Housing comprising a semiconductor body and a method for producing a housing with a semiconductor body

Abstract

A method for producing a component having a semiconductor body includes providing the semiconductor body including a radiation passage surface and a rear side facing away from the radiation passage surface, wherein the semiconductor body comprises on the rear side a connection location for the electrical contacting of the semiconductor body, providing a composite carrier including a carrier layer and a partly cured connecting layer, applying the semiconductor body on the composite carrier, such that the connection location penetrates into the partly cured connecting layer, curing the connecting layer to form a solid composite, applying a molded body material on the composite carrier after curing the connecting layer, wherein the molded body covers side surfaces of the semiconductor body, forming a cutout through the carrier layer and the connecting layer in order to expose the connection location, and filling the cutout with an electrically conductive material.

What is claimed is: 
     
         1 . A method for producing a component comprising a semiconductor body, the method comprising:
 providing the semiconductor body comprising a radiation passage surface and a rear side facing away from the radiation passage surface, wherein the semiconductor body comprises on the rear side a connection location for the electrical contacting of the semiconductor body,   providing a composite carrier comprising a carrier layer and a partly cured connecting layer applied on the carrier layer,   applying the semiconductor body on the composite carrier, such that the connection location penetrates into the partly cured connecting layer,   curing the connecting layer in order to form a solid composite comprising the semiconductor body and the composite carrier,   applying a molded body material on the composite carrier in order to form a molded body after curing the connecting layer, wherein the molded body covers side surfaces of the semiconductor body,   forming a cutout through the carrier layer and the connecting layer in order to expose the connection location, and   filling the cutout with an electrically conductive material, such that the electrically conductive material is in electrical contact with the connection location and the carrier layer.   
     
     
         2 . The method as claimed in  claim 1 ,
 wherein the connecting layer is formed from a fiber-reinforced resin material and is clad over the whole area with the carrier layer formed as a metal foil.   
     
     
         3 . The method as claimed in  claim 1 ,
 wherein the carrier layer comprises a copper foil and the connecting layer comprises a glass-fiber-reinforced epoxy resin layer.   
     
     
         4 . The method as claimed in  claim 1 ,
 wherein the carrier layer comprises a copper layer and the connecting layer comprises formed by applying an adhesive on the carrier layer.   
     
     
         5 . The method as claimed in  claim 1 ,
 wherein the molded body material comprises a potting compound and the molded body is formed by a molding method, such that the molded body covers the side surfaces of the semiconductor body.   
     
     
         6 . The method as claimed in  claim 5 ,
 wherein the molded body is formed by film assisted molding, wherein the semiconductor body is surrounded by the molded body fully circumferentially in a lateral direction.   
     
     
         7 . The method as claimed in  claim 1 ,
 wherein the semiconductor body comprises on the rear side two electrical connection locations associated with different electrical polarities of the semiconductor body, wherein the forming the cutout through the carrier layer comprises two cutouts spaced apart laterally from one another are formed through the carrier layer and the connecting layer to expose the connection locations.   
     
     
         8 . The method as claimed in  claim 7 ,
 wherein the semiconductor body is electrically short-circuited directly after the cutouts have been filled, and wherein the method further comprises forming an intermediate trench between the filled cutouts such that the electrical short circuit is canceled by the intermediate trench.   
     
     
         9 . The method as claimed in  claim 1 ,
 further comprising filling the cutout with a material identical to the material of the carrier layer.   
     
     
         10 . The method as claimed in  claim 1 ,
 further comprising forming the connection location from copper or coating with copper, wherein the carrier layer is formed from copper and the cutout is filled with copper.   
     
     
         11 . The method as claimed in  claim 1 ,
 wherein the semiconductor body is provided as part of an unpackaged semiconductor chip comprising two electrical connection locations on the rear side and the component after completion comprises a housing for the semiconductor body, wherein the housing is formed from a continuous composite comprising the molded body, the carrier layer and the connecting layer.   
     
     
         12 . The method as claimed in  claim 1  for producing a plurality of such components, further comprising
 applying a plurality of semiconductor bodies on the composite carrier, wherein the connection locations of the semiconductor body penetrate into the partly cured connecting layer, 
 producing isolation trenches between the semiconductor bodies in a lateral direction and through the carrier layer in a vertical direction, 
 singulating the components along the isolation trenches, such that each component comprises one of the semiconductor bodies and a housing, wherein the housing is formed from a continuous composite comprising the molded body, the carrier layer and the connecting layer. 
 
     
     
         13 . A component comprising:
 a semiconductor body; and   a housing formed from a continuous composite comprising:   a molded body,   a composite carrier arranged substantially flush with the molded body, wherein the composite carrier comprises a carrier layer and a cured electrically insulating connecting layer;   an electrical connection location for an electrical contacting of the semiconductor body on a rear side of the semiconductor body facing the carrier layer;   wherein the electrical connection location is arranged in the electrically insulating connecting layer and is surrounded by the electrically insulating connecting layer fully circumferentially in lateral directions; and   an electrically conductive connection column bonded to the electrical connection location;   wherein the electrically conductive connection column extends entirely through the carrier layer and the electrically insulating connecting layer,   wherein the semiconductor body comprises a radiation passage surface on a side of the semiconductor body opposite to the rear side of the semiconductor body; wherein the radiation passage surface is free of the molded body and the molded body is at least partially in direct contact with the semiconductor body.   
     
     
         14 . The component as claimed in  claim 13 ,
 wherein the connection location is formed from copper or coated with copper and the carrier layer is formed from copper, wherein the electrical connection location and the carrier layer extend into the electrically insulating connecting layer in order to form an electrical contact.   
     
     
         15 . The component as claimed in  claim 13 ,
 wherein the semiconductor body comprises on the rear side two electrical connection locations, of which a first electrical connection location is electrically conductively connected to a first semiconductor layer of a first charge carrier type of the semiconductor body and a second electrical connection location is electrically conductively connected to a second semiconductor layer of a second charge carrier type of the semiconductor body, wherein the carrier layer is subdivided into two partial regions, which are spaced apart from one another laterally, overlap the connecting layer in plan view and are electrically connected in each case to one of the two connection locations.   
     
     
         16 . A component comprising:
 a semiconductor body,   a molded body,   a carrier layer, and   a cured electrically insulating connecting layer,   wherein the electrically insulating connecting layer comprises a glass-fiber-reinforced epoxy resin layer,   wherein the component comprises an electrical connection location for the electrical contacting of the semiconductor body on a rear side of the semiconductor body facing the carrier layer,   wherein the electrical connection location is arranged in the electrically insulating connecting layer arranged between the semiconductor body and the carrier layer and is surrounded by the electrically insulating connecting layer fully circumferentially in lateral directions, and wherein the molded body covers side surfaces of the semiconductor body, wherein in a plan view of the carrier layer the molded body surrounds the semiconductor body fully circumferentially and overlaps the electrically insulating connecting layer.