Imaging element, stacked-type imaging element, imaging apparatus and electronic apparatus

Abstract

There is provided an imaging device including an upper electrode; a lower electrode; a photoelectric conversion layer disposed between the upper electrode and the lower electrode; and a first organic semiconductor material including an indolocarbazole derivative and disposed between the upper electrode and the lower electrode. Further, there is provided an electronic apparatus including an imaging device that includes an upper electrode; a lower electrode; a photoelectric conversion layer disposed between the upper electrode and the lower electrode; and a first organic semiconductor material including an indolocarbazole derivative and disposed between the upper electrode and the lower electrode.

1 - 23 . (canceled) 
     
     
         24 . A light detecting device, comprising:
 a first electrode;   a second electrode;   a photoelectric conversion layer disposed between the first electrode and the second electrode; and   a first buffer layer comprising an indolocarbazole derivative, the first buffer layer being disposed between the first electrode and the photoelectric conversion layer.   
     
     
         25 . The light detecting device according to  claim 24 , wherein the photoelectric conversion layer comprises a first organic semiconductor having a highest occupied molecular orbital level or a work function, the highest occupied molecular orbital level of the first organic semiconductor being shallowest highest occupied molecular orbital level in the photoelectric conversion layer or the work function of the first organic semiconductor being shallowest working function in the photoelectric conversion layer. 
     
     
         26 . The light detecting device according to  claim 25 , wherein the highest occupied molecular orbital level or the work function of the first organic semiconductor is −5.6 eV to −5.7 eV. 
     
     
         27 . The light detecting device according to  claim 25 , wherein a difference between a highest occupied molecular orbital level or a work function of the indolocarbazole derivative and the highest occupied molecular orbital level or the work function of the first organic semiconductor is in the range of ±0.2 eV. 
     
     
         28 . The light detecting device according to  claim 25 , wherein the first organic semiconductor is a p-type semiconductor. 
     
     
         29 . The light detecting device according to  claim 24 , wherein the indolocarbazole derivative is selected from the group consisting of: 
       
         
           
           
               
               
           
         
         
           
           
               
               
           
         
         wherein in the formulas (1) to (10), Ar1 to Ar24 each independently represent an aryl group; and R1 to R108 each independently represent a hydrogen group, an alkyl group, an aryl group, an arylamino group, an aryl group having an arylamino group as a substituent, or a carbazolyl group. 
       
     
     
         30 . The imaging device according to  claim 29 , wherein the formulas (1) to (10) are further selected from the group consisting of: 
       
         
           
           
               
               
           
         
         
           
           
               
               
           
         
         
           
           
               
               
           
         
         
           
           
               
               
           
         
         
           
           
               
               
           
         
       
     
     
         31 . The imaging device according to  claim 29 , wherein the formulas (1) to (10) are further selected from the group consisting of: 
       
         
           
           
               
               
           
         
         
           
           
               
               
           
         
         
           
           
               
               
           
         
         
           
           
               
               
           
         
       
     
     
         32 . The imaging device according to  claim 29 , wherein the formulas (1) to (10) are further selected from the group consisting of: 
       
         
           
           
               
               
           
         
         
           
           
               
               
           
         
         
           
           
               
               
           
         
         
           
           
               
               
           
         
         
           
           
               
               
           
         
         
           
           
               
               
           
         
         
           
           
               
               
           
         
       
     
     
         33 . The imaging device according to  claim 24 , wherein an indolocarbazole skeleton of the indolocarbazole derivative has intramolecular symmetry and a 5-membered pyrrole ring. 
     
     
         34 . The imaging device according to  claim 24 , wherein a mother skeleton of the indolocarbazole derivative has a large size and has no molecular rotation when heat, light and voltage are applied to the mother skeleton. 
     
     
         35 . The imaging device according to  claim 34 , wherein the mother skeleton of the indolocarbazole derivative has no molecular rotation when heat, light and voltage are applied simultaneously to the mother skeleton. 
     
     
         36 . The imaging device according to  claim 24 , wherein the second electrode comprises indium-zinc oxide. 
     
     
         37 . The imaging device according to  claim 24 , wherein the first electrode comprises indium-tin oxide. 
     
     
         38 . The imaging device according to  claim 24 , further comprising a first semiconductor material disposed adjacent to the first organic semiconductor material. 
     
     
         39 . The imaging device according to  claim 38 , wherein the first semiconductor material comprises at least one material selected from the group consisting of triarylamine compounds, benzidine compounds, styrylamine compounds, carbazole derivatives, naphthalene derivatives, anthracene derivatives, phenanthrene derivatives, pyrene derivatives, perylene derivatives, tetracene derivatives, pentacene derivatives, picene derivatives, chrysene derivatives, fluoranthene derivatives, phthalocyanine derivatives, subphthalocyanine derivatives, hexaazatriphenylene derivatives, metal complexes having a heterocyclic compound as a ligand thienoacene materials typified bybenzothienothiophene (BTBT) derivatives, dinaphthothienothiophene (DNTT) derivatives, dianthracenothienothiophene (DATT) derivatives, benzobisbenzothiophene (BBBT) derivatives, thienobisbenzothiophene (TBBT) derivatives, dibenzothienobisbenzothiophene (DBTBT) derivatives, dithienobenzodithiophene (DTBDT) derivatives, dibenzothienodithiophene (DBTDT) derivatives, benzodithiophene (BDT) derivatives, naphthodithiophene (NDT) derivatives, anthracenodithiophene (ADT) derivatives, tetracenodithiophene (TDT) derivatives and pentacenodithiophene (PDT) derivatives, poly(3,4-ethylenedioxythiophene)/polystyrenesulfonicacid (PEDOT/PSS), polyaniline, molybdenum oxide (MoOx), ruthenium oxide (RuOx), vanadium oxide (VOx), and tungsten oxide (WOx). 
     
     
         40 . The imaging device according to  claim 24 , wherein the photoelectric conversion layer comprises at least two materials selected from the group consisting of a naphthalene derivative, an anthracene derivative, a phenanthrene derivative, a pyrene derivative, a perylene derivative, a tetracene derivative, a pentacene derivative, a quinacridone derivative, a picene derivative, a chrysene derivative, a fluoranthene derivative, a phthalocyanine derivative, a subphthalocyanine derivative, a metal complex having a heterocyclic compound as a ligand, a thienoacene material typified by a benzothienothiophene (BTBT) derivative, a dinaphthothienothiophene (DNTT) derivative, a dianthracenothienothiophene (DATT) derivative, a benzobisbenzothiophene (BBBT) derivative, a thienobisbenzothiophene (TBBT) derivative, a dibenzothienobisbenzothiophene (DB TBT) derivative, a dithienobenzodithiophene (DTBDT) derivative, a dibenzothienodithiophene (DBTDT) derivative, a benzodithiophene (BDT) derivative, a naphthodithiophene (NDT) derivative, an anthracenodithiophene (ADT) derivative, a tetracenodithiophene (TDT) derivative, a pentacenodithiophene (PDT) derivative, and a compound represented by the following formula (11) 
       
         
           
           
               
               
           
         
         wherein, R 109  to R 112  each independently represent a hydrogen group, an alkyl group, an aryl group, an arylamino group, or a carbazolyl group, organic semiconductors having HOMO levels and LUMO levels higher than those of p-type organic semiconductors, transparent inorganic metal oxides, a heterocyclic compound containing a nitrogen atom and an oxygen atom and a sulfur atom, organic molecules, organometallic complexes and subphthalocyanine derivatives having pyridine, pyrazine, pyrimidine, triazine, quinoline, quinoxaline, isoquinoline, acridine, phenazine, phenanthroline, tetrazole, pyrazole, imidazole, thiazole, oxazole, benzimidazole, benzotriazole, benzoxazole, carbazole, benzofuran, dibenzofuran, fullerenes, and fullerene derivatives. 
       
     
     
         41 . The imaging device according to  claim 24 , wherein the photoelectric conversion layer comprises at least one materials selected from the group consisting of crystalline silicon, amorphous silicon, microcrystalline silicon, crystalline selenium, amorphous selenium, and compound semiconductors such as chalcopyrite compounds such as CIGS (CuInGaSe), CIS (CuInSe 2 ), CuInS 2 , CuAlS 2 , CuAlSe 2 , CuGaS 2 , CuGaSe 2 , AgAIS 2 , AgAlSe 2 , AginS 2  and AglnSe 2 , or group III-V compounds such as GaAs, InP, Al GaAs, InGaP, AlGalnP and InGaAsP, and CdSe, CdS, lmSe 3 , In 2 S 3 , BhSe 3 , BhS 3 , ZnSe, ZnS, PbSe, PbS, and quantum dots formed of these materials. 
     
     
         42 . The imaging device according to  claim 24 , further comprising a second buffer layer disposed between the photoelectric conversion layer and the second electrode, wherein the second buffer layer comprises a compound selected from the group consisting of pyridine, quinoline, acridine, indole, imidazole, benzimidazole, phenanthroline, and fullerenes, and derivatives thereof, and combinations thereof. 
     
     
         43 . An electronic apparatus, comprising:
 a lens;   signal processing circuitry; and   a light detecting device comprising:
 a first electrode; 
 a second electrode; 
 a photoelectric conversion layer disposed between the first electrode and the second electrode; and 
 a first buffer layer comprising an indolocarbazole derivative, the first buffer layer being disposed between the first electrode and the photoelectric conversion layer.