Photoelectric conversion element, imaging device, and electronic apparatus

Abstract

A photoelectric conversion element includes a first electrode and a second electrode that are oppositely disposed and a photoelectric conversion layer that is provided between the first electrode and the second electrode, and includes a high-molecular semiconductor material and a low-molecular material. The high-molecular semiconductor material has an absorption coefficient in a visible light region of 50000 cm −1 or less. The low-molecular material includes an absorption peak in a wavelength range corresponding to one color in the visible light region.

1 . A photoelectric conversion element, comprising:
 a first electrode;   a second electrode;   a photoelectric conversion layer between the first electrode and the second electrode, wherein the photoelectric conversion layer comprises:
 a first semiconductor material that has a molecular weight of 3000 or more and has an absorption coefficient in a visible light region of 50000 cm −1  or less; and 
 a second semiconductor material that has a molecular weight of less than 3000 and comprises an absorption peak in a first wavelength range corresponding to one color in the visible light region. 
   
     
     
         2 . The photoelectric conversion element according to  claim 1 , wherein the first semiconductor material is a p-type semiconductor and the second semiconductor material is an n-type semiconductor. 
     
     
         3 . The photoelectric conversion element according to  claim 1 , wherein the first semiconductor material is an n-type semiconductor and the second semiconductor material is a p-type semiconductor. 
     
     
         4 . The photoelectric conversion element according to  claim 1 , wherein the second semiconductor material has an absorption coefficient of 50000 cm −1  or more in one of a second wavelength range of 450 nm or more and less than 500 nm, a third wavelength range of 500 nm or more and less than 600 nm, or a fourth wavelength range of 600 nm or more and less than 750 nm. 
     
     
         5 . The photoelectric conversion element according to  claim 1 , wherein the visible light region corresponds to a second wavelength range of 450 nm or more and 750 nm or less. 
     
     
         6 . The photoelectric conversion element according to  claim 5 , wherein the first semiconductor material has the absorption coefficient of 50000 cm −1  or less in the visible light region. 
     
     
         7 . The photoelectric conversion element according to  claim 1 , wherein the photoelectric conversion layer has a thickness of 50 nm to 500 nm. 
     
     
         8 . The photoelectric conversion element according to  claim 1 , wherein the first semiconductor material is represented by one of general formula (1) or (2) 
       
         
           
           
               
               
           
         
       
     
     
         9 . The photoelectric conversion element according to  claim 8 , wherein the first semiconductor material is represented by general formula (1-1) 
       
         
           
           
               
               
           
         
       
     
     
         10 . The photoelectric conversion element according to  claim 8 , wherein the first semiconductor material is represented by one of general formula (2-1) or (2-2) 
       
         
           
           
               
               
           
         
       
     
     
         11 . The photoelectric conversion element according to  claim 1 , wherein the first semiconductor material is represented by one of general formula (3-1), (3-2), or (3-3) 
       
         
           
           
               
               
           
         
       
     
     
         12 . The photoelectric conversion element according to  claim 1 , wherein the first semiconductor material is represented by general formula (4) 
       
         
           
           
               
               
           
         
       
     
     
         13 . The photoelectric conversion element according to  claim 12 , wherein the first semiconductor material is represented by general formula (4-1) 
       
         
           
           
               
               
           
         
       
     
     
         14 . The photoelectric conversion element according to  claim 1 , wherein
 the second semiconductor material comprises the absorption peak in one of a second wavelength range of 450 nm or more and less than 500 nm, a third wavelength range of 500 nm or more and less than 600 nm, or a fourth wavelength range of 600 nm or more and less than 750 nm, and   the second semiconductor material comprises an absorption coefficient equal to 50000 cm −1  or more at the absorption peak.   
     
     
         15 . The photoelectric conversion element according to  claim 1 , wherein the second semiconductor material is represented by one of general formula (5) or (6) 
       
         
           
           
               
               
           
         
       
     
     
         16 . The photoelectric conversion element according to  claim 15 , wherein the second semiconductor material is represented by one of general formula (5-1) or (5-2) 
       
         
           
           
               
               
           
         
       
     
     
         17 . The photoelectric conversion element according to  claim 15 , wherein the second semiconductor material is represented by one of general formula (6-1) or (6-2) 
       
         
           
           
               
               
           
         
       
     
     
         18 . The photoelectric conversion element according to  claim 1 , wherein the second semiconductor material is represented by one of general formula (7-1), (7-2), or (7-3) 
       
         
           
           
               
               
           
         
       
     
     
         19 . The photoelectric conversion element according to  claim 1 , wherein the second semiconductor material is represented by one of general formula (8-1) or (8-2) 
       
         
           
           
               
               
           
         
       
     
     
         20 . The photoelectric conversion element according to  claim 1 , wherein the second semiconductor material is represented by one of general formula (9-1) or (9-2)