US2021104709A1PendingUtilityA1

Flexible oled device, method for manufacturing same, and support substrate

Assignee: SAKAI DISPLAY PRODUCTS CORPPriority: Mar 20, 2018Filed: Dec 15, 2020Published: Apr 8, 2021
Est. expiryMar 20, 2038(~11.6 yrs left)· nominal 20-yr term from priority
H10K 59/12H10K 71/00H10K 71/80Y02P70/50H05B 33/10Y02E10/549H01L 2251/5338H01L 51/0097H01L 51/56H10K 2102/311H10K 77/111
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Claims

Abstract

According to a flexible OLED device production method of the present disclosure, a multilayer stack (100) is provided, the multilayer stack including a base (10), a functional layer region (20) which includes a TFT layer and an OLED layer, a flexible film (30) provided between the base and the functional layer region and supporting the functional layer region, and a dielectric multilayer film mirror (36) provided between the flexible film and the functional layer region. The flexible film is irradiated with lift-off light (216) transmitted through the base, whereby the flexible film is delaminated from the base.

Claims

exact text as granted — not AI-modified
1 . A flexible OLED device comprising:
 a functional layer region which includes a TFT layer and an OLED layer;   a flexible film supporting the functional layer region; and   a dielectric multilayer film mirror provided between the flexible film and the functional layer region,   wherein a reflectance of the dielectric multilayer film mirror for laser light having a wavelength of 355 nm is lower than a reflectance of the dielectric multilayer film mirror for laser light having a wavelength of 308 nm.   
     
     
         2 . The flexible OLED device of  claim 1 , wherein the dielectric multilayer film mirror includes
 three or more high refractive index layers each having a first refractive index, and   two or more low refractive index layers each having a second refractive index that is lower than the first refractive index and provided between the three or more high refractive index layers.   
     
     
         3 . The flexible OLED device of  claim 1 , wherein the TFT layer includes a polycrystallized semiconductor layer. 
     
     
         4 . The flexible OLED device of  claim 2  wherein a total thickness of the high refractive index layers included in the dielectric multilayer film mirror is not less than 100 nm. 
     
     
         5 . The flexible OLED device of  claim 2  wherein
 each of the high refractive index layer is made of at least one material selected from the group consisting of Si 3 N 4 , SiN x , Al 2 O 3 , HfO 2 , SC 2 O 3 , Y 2 O 3 , ZrO 2 , Ta 2 O 5 , TiO 2  and Nb 2 O 5 , and 
 each of the low refractive index layer is made of at least one material selected from the group consisting of SiO 2 , MgF 2 , CaF 2 , AlF 3 , YF 3 , LiF and NaF. 
 
     
     
         6 . The flexible OLED device of  claim 1 , wherein a thickness of the flexible film is not less than 5 μm and not more than 20 μm.

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