Semiconductor device and method for manufacturing semiconductor device

Abstract

A semiconductor device including a first oxide including a first region and a second region adjacent to each other and a third region and a fourth region with the first region and the second region sandwiched between the third region and the fourth region, a second oxide over the first region, a first insulator over the second oxide, a first conductor over the first insulator, a second insulator over the second oxide and on side surfaces of the first insulator and the first conductor, a third insulator over the second region and on a side surface of the second insulator, a second conductor over the second region with the third insulator positioned between the second region and the second conductor and on the side surface of the second insulator with the third insulator positioned between the side surface of the second insulator and the second conductor, and a fourth insulator covering the first oxide, the second oxide, the first insulator, the first conductor, the second insulator, the third insulator, and the second conductor and in contact with the third region and the fourth region.

1 . A semiconductor device comprising:
 a first oxide comprising:
 a first region and a second region adjacent to each other; and 
 a third region and a fourth region with the first region and the second region sandwiched between the third region and the fourth region; 
   a second oxide over the first region;   a first insulator over the second oxide;   a first conductor over the first insulator;   a second insulator over the second oxide and on side surfaces of the first insulator and the first conductor;   a third insulator over the second region and on a side surface of the second insulator;   a second conductor over the second region with the third insulator positioned between the second region and the second conductor and on the side surface of the second insulator with the third insulator positioned between the side surface of the second insulator and the second conductor; and   a fourth insulator covering the first oxide, the second oxide, the first insulator, the first conductor, the second insulator, the third insulator, and the second conductor and in contact with the third region and the fourth region.