Methods of Manufacturing Semiconductor Devices

Abstract

A semiconductor device and method of making a conductive connector is provided. In an embodiment an opening is formed within a photoresist by adjusting the center point of an in-focus area during the exposure process. Once the photoresist has been developed to form an opening, an after development baking process is utilized to reshape the opening. Once reshaped, a conductive material is formed into the opening to take on the shape of the opening.

What is claimed is: 
     
         1 . A semiconductor device comprising:
 an encapsulant encapsulating a semiconductor device and a through via, wherein the through via extends from a first side of the encapsulant to a second side of the encapsulant;   a redistribution layer over the encapsulant; and   an external connector electrically connected to the redistribution layer, wherein the external connector has a flare angle of between about 45° and about 85°, the flare angle extending from a first sidewall within a passivation layer to a second sidewall parallel with the first sidewall.   
     
     
         2 . The semiconductor device of  claim 1 , wherein the through via comprises a seed layer. 
     
     
         3 . The semiconductor device of  claim 1 , further comprising a solder ball in physical contact with the external connector, the solder ball having an elliptical shape. 
     
     
         4 . The semiconductor device of  claim 1 , further comprising a solder ball in physical contact with the external connector, the solder ball having a round shape. 
     
     
         5 . The semiconductor device of  claim 1 , further comprising:
 a passivation layer over the encapsulant; and   a seed layer located between the external connector and the passivation layer, the seed layer having a straight sidewall perpendicular to a surface of the passivation layer.   
     
     
         6 . The semiconductor device of  claim 5 , wherein a distance from the first sidewall and the second sidewall, in a direction perpendicular to the surface of the passivation layer, is between about 0.5 μm and about 11 μm. 
     
     
         7 . The semiconductor device of  claim 1 , wherein the external connector is a copper pillar. 
     
     
         8 . A semiconductor device comprising:
 an external connector comprising:
 a first sidewall; 
 a second sidewall parallel with the first sidewall; and 
 a connecting sidewall connecting the first sidewall and the second sidewall, the connecting sidewall having a flare angle of between about 10° and about 85° ; 
   a redistribution layer electrically connected to the external connector;   a semiconductor die electrically connected to the redistribution layer;   a through via electrically connected to the redistribution layer; and   an encapsulant encapsulating the semiconductor die and the through via.   
     
     
         9 . The semiconductor device of  claim 8 , wherein the external connector is a copper pillar. 
     
     
         10 . The semiconductor device of  claim 8 , further comprising a seed layer located between the external connector and the redistribution layer. 
     
     
         11 . The semiconductor device of  claim 10 , further comprising a passivation layer adjacent to the seed layer, the seed layer having a straight sidewall perpendicular to a surface of the passivation layer, the straight sidewall extending from the passivation layer to the external connector. 
     
     
         12 . The semiconductor device of  claim 8 , further comprising a solder ball in physical contact with the external connector, the solder ball having a round shape. 
     
     
         13 . The semiconductor device of  claim 8 , further comprising a solder ball in physical contact with the external connector, the solder ball having an elliptical shape. 
     
     
         14 . The semiconductor device of  claim 8 , wherein the through via comprises a seed layer and a bulk layer, the bulk layer in physical contact with the redistribution layer. 
     
     
         15 . A semiconductor device comprising:
 a semiconductor die;   an encapsulant encapsulating the semiconductor die;   a through encapsulant via extending from a first side of the encapsulant to a second side of the encapsulant;   a passivation layer over the encapsulant; and   an external connector over the encapsulant, the external connector comprising:
 a first portion with a first width, the first portion extending through the passivation layer; 
 a second portion with a second width larger than the first width, the second portion being located outside of the passivation layer; and 
 a tapered portion extending from the second portion to the first portion. 
   
     
     
         16 . The semiconductor device of  claim 15 , wherein the tapered portion is located at a tapered angle to a line, the line being parallel with a major surface of the encapsulant, the tapered angle being between about 10° and about 85°. 
     
     
         17 . The semiconductor device of  claim 15 , further comprising a solder ball in physical contact with the external connector, the solder ball having an oval shape. 
     
     
         18 . The semiconductor device of  claim 17 , further comprising a solder ball in physical contact with the external connector, the solder ball having a round shape. 
     
     
         19 . The semiconductor device of  claim 15 , further comprising a seed layer located between the external connector and the passivation layer, the seed layer having a straight sidewall perpendicular to a surface of the passivation layer. 
     
     
         20 . The semiconductor device of  claim 15 , further comprising a redistribution layer located between the external connector and the encapsulant.