3D Integrated Circuit and Methods of Forming the Same

Abstract

An integrated circuit structure includes a package component, which further includes a non-porous dielectric layer having a first porosity, and a porous dielectric layer over and contacting the non-porous dielectric layer, wherein the porous dielectric layer has a second porosity higher than the first porosity. A bond pad penetrates through the non-porous dielectric layer and the porous dielectric layer. A dielectric barrier layer is overlying, and in contact with, the porous dielectric layer. The bond pad is exposed through the dielectric barrier layer. The dielectric barrier layer has a planar top surface. The bond pad has a planar top surface higher than a bottom surface of the dielectric barrier layer.

What is claimed is: 
     
         1 . A three-dimensional bonded semiconductor structure comprising:
 a first semiconductor structure including a first wafer, a first interconnect structure, and a first bonding oxide layer containing first nitride-oxide regions and at least one first metallic bonding structure embedded therein; and   a second semiconductor structure including a second wafer, a second interconnect structure, and a second bonding oxide layer containing second nitride-oxide regions and at least one second metallic bonding structure embedded therein, wherein a bonding interface is present between said first and second nitride-oxide regions and another bonding interface is present between said at least one first and second metallic bonding structures.   
     
     
         2 . The three-dimensional bonded semiconductor structure of  claim 1 , wherein each of said first and second interconnect structures comprises at least one interconnect dielectric material and one or more interconnect metallic structures embedded therein. 
     
     
         3 . The three-dimensional bonded semiconductor structure of  claim 2 , wherein said at least one or more interconnect metallic structures are composed of copper. 
     
     
         4 . The three-dimensional bonded semiconductor structure of  claim 2 , wherein said one or more interconnect metallic structures include a same metal or metal alloy as said at least one first and second metallic bonding structures. 
     
     
         5 . The three-dimensional bonded semiconductor structure of  claim 4 , wherein said same metal or metal alloy comprises copper. 
     
     
         6 . The three-dimensional bonded semiconductor structure of  claim 1 , wherein at least one said first and second metallic bonding structures are composed of copper. 
     
     
         7 . The three-dimensional bonded semiconductor structure of  claim 1 , wherein said at least one first metallic bonding structure extends entirely through said first bonding oxide layer and contacts at least a portion of an interconnect metallic structure of said first interconnect structure, and said at least one second metallic bonding structure extends entirely through said second bonding oxide layer and contacts at least a portion of an interconnect metallic structure of said second interconnect structure. 
     
     
         8 . The three-dimensional bonded semiconductor structure of  claim 1 , wherein the first bonding oxide layer comprises:
 a first oxide layer with a first porosity; and   a second oxide layer with a second porosity different from the first porosity.   
     
     
         9 . A three-dimensional bonded semiconductor structure comprising:
 a first semiconductor substrate;   a first oxide layer over the first semiconductor substrate;   a first nitrogen-oxygen layer along a top surface of the first oxide layer;   a first metallic bonding structure embedded within both the first nitrogen-oxygen layer and the first oxide layer;   a second nitrogen-oxygen layer bonded to the first nitrogen-oxygen layer;   a second oxide layer along a surface of the second nitrogen-oxygen layer;   a second metallic bonding structure embedded within both the second nitrogen-oxygen layer and the second oxide layer; and   a second semiconductor substrate over the second oxide layer.   
     
     
         10 . The three-dimensional bonded semiconductor structure of  claim 9 , further comprising a first interconnect structure located between the first semiconductor substrate and the first oxide layer. 
     
     
         11 . The three-dimensional bonded semiconductor structure of  claim 10 , wherein the first interconnect structure comprises at least one interconnect conductive structure, the at least one interconnect conductive structure composed of copper. 
     
     
         12 . The three-dimensional bonded semiconductor structure of  claim 8 , wherein the first interconnect structure comprises at least one interconnect conductive structure, wherein said one or more interconnect conductive structure includes a same metal or metal alloy as said first metallic bonding structure. 
     
     
         13 . The three-dimensional bonded semiconductor structure of  claim 12 , wherein the same metal or metal alloy comprises copper. 
     
     
         14 . The three-dimensional bonded semiconductor structure of  claim 8 , wherein the first nitrogen-oxygen layer comprises silicon oxynitride. 
     
     
         15 . A three-dimensional bonded semiconductor structure comprising:
 first layer bonded to a second layer along an interface, wherein each of the first layer and the second layer comprises nitrogen and oxygen;   a first oxide layer on an opposite side of the first layer from the interface;   a second oxide layer on an opposite side of second layer from the interface;   a first metallization layer on an opposite side of the first oxide layer from the interface;   a second metallization layer on an opposite side of the second oxide layer from the interface;   a first semiconductor substrate on an opposite side of the first metallization layer from the interface;   a second semiconductor substrate on an opposite side of the second metallization layer from the interface;   a first conductive structure extending through the first layer and the first oxide layer; and   a second conductive structure extending through the second layer and the second oxide layer, the second conductive structure being bonded to the first conductive structure.   
     
     
         16 . The three-dimensional bonded semiconductor structure of  claim 15 , wherein the first metallization layer comprises at least one interconnect conductive structure, the at least one interconnect conductive structure composed of copper. 
     
     
         17 . The three-dimensional bonded semiconductor structure of  claim 15 , wherein the first layer comprises silicon oxynitride. 
     
     
         18 . The three-dimensional bonded semiconductor structure of  claim 17 , wherein the second layer comprises silicon oxynitride. 
     
     
         19 . The three-dimensional bonded semiconductor structure of  claim 15 , wherein the first oxide layer comprises a first oxide sub-layer with a first porosity and a second oxide sub-layer with a second porosity different from the first porosity. 
     
     
         20 . The three-dimensional bonded semiconductor structure of  claim 19 , wherein the second oxide layer comprises a third oxide sub-layer with the first porosity and a fourth oxide sub-layer with the second porosity.