US2021172050A1PendingUtilityA1
Sputtering target, method for producing laminated film, laminated film and magnetic recording medium
Assignee: JX NIPPON MINING & METALS CORPPriority: Sep 21, 2017Filed: Aug 16, 2018Published: Jun 10, 2021
Est. expirySep 21, 2037(~11.1 yrs left)· nominal 20-yr term from priority
G11B 5/7369G11B 5/851G11B 5/73917G11B 5/8404C23C 14/025C23C 14/083C23C 14/3407C23C 14/3414C23C 14/06H01J 37/3426G11B 5/656H01F 41/18C23C 14/165G11B 5/70621G11B 5/7353G11B 5/73919G11B 5/73921G11B 5/658
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Claims
Abstract
A sputtering target according to the present invention contains Co and Pt as metal components, wherein a molar ratio of a content of Pt to a content of Co is from 5/100 to 45/100, and wherein the sputtering target contains Nb2O5 as a metal oxide component.
Claims
exact text as granted — not AI-modified1 . A sputtering target containing Co and Pt as metal components, wherein a molar ratio of a content of Pt to a content of Co is from 5/100 to 45/100, and wherein the sputtering target contains Nb 2 O 5 as a metal oxide component.
2 . The sputtering target according to claim 1 , wherein the sputtering target has a content of Nb 2 O 5 of from 0.5 mol % to 5 mol %.
3 . The sputtering target according to claim 1 , wherein the sputtering target further contains TiO 2 as a metal oxide component.
4 . The sputtering target according to claim 3 , wherein the sputtering target has a content of TiO 2 of from 0.5 mol % to 15 mol %.
5 . The sputtering target according to claim 3 , wherein the sputtering target has a phase including all of Ti, Nb and O.
6 . The sputtering target according to claim 1 , wherein the sputtering target further contains at least one metal oxide of SiO 2 and B 2 O 3 as a metal oxide component, and wherein the sputtering target has a total content of metal oxides including Nb 2 O 5 of from 20 vol % to 40 vol %.
7 . The sputtering target according to claim 1 , wherein the sputtering target has a molar ratio of a content of Pt to a content of Co of from 15/100 to 35/100.
8 . The sputtering target according to claim 1 , wherein the sputtering target contains Pt in an amount of from 2 mol % to 25 mol %.
9 . The sputtering target according to claim 1 , wherein the sputtering target further contains Cr and/or Ru as a metal component(s) in an amount of from 0.5 mol % to 20 mol %.
10 . A method for producing a laminated film, the method comprising: forming, by sputtering using the sputtering target according to claim 1 , a magnetic layer on a base layer containing Ru or on an intermediate layer formed on the base layer by sputtering using a sputtering target containing Co and at least one metal selected from the group consisting of Cr and Ru as a metal component.
11 . A laminated film, comprising: a base layer containing Ru; and a magnetic layer directly formed on the base layer or indirectly formed on the base layer via an intermediate layer containing Co and at least one metal selected from the group consisting of Cr and Ru as a metal component, the magnetic layer containing Co and Pt as metal components and having a molar ratio of a content of Pt to a content of Co of from 5/100 to 45/100; wherein the magnetic layer contains Nb 2 O 5 as a metal oxide component.
12 . The laminated film according to claim 11 , wherein the magnetic layer further contains TiO 2 as a metal oxide component.
13 . A magnetic recording medium comprising the laminated film according to claim 11 .Join the waitlist — get patent alerts
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