Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination

Abstract

The present disclosure relates to a semiconductor processing apparatus having a reaction chamber which can include a baseplate having an opening; a moveable substrate support configured to support a substrate; a movement element configured to move a substrate held on the substrate support towards the opening of the baseplate; a plurality of gas inlets positioned above and configured to direct gas downwardly towards the substrate support; and a sealing element configured to form a seal between the baseplate and the substrate support, the seal positioned at a greater radial distance from a center of the substrate support than an outer edge of the substrate support. In some embodiments, the sealing element can also include a plurality of apertures extend through the sealing element, the apertures configured to provide a flow path between a position below the sealing element to a position above the sealing element. Some embodiments include two or more stacked sealing elements.

What is claimed is: 
     
         1 . A semiconductor processing apparatus comprising:
 a reaction chamber comprising a baseplate including an opening, wherein the baseplate comprises a surface having an apex;   a moveable substrate support configured to support a substrate and configured to move towards the opening of the baseplate; and   two or more stacked metal sealing rings extending around the substrate support, at least one of the metal sealing rings extending around the substrate support and configured to form a seal between the baseplate and the substrate support, wherein the seal is formed between the apex of the baseplate and the at least one sealing ring.   
     
     
         2 . The apparatus of  claim 1 , wherein the two or more stacked metal sealing rings comprises a plurality of apertures extending therethrough, wherein the apertures are configured to provide a flow path between a position below the two or more stacked metal sealing rings to a position above the two or more stacked metal sealing rings. 
     
     
         3 . The apparatus of  claim 1 , wherein the seal is formed without a substantial vertical gap between the substrate support and the baseplate. 
     
     
         4 . The apparatus of  claim 1 , further comprising an exhaust port, wherein at least one of the apertures and the seal is positioned at a radial distance that is less than or equal to the exhaust port, relative to a center of the substrate support. 
     
     
         5 . The apparatus of  claim 4 , further comprising a gap extending radially between the substrate support and the baseplate, wherein the apertures are arranged at a greater radial distance from the center of the substrate support than the gap. 
     
     
         6 . The apparatus of  claim 5 , wherein the seal is formed without a substantial vertical gap between the substrate support and the baseplate. 
     
     
         7 . The apparatus of  claim 1 , further comprising a plurality of gas inlets positioned above and configured to direct gas downwardly towards the substrate portion. 
     
     
         8 . The apparatus of  claim 7 , wherein each of the plurality of gas inlets is located radially inward of the seal. 
     
     
         9 . The apparatus of  claim 1 , wherein the substrate support comprises an upper portion and a lower portion, wherein the at least one sealing ring is affixed to an underside of the upper portion of the substrate support. 
     
     
         10 . The apparatus of  claim 1 , wherein the surface comprises a curved surface, and the total circumference where the curved surface contacts the at least one Z sealing ring is greater than the total circumference of the apertures. 
     
     
         11 . The apparatus of  claim 1 , wherein the baseplate does not include bellows. 
     
     
         12 . The apparatus of  claim 1 , wherein a first metal sealing ring forms a first contact seal with the baseplate, and a second metal sealing ring forms a second contact seal with the substrate support. 
     
     
         13 . The apparatus of  claim 1 , wherein the is seal is disposed at a first radial distance from a center of the substrate support that is at least 30% greater than a second radial distance from the center of the substrate to an outer edge of a recess of the substrate support. 
     
     
         14 . A semiconductor processing apparatus comprising:
 a reaction chamber comprising a baseplate;   a moveable substrate support configured to support a substrate; and   two or more stacked metal sealing rings extending around the substrate support, at least one of the metal sealing rings configured to form a seal between a curved surface of the baseplate and the substrate support;   wherein a plurality of apertures extend through the sealing rings, the apertures configured to provide a flow path between a position below the sealing rings to a position above the sealing rings.   
     
     
         15 . The semiconductor processing apparatus of  claim 14 , wherein the two or more metal sealing rings comprises three or more sealing rings. 
     
     
         16 . The semiconductor processing apparatus of  claim 14 , wherein the two or more sealing rings are substantially aligned with respect to each other. 
     
     
         17 . The semiconductor processing apparatus of  claim 14 , wherein each of the sealing rings directly contacts an adjacent corresponding sealing ring. 
     
     
         18 . The semiconductor processing apparatus of  claim 14 , wherein a portion of a first sealing ring of the two or more sealing rings forms a first contact seal with the baseplate, and a portion of a second sealing ring of the two or more sealing rings forms a second contact seal with the substrate support. 
     
     
         19 . The semiconductor processing apparatus of  claim 18 , wherein the two or more sealing rings are attached to at least one of the baseplate and the substrate support with a floating attachment. 
     
     
         20 . The semiconductor processing apparatus of  claim 19 , wherein the two or more sealing rings are attached to both the baseplate and the substrate support with a floating attachment. 
     
     
         21 . The semiconductor processing apparatus of  claim 18 , wherein the first contact seal is disposed radially outward of a second contact seal. 
     
     
         22 . The semiconductor processing apparatus of  claim 21 , wherein the first contact seal is an upward facing seal, and the second contact seal is a downward facing seal. 
     
     
         23 . The semiconductor processing apparatus of  claim 14 , wherein the two or more sealing rings are configured to seal at a pressure differential between about 15 Torr or less. 
     
     
         24 . The semiconductor processing apparatus of  claim 23 , further comprising a plurality of apertures extending through the at least one sealing ring. 
     
     
         25 . The semiconductor processing apparatus of  claim 24 , further comprising an exhaust port, wherein at least one of the apertures and the seal is positioned at a radial distance that is less than or equal to the exhaust port, relative to a center of the substrate support. 
     
     
         26 . The semiconductor processing apparatus of  claim 14 , wherein each of the stacked sealing rings comprises a flexible diaphragm comprising at least one of an austenitic nickel-chromium-molybdenum-tungsten alloy, a nickel-chromium-cobalt alloy comprising more than 50% nickel and 20% chromium, or Grade 2 titanium. 
     
     
         27 . The semiconductor processing apparatus of  claim 14 , wherein each of the stacked sealing rings is about 0.4 mm to about 3 mm thick. 
     
     
         28 . The apparatus of  claim 14 , wherein at least one of the two or more stacked sealing rings is pneumatically actuated. 
     
     
         29 . The apparatus of  claim 17 , further comprising a contact ring, wherein the floating attachment is provided by the contact ring.