Micro light-emitting diode (led) elements and display

Abstract

Micro light-emitting diode (LED) displays and assembly apparatuses are described. In an example, a pixel element for a micro-light emitting diode (LED) display panel includes a first color nanowire LED, a second color nanowire LED, the second color different than the first color, and a pair of third color nanowire LEDs, the third color different than the first and second colors. A continuous insulating material layer ius laterally surrounding the first color nanowire LED, the second color nanowire LED, and the pair of third color nanowire LEDs.

What is claimed is: 
     
         1 . A red-emitting diode structure, comprising:
 an InGaN nanowire core above a substrate; and   an InGaN active layer on the InGaN nanowire core, wherein the InGaN active layer has a greater concentration of In than the InGaN nanowire.   
     
     
         2 . The red-emitting diode structure of  claim 1 , wherein the InGaN nanowire core is an In 0.2 Ga 0.8 N material nanowire core. 
     
     
         3 . The red-emitting diode structure of  claim 2 , wherein the InGaN active layer is an In 0.4 Ga 0.6 N material layer. 
     
     
         4 . The red-emitting diode structure of  claim 1 , further comprising:
 a cladding layer on the InGaN active layer, the cladding layer comprising p-type GaN or p-type ZnO.   
     
     
         5 . The red-emitting diode structure of  claim 1 , wherein the InGaN active layer emits a wavelength in the range of 610-630 nanometers. 
     
     
         6 . The red-emitting diode structure of  claim 1 , wherein the substrate is a silicon substrate or a sapphire substrate. 
     
     
         7 . A light-emitting diode, comprising:
 a red-emitting diode structure having sidewalls and a tapered portion the red-emitting diode structure, comprising:
 an InGaN nanowire core above a substrate; and 
 an InGaN active layer on the InGaN nanowire core, wherein the InGaN active layer has a greater concentration of In than the InGaN nanowire core; 
   a contact metal over and along the sidewalls and the tapered portion of the red-emitting diode structure, the contact metal having a non-uniform thickness over the red-emitting diode structure; and   an insulating material layer laterally surrounding contact metal, the insulating material layer having a surface co-planar with a surface of the contact metal.   
     
     
         8 . The light-emitting diode of  claim 7 , wherein the InGaN nanowire core is an In 0.2 Ga 0.8 N material nanowire core. 
     
     
         9 . The light-emitting diode of  claim 8 , wherein the InGaN active layer is an In 0.4 Ga 0.6 N material layer. 
     
     
         10 . The light-emitting diode of  claim 7 , wherein the InGaN active layer emits a wavelength in the range of 610-630 nanometers. 
     
     
         11 . A method of fabricating a red-emitting diode structure, the method comprising:
 forming an InGaN nanowire core above a substrate; and   forming an InGaN active layer on the InGaN nanowire core, wherein the InGaN active layer has a greater concentration of In than the InGaN nanowire.   
     
     
         12 . The method of  claim 11 , wherein the InGaN nanowire core is an In 0.2 Ga 0.8 N material nanowire core. 
     
     
         13 . The method of  claim 12 , wherein the InGaN active layer is an In 0.4 Ga 0.6 N material layer. 
     
     
         14 . The method of  claim 11 , further comprising:
 forming a cladding layer on the InGaN active layer, the cladding layer comprising p-type GaN or p-type ZnO.   
     
     
         15 . The method of  claim 11 , wherein the InGaN active layer emits a wavelength in the range of 610-630 nanometers. 
     
     
         16 . The method of  claim 11 , wherein the substrate is a silicon substrate or a sapphire substrate. 
     
     
         17 . An electronic device, comprising:
 a processor; and   a display coupled to the processor, the display comprising:
 a backplane; and 
 a red-emitting diode structure coupled to the backplane, the red-emitting diode structure comprising:
 an InGaN nanowire core above a substrate; and 
 an InGaN active layer on the InGaN nanowire core, wherein the InGaN active layer has a greater concentration of In than the InGaN nanowire core. 
 
   
     
     
         18 . The electronic device of  claim 17 , further comprising:
 a memory coupled to the display.   
     
     
         19 . The electronic device of  claim 17 , further comprising:
 a battery coupled to the display.   
     
     
         20 . The electronic device of  claim 17 , further comprising:
 a network interface coupled to the display.   
     
     
         21 . The electronic device of  claim 17 , wherein the microelectronic device is a mobile device selected from the group consisting of a smartphone, a tablet, a notebook, and a smartwatch. 
     
     
         22 . The electronic device of  claim 17 , wherein the microelectronic device is a device selected from the group consisting of a computing device, a television, and a vehicle computer display.