Semiconductor image sensor module, method for manufacturing the same as well as camera and method for manufacturing the same

Abstract

A semiconductor image sensor module 1 at least includes a semiconductor image sensor chip 2 having a transistor forming region on a first main surface of a semiconductor substrate and having a photoelectric conversion region with a light incident surface formed on a second main surface on the side opposite to the first main surface and an image signal processing chip 3 for processing image signals formed in the semiconductor image sensor chip 2, wherein a plurality of bump electrodes 15a are formed on a first main surface, a plurality of bump electrodes 15b are formed on the image signal processing chip 3, both the chips 2 and 3 are formed to be laminated through heat dissipating means 4 and the plurality of bump electrodes 15a of the semiconductor image sensor chip 2 and the plurality of bump electrodes 15b on the image signal processing chip 3 are electrically connected.

What is claimed is: 
     
         1 . A semiconductor device comprising:
 a first substrate that includes an image sensor, a first electrode extends from a surface of the first substrate to an intermediate electrode;   a second substrate that includes an image processing unit or a memory unit, a second electrode extends from a surface of the second substrate to the intermediate electrode; and   an intermediate layer between the surface of the first substrate and the surface of the second substrate, a through-hole extends through the intermediate layer, the intermediate electrode is formed in the through-hole,   wherein the intermediate layer comprises a plate made by one of aluminum, copper, ceramic and resin.   
     
     
         2 . The semiconductor device according to  claim 1 , further comprising:
 a heat sink between the first substrate and the second substrate.   
     
     
         3 . The semiconductor device according to  claim 2 , further comprising:
 bumps between the heat sink between the first substrate.   
     
     
         4 . The semiconductor device according to  claim 2 , further comprising:
 bumps between the heat sink between the second substrate.   
     
     
         5 . A semiconductor device comprising:
 a first substrate that includes an image sensor, a first electrode extends from a surface of the first substrate to an intermediate electrode;   a second substrate that includes an image processing unit or a memory unit, a second electrode extends from a surface of the second substrate to the intermediate electrode; and   an intermediate layer between the surface of the first substrate and the surface of the second substrate, a through-hole extends through the intermediate layer, the intermediate electrode is formed in the through-hole,   wherein the intermediate layer is configured to shield the image processing unit or the memory unit from light passing through the first substrate.   
     
     
         6 . The semiconductor device according to  claim 5 , further comprising:
 a heat sink between the first substrate and the second substrate.   
     
     
         7 . The semiconductor device according to  claim 6 , further comprising:
 bumps between the heat sink between the first substrate.   
     
     
         8 . The semiconductor device according to  claim 6 , further comprising:
 bumps between the heat sink between the second substrate.