Cleaning apparatus, chemical mechanical polishing system including the same, cleaning method after chemical mechanical polishing, and method of manufacturing semiconductor device including the same

Abstract

A cleaning method includes supplying, to a substrate by a dual nozzle, a first chemical liquid and a first spray, the first spray including a first liquid dissolving the first chemical liquid, and moving the dual nozzle in a first direction. The the dual nozzle comprises a first nozzle and a second nozzle, the first nozzle supplies the first spray to the substrate and the second nozzle supplies the first chemical liquid to the substrate while the dual nozzle moves in the first direction, the first nozzle proceeds ahead of the second nozzle in the first direction while the dual nozzle moves in the first direction, and the first nozzle has a distance 3 cm to 7 cm from the second nozzle.

What is claimed is: 
     
         1 . A cleaning method, comprising:
 supplying, to a substrate by a dual nozzle, a first chemical liquid and a first spray, the first spray including a first liquid dissolving the first chemical liquid; and   moving the dual nozzle in a first direction,   wherein the dual nozzle comprises a first nozzle and a second nozzle,   wherein the first nozzle supplies the first spray to the substrate and the second nozzle supplies the first chemical liquid to the substrate while the dual nozzle moves in the first direction,   wherein the first nozzle proceeds ahead of the second nozzle in the first direction while the dual nozzle moves in the first direction, and   wherein the first nozzle has a distance 3 cm to 7 cm from the second nozzle.   
     
     
         2 . The cleaning method of  claim 1 , wherein the first chemical liquid includes an acidic solution. 
     
     
         3 . The cleaning method of  claim 1 , wherein the first chemical liquid includes hydrofluoric acid. 
     
     
         4 . The cleaning method of  claim 3 , wherein the hydrofluoric acid has a weight percentage of 0.01 wt % to 2 wt % in relation to the first chemical liquid. 
     
     
         5 . The cleaning method of  claim 1 , wherein the first direction is a circular movement direction. 
     
     
         6 . The cleaning method of  claim 1 , wherein the first direction is a tangential direction of movement of the dual nozzle. 
     
     
         7 . The cleaning method of  claim 1 , further comprising brushing a surface of the substrate and supplying a second chemical liquid onto the substrate while the brushing of the surface of the substrate is performed. 
     
     
         8 . The cleaning method of  claim 1 , wherein inside pressure of the second nozzle is between 0.8 atm and 1.2 atm. 
     
     
         9 . The cleaning method of  claim 1 , wherein inside pressure of the first nozzle is between 2 atm and 10 atm. 
     
     
         10 . The cleaning method of  claim 1 , wherein the first chemical liquid includes ammonia water,
 wherein the ammonia water has ammonia (NH 4 OH) in the ammonia water with a weight percentage of 0.01 wt % to 4 wt % of the ammonia water.   
     
     
         11 . The method of  claim 1 , wherein the second nozzle traces the first nozzle while the dual nozzle moves in the first direction. 
     
     
         12 . The method of  claim 1 , wherein both of the first nozzle and the second nozzle are elongated, and the elongated directions of both of the first nd second nozzles are perpendicular to the substrate. 
     
     
         13 . The method of  claim 1 , wherein the first spray proceeds ahead of the first chemical liquid in the first direction to remove a first particle on the substrate, and the first chemical liquid follows behind the first spray to remove a second particle smaller than the first particle on the substrate. 
     
     
         14 . A cleaning method, comprising:
 supplying, to a substrate by a dual nozzle, a first chemical liquid and a first spray, the first spray including a first liquid dissolving the first chemical liquid; and   moving the dual nozzle in a first direction,   wherein the first spray proceeds ahead of the first chemical liquid while the first spray and the first chemical liquid are supplied to the substrate,   wherein the first spray is supplied at a higher pressure than the first chemical liquid and the first direction is a direction from a center of the substrate toward a periphery of the substrate,   wherein the dual nozzle includes a first nozzle supplying the first spray and a second nozzle supplying the first chemical liquid, and   wherein the first nozzle has a distance 3 cm to 7 cm from the second nozzle.   
     
     
         15 . A cleaning method, comprising:
 supplying a first chemical liquid and a first spray including a first liquid dissolving the first chemical liquid on a substrate using a first cleaning unit,   wherein the first cleaning unit comprises:   a chuck configured to receive the substrate;   a shaft disposed adjacent to the chuck;   an arm disposed above the chuck and connected to the shaft; and   a first dual nozzle connected to an end of the arm opposite of the shaft, the first dual nozzle moved by a rotation of the shaft in a first direction;   wherein the first dual nozzle comprises:   a first nozzle; and   a second nozzle connected to the first nozzle in the first direction,   wherein the second nozzle is separated by a distance of 3 cm to 7 cm from the first nozzle,   wherein the first nozzle supplies the first spray to the substrate and the second nozzle supplies the first chemical liquid to the substrate while the first dual nozzle moves in the first direction, and   wherein the first nozzle proceeds ahead of the second nozzle in the first direction while the first dual nozzle moves in the first direction.   
     
     
         16 . The cleaning method of  claim 15 , wherein the first direction is a circular movement direction. 
     
     
         17 . The cleaning method of  claim 15 , further comprising: brushing the substrate using a brush and a second chemical liquid provided by a third nozzle. 
     
     
         18 . The cleaning method of  claim 17 , wherein the first chemical liquid includes an acidic solution, and the second chemical liquid includes an alkaline solution. 
     
     
         19 . The cleaning method of  claim 17 , wherein the first chemical liquid includes hydrofluoric acid, and the second chemical liquid includes an ammonia water. 
     
     
         20 . The cleaning method of  claim 19 , wherein the hydrofluoric acid has a weight percentage of 0.01 wt % to 2 wt % in relation to the first chemical liquid.