentration. 
     
     
         9 . The manufacturing method of the OLED according to  claim 6 , wherein in the step S 30 , an evaporation rate of the light-emitting layer is between 1-4 Å/s, an evaporation rate of the electron injection layer is between 0.1-0.3 Å/s, and an evaporation rate of the cathode is between 1-5 Å/s. 
     
     
         10 . The manufacturing method of the OLED according to  claim 6 , wherein in the step S 30 , material of the light-emitting layer is tris(8-hydroxyquinoline) aluminum, material of the electron injection layer is LiF, and material of the cathode is Al.