Systems and methods for precision fabrication of an orifice within an integrated circuit

Abstract

A system and method for fabricating an orifice in a multi-layered semiconductor substrate and singulation of the semiconductor substrate includes adding a sacrificial layer of material to a first surface of a semiconductor substrate; subsequently, removing a first radius of a first depth of material from the semiconductor substrate along a direction normal to the first surface, the removal of the first depth of material uses a first removal technique that removes the first depth of material; and removing a second radius of a second depth of material from the semiconductor substrate along the direction normal to the first surface based on the removal of the first depth of material, the removal of the second depth of material uses a second removal technique.

What is claimed is: 
     
         1 . A method for singulation of a multi-layered semiconductor substrate, the method comprising:
 providing a sacrificial layer of material to a first surface of a semiconductor substrate;   setting a singulation frame opposing the first surface of the semiconductor substrate;   subsequently, removing a first depth of material from the semiconductor substrate along a direction normal to the first surface based on the setting of the singulation frame, the removal of the first depth of material uses a first removal technique that removes the first depth of material;   removing a second depth of material from the semiconductor substrate along the direction normal to the first surface based on the removal of the first depth of material, the removal of the second depth of material uses a second removal technique; and   severing a first portion of the semiconductor substrate from a second portion of the semiconductor substrate based on (i) the removal of the first depth of material and (ii) the removal of the second depth of material.