Semiconductor device

Abstract

A semiconductor device includes a substrate, an active region and an inactive region surrounding the active region, a gate electrode, a drain electrode and a source electrode on the active region, a drain interconnection including a drain finger and a drain bar, and a source interconnection including a source finger and a source bar. The source bar is located on an opposite side of the drain bar across the active region in a first direction. The source electrode includes a first side facing the drain bar in the first direction and a first depression in a middle of the first side. A first depth of the first depression in the first direction is equal or more than a first interval between the drain bar and the first side in the first direction.

1 - 14 . (canceled) 
     
     
         15 . A semiconductor device comprising:
 a semiconductor layer;   a first finger located on the semiconductor layer;   a second finger located on the semiconductor layer; and   a first bar connected to the second finger,   wherein a first side included in the first finger includes a first side portion facing the first bar and a second side portion facing the first bar, and   wherein, in a plan view, a first distance from the first side portion to the first bar is greater than a second distance from the second side portion to the first bar.   
     
     
         16 . The semiconductor device according to  claim 15 ,
 wherein, in a plan view, a third distance from the first side portion to the second side portion is equal to or greater than the second distance.   
     
     
         17 . The semiconductor device according to  claim 15 ,
 wherein the first side includes a pair of the second side portions and the first side portion located between the pair of the second side portions.   
     
     
         18 . The semiconductor device according to  claim 17 ,
 wherein the first side comprises a depression including the first side portion, the depression being located between the pair of the second side portions.   
     
     
         19 . The semiconductor device according to  claim 17 ,
 wherein the first side portion encompasses a middle of the first side.   
     
     
         20 . The semiconductor device according to  claim 15 ,
 wherein the first finger is a source finger, the second finger is a drain finger, and the first bar is a drain bar.   
     
     
         21 . The semiconductor device according to  claim 15 ,
 wherein the first finger is a source finger, the second finger is a gate finger, and the first bar is a gate bar.   
     
     
         22 . The semiconductor device according to  claim 16 , further comprising:
 a third finger located on the semiconductor layer; and   a second bar connected to the third finger,   wherein the first finger includes a second side located opposite to the first side through a center of the first finger, and   wherein, in a plan view, a fourth distance from the first side to the second bar is greater than the third distance.   
     
     
         23 . The semiconductor device according to  claim 22 ,
 wherein the first finger includes an opening overlapping with the second bar, and   wherein the second side forms a part of an inner wall of the opening.   
     
     
         24 . A semiconductor device comprising:
 a semiconductor layer;   a source finger located on the semiconductor layer;   a drain finger located on the semiconductor layer; and   a drain bar connected to the drain finger,   wherein the source finger includes a first side facing the drain bar and a second side facing the drain bar, and   wherein, in a plan view, a first distance from the first side to the drain bar is greater than a second distance from the second side to the drain bar.   
     
     
         25 . The semiconductor device according to  claim 24 ,
 wherein the source finger includes a pair of the second sides and the first side located between the pair of the second sides.   
     
     
         26 . The semiconductor device according to  claim 25 ,
 wherein the source finger comprises a depression including the first side, the depression being located between the pair of the second sides.   
     
     
         27 . The semiconductor device according to  claim 25 , further comprising:
 a gate finger located on the semiconductor layer; and   a gate bar connected to the gate finger,   wherein the source finger includes a third side located opposite to the first side through a center of the source finger, and   wherein, in a plan view, a third distance from the first side to the gate bar is greater than a fourth distance from the first side to the second side.   
     
     
         28 . The semiconductor device according to  claim 27 ,
 wherein the source finger includes an opening overlapping with the gate bar, and   wherein the third side forms a part of an inner wall of the opening.   
     
     
         29 . A semiconductor device comprising:
 a semiconductor layer;   a finger located on the semiconductor layer;   another finger located on the semiconductor layer; and   a bar connected to the another finger,   wherein the finger includes a first side facing the bar and a second side facing the bar, and   wherein, in a plan view, a first distance from the first side to the bar is greater than a second distance from the second side to the bar.   
     
     
         30 . The semiconductor device according to  claim 29 ,
 wherein the finger includes a pair of the second sides and the first side located between the pair of the second sides.   
     
     
         31 . The semiconductor device according to  claim 30 ,
 wherein the finger comprises a depression including the first side, the depression being located between the pair of the second sides.