Imaging element, solid state imaging device, and electronic device

Abstract

An imaging element includes a first electrode, a second electrode, and a light receiving layer between the first electrode and the second electrode to receive incident light from the second electrode. The second electrode includes an indium-tin oxide layer which includes at least one of silicon or silicon oxide.

1 . An imaging element comprising:
 a stacked structure including a first electrode, a light receiving layer formed on the first electrode, and a second electrode formed on the light receiving layer, and configured such that light is incident from the second electrode, wherein the second electrode includes an amorphous indium-tin oxide doped or mixed with at least one material selected from the group including cobalt, cobalt oxide, tungsten, tungsten oxide, zinc, or zinc oxide.   
     
     
         2 . The imaging element according to  claim 1 , wherein the second electrode has absorption characteristics of 20% or more at a wavelength of 300 nm and 15% or more at a wavelength of 350 nm. 
     
     
         3 . The imaging element according to  claim 1 , wherein a thickness of the second electrode is 1×10 −8  m to 1.5×10 −7  m. 
     
     
         4 . The imaging element according to  claim 1 , wherein the at least one material is mixed or doped at 5 mass % or less in the second electrode. 
     
     
         5 . The imaging element according to  claim 1 , wherein the at least one material is mixed or doped at 1 mass % or more and 3 mass % or less in the second electrode. 
     
     
         6 . The imaging element according to  claim 1 , wherein a surface roughness Ra of the second electrode is 0.5 nm or less, and a surface roughness Rq of the second electrode is 0.5 nm or less. 
     
     
         7 . The imaging element according to  claim 1 , wherein light transmittance of the second electrode for light of wavelengths of 400 nm to 660 nm is 65% or more. 
     
     
         8 . The imaging element according to  claim 1 , wherein an electric resistance value of the second electrode is 1×10 6  Ω·cm or less. 
     
     
         9 . The imaging element according to  claim 1 , wherein a sheet resistance value of the second electrode is 3×10Ω/□ to 1×10 3 Ω/□. 
     
     
         10 . The imaging element according to  claim 1 , wherein the stacked structure has an internal stress of compressive stress of 10 MPa to 50 MPa. 
     
     
         11 . The imaging element according to  claim 1 , wherein the first electrode includes an amorphous indium-tin oxide mixed or doped with at least one material selected from the group including silicon, silicon oxide, cobalt, cobalt oxide, tungsten, tungsten oxide, zinc, or zinc oxide. 
     
     
         12 . A solid-state imaging device comprising:
 a plurality of imaging elements, wherein each of the plurality of imaging elements includes a stacked structure including a first electrode, a light receiving layer formed on the first electrode, and a second electrode formed on the light receiving layer, and configured such that light is incident from the second electrode, wherein the second electrode includes an amorphous indium-tin oxide doped or mixed with at least one material selected from the group including cobalt, cobalt oxide, tungsten, tungsten oxide, zinc, or zinc oxide.   
     
     
         13 . An electronic device comprising:
 a stacked structure including a first electrode, a light emitting/light receiving layer formed on the first electrode, and a second electrode formed on the light emitting/light receiving layer, and configured such that light is incident from the second electrode, wherein the second electrode includes an amorphous indium-tin oxide doped or mixed with at least one material selected from the group including cobalt, cobalt oxide, tungsten, tungsten oxide, zinc, or zinc oxide.   
     
     
         14 . The electronic device according to  claim 13 , wherein the second electrode has absorption characteristics of 20% or more at a wavelength of 300 nm and 15% or more at a wavelength of 350 nm. 
     
     
         15 . The electronic device according to  claim 13 , wherein a thickness of the second electrode is 1×10 −8  m to 1.5×10 −7  m. 
     
     
         16 . The electronic device according to  claim 13 , wherein the at least one material is mixed or doped at 5 mass % or less in the second electrode. 
     
     
         17 . The electronic device according to  claim 13 , wherein the at least one material is mixed or doped at 1 mass % or more and 3 mass % or less in the second electrode. 
     
     
         18 . The electronic device according to  claim 13 , wherein a surface roughness Ra of the second electrode is 0.5 nm or less, and a surface roughness Rq of the second electrode is 0.5 nm or less. 
     
     
         19 . The electronic device according to  claim 13 , wherein light transmittance of the second electrode for light of wavelengths of 400 nm to 660 nm is 65% or more. 
     
     
         20 . The electronic device according to  claim 13 , wherein an electric resistance value of the second electrode is 1×10 −6  Ω·cm or less. 
     
     
         21 . The electronic device according to  claim 13 , wherein a sheet resistance value of the second electrode is 3×10Ω/□ to 1×10 3 Ω/□. 
     
     
         22 . The electronic device according to  claim 13 , wherein the stacked structure has an internal stress of compressive stress of 10 MPa to 50 MPa. 
     
     
         23 . The electronic device according to  claim 13 , wherein the first electrode includes an amorphous indium-tin oxide mixed or doped with at least one material selected from the group including silicon, silicon oxide, cobalt, cobalt oxide, tungsten, tungsten oxide, zinc, or zinc oxide.