Carrier ring used in a deposition chamber

Abstract

A carrier ring used in a deposition chamber includes an annular disk body comprising an annular wafer support region, an annular peripheral region, and an annular transition region between the annular wafer support region and the annular peripheral region. The annular peripheral region has a top carrier ring surface. The annular wafer support region has a lower carrier ring surface that is in physical contact with a wafer during processing. The annular transition region has a slope between the top carrier ring surface and the lower carrier ring surface. The slope downwardly inclines from the top carrier ring surface toward the wafer.

What is claimed is: 
     
         1 . A carrier ring used in a deposition chamber, comprising:
 an annular disk body comprising an annular wafer support region, an annular peripheral region, and an annular transition region between the annular wafer support region and the annular peripheral region;   wherein the annular peripheral region comprises a top carrier ring surface, the annular wafer support region has a lower carrier ring surface that is in physical contact with a wafer during wafer delivery, and the annular transition region comprises a slope between the top carrier ring surface and the lower carrier ring surface;   and wherein the slope downwardly inclines from the top carrier ring surface toward the lower carrier ring surface.   
     
     
         2 . The carrier ring according to  claim 1 , wherein a step height is disposed between the slope and the lower carrier ring surface. 
     
     
         3 . The carrier ring according to  claim 2 , wherein the step height ranges between 0.3 mm and 0.6 mm. 
     
     
         4 . The carrier ring according to  claim 1 , wherein the annular transition region has a thickness that increases with a radius of the annular disk body. 
     
     
         5 . The carrier ring according to  claim 1 , wherein the slope is connected to the top carrier ring surface at a first top-facing corner. 
     
     
         6 . The carrier ring according to  claim 5 , wherein the first top-facing corner has an angle ranging between 100° and 180°. 
     
     
         7 . The carrier ring according to  claim 6  further comprising a sidewall surface between the slope and the lower carrier ring surface. 
     
     
         8 . The carrier ring according to  claim 7 , wherein a slit is situated between the sidewall surface and a peripheral edge of the wafer during processing. 
     
     
         9 . The carrier ring according to  claim 7 , wherein the slope is connected to the sidewall surface at a second top-facing corner. 
     
     
         10 . The carrier ring according to  claim 9 , wherein the second top-facing corner has an angle ranging between 95° and 150°. 
     
     
         11 . The carrier ring according to  claim 1 , wherein the slope is lower than a top surface of the wafer during processing. 
     
     
         12 . A chamber for processing deposition on a wafer, comprising:
 a wafer holder having a central surface region for placing a wafer and a carrier ring support surface encircling the central surface region; and   a carrier ring disposed on the carrier ring support surface, the carrier ring comprising an annular disk body comprising an annular wafer support region, an annular peripheral region, and an annular transition region between the annular wafer support region and the annular peripheral region, wherein the annular peripheral region comprises a top carrier ring surface, the annular wafer support region has a lower carrier ring surface that is in physical contact with a wafer during processing, and the annular transition region comprises a slope between the top carrier ring surface and the lower carrier ring surface.   
     
     
         13 . The chamber according to  claim 12 , wherein the slope downwardly inclines from the top carrier ring surface toward the lower carrier ring surface. 
     
     
         14 . The chamber according to  claim 12 , wherein the carrier ring support surface is a step down from the central surface region. 
     
     
         15 . The chamber according to  claim 12 , wherein a step height is disposed between the slope and the lower carrier ring surface. 
     
     
         16 . The chamber according to  claim 12 , wherein the transition region has a thickness that increases with a radius of the annular disk body. 
     
     
         17 . The chamber according to  claim 12 , wherein the carrier ring further comprises a sidewall surface between the slope and the lower carrier ring surface. 
     
     
         18 . The chamber according to  claim 17 , wherein a slit is situated between the sidewall surface and a peripheral edge of the wafer during processing.