Thin film structure and electronic device including the same

Abstract

Disclosed herein is a thin film structure, including a first conductive layer on a dielectric layer including a plurality of layers. Each of the plurality of layers includes a dopant layer containing a dopant A and a HfO 2 layer to form a compound of Hf x A 1-x O z (0<x<1, z is a real number). An uppermost layer of the plurality of layers is thickest among the plurality of layers. The first conductive layer contacts the uppermost layer.

What is claimed is: 
     
         1 . A thin film structure, comprising:
 a dielectric layer including a plurality of layers, each of the plurality of layers including a dopant layer containing a dopant A and a HfO 2  layer to form a compound of Hf x A 1-x O z  (0<x<1, z is a real number), an uppermost layer of the plurality of layers being thickest among the plurality of layers; and   a first conductive layer on the dielectric layer, the first conductive layer contacting the uppermost layer of the plurality of layers in the dielectric layer.   
     
     
         2 . The thin film structure of  claim 1 , wherein
 the uppermost layer has a thickness of 0.25 nm or more.   
     
     
         3 . The thin film structure of  claim 1 , wherein
 the dielectric layer includes a first layer among the plurality of layers,   the first layer has a thickness of i*t, where i is an integer and t is a real number,   the first layers includes HfO 2 , and   the uppermost layer contains the dopant A and has a thickness of j*t, where j is an integer of 3 or more and j≥i.   
     
     
         4 . The thin film structure of  claim 3 , wherein
 the dielectric layer further includes a second layer and a third layer among the plurality of layers,   the second layer is on the first layer,   the second layer has a thickness of j*t and contains the dopant A,   the third layer is on the second layer,   the third layer has a thickness of i*t and includes HfO 2 , and   j>i is satisfied.   
     
     
         5 . The thin film structure of  claim 4 , wherein
 pairs of the second layer and the third layer repeatedly stacked on each other several times in the dielectric layer between the first layer and the uppermost layer.   
     
     
         6 . The thin film structure of  claim 3 , wherein
 the dielectric layer further includes a second layer and a third layer among the plurality of layers,   the second layer is on the first layer,   the second layer has a thickness of m*t (i<m<j, m is an integer) and contains a dopant A,   the third layer is on the second layer,   the third layer has a thickness of n*t (i<n<j, n is an integer),   the third layer includes HfO 2 , and   j>i is satisfied.   
     
     
         7 . The thin film structure of  claim 6 , wherein,
 in the dielectric layer,   pairs of the first layer and the second layer are repeatedly disposed under the third layer.   
     
     
         8 . The thin film structure of  claim 3 , wherein,
 the dielectric layer further includes a second layer and a third layer among the plurality of layers,   the second layer is on the first layer,   the second layer has a thickness of i*t,   the second layer contains a dopant A,   the third layer is on the second layer,   the third layer has a thickness of j*t, and   the third layer includes HfO 2 .   
     
     
         9 . The thin film structure of  claim 8 , wherein
 pairs of the first layer and the second layer are repeatedly disposed in the dielectric layer under the third layer.   
     
     
         10 . The thin film structure of  claim 3 , wherein
 the dielectric layer further includes a second layer and a third layer among the plurality of layers,   the second layer is on the first layer,   the second layer has a thickness of k*t (k<i, k is an integer),   the second layer contains a dopant A,   the third layer is on the second layer,   the third layer has a thickness of k*t,   the third layer includes HfO 2 , and   i=j is satisfied.   
     
     
         11 . The thin film structure of  claim 10 , wherein
 pairs of the second layer and the third layer are repeatedly disposed in the dielectric layer between the first layer and the uppermost layer.   
     
     
         12 . The thin film structure of  claim 1 , wherein
 the dielectric layer includes a first layer among the plurality of layers,   the first layer contains a dopant A,   the first layer has a thickness of i*t (i is an integer, and t is a real number),   the first layer includes HfO 2 ,   the uppermost layer has a thickness of j*t (j>i, j is an integer of 3 or more), and   the uppermost layer includes HfO 2 .   
     
     
         13 . The thin film structure of  claim 12 , wherein
 the dielectric layer further includes a second layer and a third layer among the plurality of layers,   the second layer is on the first layer,   the second layer has a thickness of j*t,   the second layer includes HfO 2 ,   the third layer is on the second layer,   the third layer has a thickness of i*t, and   the third layer contains a dopant A.   
     
     
         14 . The thin film structure of  claim 13 , wherein
 pairs of the second layer and the third layer are repeatedly disposed between the first layer and the uppermost layer.   
     
     
         15 . The thin film structure of  claim 1 , wherein
 the dielectric layer includes a first layer and second layer among the plurality of layers,   the first layer having a thickness of i*t (i is an integer, and t is a real number),   the first layer includes HfO 2 ,   the second layer is on the first layer,   the second layer contains a dopant A,   the second layer has a thickness of j*t (j>i),   the uppermost layer has a thickness of k*t (k>i, j), and   the uppermost layer includes HfO 2 .   
     
     
         16 . The thin film structure of  claim 1 , wherein
 the dielectric layer includes a first layer and a second layer among the plurality of layers,   the first layer contains a dopant A,   the first layer has a thickness of j*t (j is an integer, and t is a real number),   the second layer has a thickness of i*t (l>j),   the second layer includes HfO 2 ,   the uppermost layer has a thickness of n*t (n>i, j), and   the uppermost layer includes a dopant A.   
     
     
         17 . The thin film structure of  claim 1 , wherein
 t is 0.05 nm or more.   
     
     
         18 . The thin film structure of  claim 1 , wherein
 the dielectric layer has a thickness of about 0.5 nm to about 20 nm.   
     
     
         19 . The thin film structure of  claim 1 , wherein
 A includes any one of Zr, La, Y, Si, Al, and Sn.   
     
     
         20 . The thin film structure of  claim 1 , wherein
 the first conductive layer includes any one of a metal, a conductive oxide, and graphene.   
     
     
         21 . The thin film structure of  claim 17 , wherein t is about 0.1 nm to about 0.9 nm. 
     
     
         22 . The thin film structure of  claim 1 , wherein the uppermost layer is HfO 2 . 
     
     
         23 . The thin film structure of  claim 1 , wherein the uppermost layer is ZrO 2 . 
     
     
         24 . The thin film structure of  claim 1 , wherein
 z is 2,   x is a range of 0.2 to 0.8.   
     
     
         25 . The thin film structure of  claim 1 , wherein
 a material of a lowermost layer among the plurality of layers is different than a material of the uppermost layer.   
     
     
         26 . An electronic device, comprising:
 a semiconductor layer; and   the thin film structure of  claim 1  on the semiconductor layer.   
     
     
         27 . The electronic device of  claim 26 , further comprising:
 an insulating layer between the semiconductor layer and the thin film structure.   
     
     
         28 . The electronic device of  claim 27 , further comprising:
 a second conductive layer between the insulating layer and the thin film structure.   
     
     
         29 . An electronic device, comprising:
 a second conductive layer; and   the thin film structure of  claim 1  on the second conductive layer.   
     
     
         30 . The electronic device of  claim 29 , further comprising:
 an insulating layer between the second conductive layer and the thin film structure.   
     
     
         31 . A method of manufacturing a thin film structure, comprising:
 providing a substrate;   forming a dielectric layer including a compound of Hf a A b O z  (where a, b, z are real numbers) on the substrate, the dielectric layer including a plurality of layers, each of the plurality of layers including a dopant layer containing a dopant A and a HfO 2  layer, an uppermost layer of the plurality of layers being thickest among the plurality of layers; and   forming a conductive layer on the dielectric layer, the conductive layer contacting the uppermost layer.   
     
     
         32 . The method of  claim 31 , further comprising:
 setting a kind and the thickness of the uppermost layer depending on a content ratio of Hf and A in the dielectric layer.   
     
     
         33 . The method of  claim 31 , wherein,
 a content ratio of the Hf and A in the dielectric layer is a:b,   the forming the dielectric layer includes forming the uppermost layer is as an A-dopant layer in response to a case of a≤b, and   the forming dielectric layer includes forming the uppermost layer as a HfO 2  layer in response to a case of a>b.   
     
     
         34 . The method of  claim 31 , further comprising:
 performing a heat treatment, wherein   the heat treatment is performed before the forming the conductive layer and after the forming the dielectric layer, or   the heat treatment is performed after forming the conductive layer.