Single photon generation through mechanical deformation

Abstract

The present disclosure generally relates to single photon emission from an indirect band gap two-dimensional (2D) material through deterministic strain induced localization. At least some aspects of the present disclosure relate to techniques for deterministically creating spatially localized defect single photon emission sites in the 750 nm to 800 nm regime using a tungsten diselenide (WSe2) film and ultra-sharp SiO2 tips.

What is claimed is: 
     
         1 . A method for modifying an indirect band gap two-dimensional (2D) film so that it is capable of single photon emission, comprising:
 providing a 2D film comprising at least one indirect band gap material, the 2D film having between 1 and 15 layers; and   transferring the 2D film to a substrate comprising at least a first tip having a radius of about 4 nm, the transferring rendering the 2D film into a three-dimensional (3D) film capable of single photon emission.   
     
     
         2 . The method of  claim 1 , further comprising:
 producing the substrate to have an array of tips each having a radius of about 4 nm; and   transferring the 2D film to the substrate having the array of tips.   
     
     
         3 . The method of  claim 2 , further comprising producing the substrate to have the array of tips with a distance of about 0.25 μm to about 100 μm between each adjacent tip. 
     
     
         4 . The method of  claim 1 , wherein transferring the 2D film to the substrate comprises transferring the 2D film to the substrate comprising a dielectric material. 
     
     
         5 . The method of  claim 4 , wherein transferring the 2D film to the substrate comprising the dielectric material comprises transferring the 2D film to the substrate comprising silicon dioxide (SiO 2 ). 
     
     
         6 . The method of  claim 1 , wherein transferring the 2D film to the substrate comprising the least first tip comprises transferring the 2D film to the substrate comprising the least first tip having a base dimension that is double a height dimension of the at least first tip. 
     
     
         7 . The method of  claim 1 , further comprising:
 producing a 2D coating material/2D film construct; and   transferring the 2D coating material/2D film construct to the substrate.   
     
     
         8 . The method of  claim 7 , wherein producing the 2D coating material/2D film construct comprises spin-coating the 2D film with a coating material. 
     
     
         9 . The method of  claim 7 , wherein transferring the 2D coating material/2D film construct to the substrate comprises positioning the 2D coating material between the 2D film and the substrate. 
     
     
         10 . The method of  claim 1 , further comprising, after transferring the 2D film, thermally annealing the 2D film and the substrate to produce a film/substrate construct comprising the 3D film. 
     
     
         11 . A single photon emitting three-dimensional (3D) film, comprising:
 a two-dimensional (2D) planar portion; and   a 3D portion in the 2D planar portion,   wherein the 2D planar portion and the 3D portion comprise at least one indirect band gap material,   wherein the 2D planar portion is incapable of single photon emission,   wherein the 3D portion is capable of single photon emission.   
     
     
         12 . The single photon emitting 3D film of  claim 11 , wherein the at least one indirect band gap material comprises tungsten diselenide (WSe 2 ). 
     
     
         13 . The single photon emitting 3D film of  claim 11 , wherein the 3D portion has a radius of about 4 nm. 
     
     
         14 . The single photon emitting 3D film of  claim 11 , wherein the 3D portion has a base dimension that is double a height dimension of the 3D portion. 
     
     
         15 . The single photon emitting 3D film of  claim 14 , wherein:
 the base dimension is about 0.1 μm to about 20 μm; and   the height dimension is about 0.05 μm to about 5 μm.   
     
     
         16 . A single photon emitting sensor component, comprising:
 a three-dimensional (3D) film comprising a two-dimensional (2D) planar portion and a 3D portion, the 2D planar portion and the 3D portion comprising at least one indirect band gap material, the 2D planar portion being incapable of single photon emission, the 3D portion being capable of single photon emission.   
     
     
         17 . The single photon emitting sensor component of  claim 16 , wherein the at least one indirect band gap material comprises tungsten diselenide (WSe 2 ). 
     
     
         18 . The single photon emitting sensor component of  claim 16 , wherein the 3D portion has a radius of about 4 nm. 
     
     
         19 . The single photon emitting sensor component of  claim 16 , wherein the 3D portion has a base dimension that is double a height dimension of the 3D portion. 
     
     
         20 . The single photon emitting sensor component of  claim 19 , wherein:
 the base dimension is about 0.1 μm to about 20 μm; and   the height dimension is about 0.05 μm to about 5 μm.