Display apparatus and method of manufacturing the same

Abstract

A display apparatus includes a base substrate, a first organic insulating layer disposed on the base substrate, and a second conductive pattern disposed on the first organic insulating layer. The conductive pattern includes a first layer that includes a first metal and that has a first thickness. A diffusion layer that makes contact with the first layer and that includes an oxide of the first metal and has a second thickness less than the first thickness is formed at an uppermost portion of the first organic insulating layer.

What is claimed is: 
     
         1 . A display apparatus, comprising:
 a base substrate;   a first organic insulating layer disposed on the base substrate; and   a second conductive pattern disposed on the first organic insulating layer,   wherein the second conductive pattern includes a first layer that includes a first metal and that has a first thickness, and   wherein a diffusion layer that makes contact with the first layer and that includes an oxide of the first metal and that has a second thickness less than the first thickness is formed at an uppermost portion of the first organic insulating layer.   
     
     
         2 . The display apparatus of  claim 1 , wherein the second thickness is equal to or less than 40% that of the first thickness. 
     
     
         3 . The display apparatus of  claim 1 , wherein the first metal includes titanium, the diffusion layer includes titanium, oxygen, and fluorine, and the first organic insulating layer includes a polyimide-based resin. 
     
     
         4 . The display apparatus of  claim 1 , wherein the first thickness is from 41 nm to 45 nm, and the second thickness is 15 nm or less. 
     
     
         5 . The display apparatus of  claim 1 , wherein the second conductive pattern includes the first layer, a second layer disposed on the first layer, and a third layer disposed on the second layer, wherein the first and third layers include titanium, and the second layer includes aluminum. 
     
     
         6 . The display apparatus of  claim 1 , further comprising:
 a first conductive pattern disposed between the base substrate and the first organic insulating layer,   wherein the first conductive pattern and the second conductive pattern at least partially overlap each other.   
     
     
         7 . The display apparatus of  claim 6 , wherein the first conductive pattern includes a first data line, and
 wherein the second conductive pattern includes a second data line that at least partially overlaps the first data line.   
     
     
         8 . The display apparatus of  claim 6 , further comprising:
 a thin film transistor disposed on the base substrate;   an insulating layer disposed between the first organic insulating layer and the base substrate and that covers the thin film transistor;   a second organic insulating layer disposed on the second conductive pattern; and   a light emitting structure disposed on the second organic insulating layer.   
     
     
         9 . A method of manufacturing a display apparatus, the method comprising:
 forming a first organic insulating layer on a base substrate;   heating a top surface of the first organic insulating layer;   forming a conductive layer that includes a first layer that has a first thickness and that includes a first metal, on the first organic insulating layer; and   forming a second conductive pattern by patterning the conductive layer,   wherein a diffusion layer that makes contact with the first layer and that includes an oxide of the first metal and that has a second thickness less than the first thickness is formed at an uppermost portion of the first organic insulating layer.   
     
     
         10 . The method of  claim 9 , wherein the first layer is formed by a sputtering scheme when the conductive layer is formed. 
     
     
         11 . The method of  claim 9 , further comprising:
 cleaning the top surface of the first organic insulating layer by using a cleaning fluid before heating the top surface of the first organic insulating layer.   
     
     
         12 . The method of  claim 11 , wherein heating the top surface of the first organic insulating layer comprises heat-treating the top surface at a temperature between 60 degrees and 150 degrees for a time of at least 16 seconds. 
     
     
         13 . The method of  claim 9 , further comprising:
 forming a first conductive pattern on the base substrate before forming the first organic insulating layer,   wherein the first conductive pattern and the second conductive pattern at least partially overlap each other.   
     
     
         14 . The method of  claim 9 , further comprising:
 forming a second organic insulating layer on the second conductive pattern; and   forming a light emitting structure on the second organic insulating layer.   
     
     
         15 . The method of  claim 9 , wherein the second conductive pattern includes the first layer, a second layer formed on the first layer, and a third layer formed on the second layer, wherein the first and third layers include titanium, and the second layer includes aluminum. 
     
     
         16 . The method of  claim 9 , wherein the second thickness is equal to or less than 40% that of the first thickness. 
     
     
         17 . The method of  claim 9 , wherein the first metal includes titanium, and the diffusion layer includes titanium, oxygen, and fluorine. 
     
     
         18 . The method of  claim 9 , wherein the first organic insulating layer includes a polyimide-based resin. 
     
     
         19 . A method of manufacturing a display apparatus, the method comprising:
 forming a first organic insulating layer on a base substrate;   forming a conductive layer that includes a first layer that has a first thickness and that includes a first metal on the first organic insulating layer by using a sputtering scheme; and   forming a second conductive pattern by patterning the conductive layer,   wherein a diffusion layer that makes contact with the first layer and that includes an oxide of the first metal and that has a second thickness less than the first thickness is formed at an uppermost portion of the first organic insulating layer.   
     
     
         20 . The method of  claim 19 , wherein a plasma having an electric, power of 40 kW or less is used in the sputtering scheme.