Method for forming vapor deposition pattern, pressing-plate-integrated type pressing member, vapor deposition apparatus, and method for producing organic semiconductor element
Abstract
In a method for forming a vapor deposition pattern using a vapor deposition mask provided with a plurality of openings corresponding to a pattern that is produced by vapor deposition, and forming a vapor deposition pattern in a vapor deposition target, the method includes a close contact step of disposing the vapor deposition mask on one surface side of the vapor deposition target, disposing a pressing member and a magnetic plate in layer in this order on the other surface side of the vapor deposition target, and bringing the vapor deposition target and the vapor deposition mask into close contact with each other by using magnetism of the magnetic plate, and a vapor deposition pattern forming step of causing a vapor deposition material released from a vapor deposition source to adhere to the vapor deposition target through openings after the close contact step, and forming the vapor deposition pattern in the vapor deposition target.
Claims
exact text as granted — not AI-modified1 . A method for forming a vapor deposition pattern using a vapor deposition mask provided with a plurality of openings corresponding to a pattern that is produced by vapor deposition, and forming the pattern on a vapor deposition target, wherein the vapor deposition mask includes a metal, the method comprising: a close contact step of disposing the vapor deposition mask on one surface side of the vapor deposition target, disposing a pressing member and a magnetic plate in layer in this order on the other surface side of the vapor deposition target, and using magnetism of the magnetic plate to bring the vapor deposition target and the vapor deposition mask into close contact with each other; and a vapor deposition pattern forming step of causing a vapor deposition material released from a vapor deposition source to adhere to the vapor deposition target through the openings after the close contact step, and forming a vapor deposition pattern on the vapor deposition target.
Join the waitlist — get patent alerts
Track US2021156020A1 — get alerts on status changes and closely related new filings.
We store only your email — no account needed. See our privacy policy.