Semiconductor element and display device using the same

Abstract

A display device including a semiconductor element is provided. The semiconductor element includes: a semiconductor having an active layer; a gate insulating film which is in contact with the semiconductor, a gate electrode opposite to the active layer through the gate insulating film; a first nitride insulating film formed over the active layer; a photosensitive organic resin film formed on the first nitride insulating film; a second nitride insulating film formed on the photosensitive organic resin film; and a wiring provided on the second nitride insulating film, in which a first opening portion is provided in the photosensitive organic resin film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion.

1 . (canceled) 
     
     
         2 . A light-emitting device comprising:
 a semiconductor layer over a substrate, the semiconductor layer comprising a channel formation region;   a gate insulating layer over the semiconductor layer, the gate insulating layer comprising silicon oxide;   a gate electrode over the gate insulating layer;   a first insulating film over the semiconductor layer, the first insulating film comprising silicon nitride;   a second insulating film over the first insulating film, the second insulating film comprising an inorganic insulating film;   a wiring over the second insulating film, the wiring comprising a titanium film and an aluminum film;   a third insulating film over the wiring, the third insulating film comprising silicon;   a fourth insulating film over the third insulating film, the fourth insulating film comprising an organic resin;   a pixel electrode over the fourth insulating film;   a fifth insulating film covering an end portion of the pixel electrode, the fifth insulating film comprising an organic resin; and   an EL layer over the pixel electrode,   wherein the wiring is in contact with the semiconductor layer through a first opening in the gate insulating layer, the first insulating film, and the second insulating film,   wherein the pixel electrode is in contact with the wiring through a second opening in the third insulating film and the fourth insulating film, and   wherein the first opening and the second opening overlap with each other.   
     
     
         3 . The light-emitting device according to  claim 2 , wherein the pixel electrode comprises indium tin oxide. 
     
     
         4 . The light-emitting device according to  claim 2 , wherein the fifth insulating film has a curved shape. 
     
     
         5 . A light-emitting device comprising:
 a semiconductor layer over a substrate, the semiconductor layer comprising a channel formation region;   a gate insulating layer over the semiconductor layer, the gate insulating layer comprising silicon oxide;   a gate electrode over the gate insulating layer;   a first insulating film over the semiconductor layer, the first insulating film comprising silicon nitride;   a second insulating film over the first insulating film, the second insulating film comprising an inorganic insulating film;   a wiring over the second insulating film, the wiring comprising a titanium film and an aluminum film;   a third insulating film over the wiring, the third insulating film comprising an organic resin;   a pixel electrode over the third insulating film;   a fourth insulating film covering an end portion of the pixel electrode, the fourth insulating film comprising an organic resin; and   an EL layer over the pixel electrode,   wherein the wiring is in contact with the semiconductor layer through a first opening in the gate insulating layer, the first insulating film, and the second insulating film, and   wherein the pixel electrode is in contact with the wiring through a second opening in the third insulating film.   
     
     
         6 . The light-emitting device according to  claim 5 , wherein the pixel electrode comprises indium tin oxide. 
     
     
         7 . The light-emitting device according to  claim 5 , wherein the fourth insulating film has a curved shape.