Solid-state imaging device, production method, and electronic apparatus

Abstract

The present technology relates to a solid-state imaging device, a production method, and an electronic apparatus that can prevent sensitivity unevenness from generating. The solid-state imaging device includes a pixel array unit having a plurality of pixels, a microlens formed by laminating a plurality of lens layers for the every pixel, and a film formed between the lens layers with a uniform film thickness having a refractive index lower than a refractive index of the lens layer. The present technology is applicable to an amplification type solid-state imaging device such as a surface irradiation type or rear irradiation type CMOS image sensor, and a charge transfer type solid-state imaging device such as a CCD image sensor.

What is claimed is: 
     
         1 - 9 . (canceled) 
     
     
         10 . A solid-state imaging device imaging device, comprising:
 a plurality of pixels, each pixel including:   a photoelectric conversion unit;   a microlens including a plurality of lens layers; and   a first film formed between a first lens layer of the plurality of lens layers and a second lens layer of the plurality of lens layers;   wherein the first film and each of the plurality of lens layers is a contiguous and unitary layer that spans across all of the plurality of pixels,   wherein light incident to the photoelectric conversion unit passes through the plurality of lens layers and the first film, and   wherein the first film has a lower refractive index than the plurality of lens layers.   
     
     
         11 . The solid-state imaging device according to  claim 10 , further comprising:
 a second film formed between the second lens layer and a third lens layer in the plurality of lens layers, wherein the first film is an oxide film.   
     
     
         12 . The solid-state imaging device according to  claim 10 , wherein the first lens layer is closer to the photoelectric conversion unit than the second lens layer. 
     
     
         13 . The solid-state imaging device according to  claim 11 , wherein the plurality of lens layers are formed of an inorganic material, and wherein the second film is a contiguous and unitary layer that spans across all of the plurality of pixels, and wherein the second film has a lower refractive index than the plurality of lens layers. 
     
     
         14 . The solid-state imaging device according to  claim 13 , wherein the plurality of lens layer are formed of SiN. 
     
     
         15 . The solid-state imaging device according to  claim 13 , wherein the first lens layer is formed of SiN, and the second lens layer is formed of SiON. 
     
     
         16 . The solid-state imaging device according to  claim 10 , wherein the first lens layer is formed of an inorganic material, and the second lens layer is formed of an organic material. 
     
     
         17 . A method of producing a solid-state imaging device including a plurality of pixels, comprising:
 forming a first lens layer on a substrate that includes a photoelectric conversion unit;   forming a first film on the first lens; and   forming a second lens layer on the first film;   wherein each of the first film and each of the first and second lens layers is a contiguous and unitary layer that spans across all of the plurality of pixels,   wherein light incident to the photoelectric conversion unit passes through the first and second lens layers and the first film, and   wherein the first film has a lower refractive index than the plurality of lens layers.   
     
     
         18 . An electronic apparatus, comprising:
 a driving circuit; and   a solid-state imaging device including:
 a plurality of pixels, each pixel including:
 a photoelectric conversion unit; 
 a microlens including a plurality of lens layers; and 
 a first film formed between a first lens layer of the plurality of lens layers and a second lens layer of the plurality of lens layers; 
 wherein the first film and each of the plurality of lens layers is a contiguous and unitary layer that spans across all of the plurality of pixels, 
 wherein light incident to the photoelectric conversion unit passes through the plurality of lens layers and the first film, and 
 wherein the first film has a lower refractive index than the plurality of lens layers. 
 
   
     
     
         19 . The solid-state imaging device according to  claim 10 , wherein the first film has a uniform film thickness. 
     
     
         20 . The solid-state imaging device according to  claim 11 , wherein the first film and the second film have a same uniform film thickness. 
     
     
         21 . The solid-state imaging device according to  claim 10 , wherein the first film includes oxide and the first lens layer includes SiN. 
     
     
         22 . The solid-state imaging device according to  claim 11 , wherein the second film includes oxide and the second lens layer and the third lens layer include SiN. 
     
     
         23 . The solid-state imaging device according to  claim 10 , wherein a refractive index difference between the first film and the first lens layer is greater than a refractive index difference between the first film the second lens layer. 
     
     
         24 . The solid-state imaging device according to  claim 11 , wherein each pixel further includes a color filter. 
     
     
         25 . The electronic apparatus according to  claim 18 , wherein the first film has a uniform film thickness. 
     
     
         26 . The electronic apparatus according to  claim 18 , wherein the first film and the first lens layer conform to one another. 
     
     
         27 . The electronic apparatus according to  claim 18 , wherein each pixel further includes a color filter. 
     
     
         28 . The electronic apparatus according to  claim 18 , wherein the first lens layer is thicker than the second lens layer. 
     
     
         29 . The electronic apparatus according to  claim 18 , further comprising:
 a wiring layer between a substrate that includes the photoelectric conversion unit and the plurality of lens layers.