Method for producing vapor deposition mask, and method for producing organic semiconductor element

Abstract

A method for producing a vapor deposition mask capable of satisfying both enhancement in definition and reduction in weight even when a size is increased, and a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition are provided. A vapor deposition mask is produced by the steps of preparing a metal plate with a resin layer in which a resin layer is provided on one surface of a metal plate, forming a metal mask with a resin layer by forming a slit that penetrates through only the metal plate, for the metal plate in the metal plate with a resin layer, and thereafter, forming a resin mask by forming openings corresponding to a pattern to be produced by vapor deposition in a plurality of rows lengthwise and crosswise in the resin layer by emitting a laser from the metal mask side.

1 . A method for producing a vapor deposition mask that is formed by a resin mask having openings corresponding to a pattern to be produced by vapor deposition, comprising the step of:
 providing a resin layer;   forming the resin mask by forming the openings corresponding to a pattern to be produced by vapor deposition in the resin layer by emitting a laser.   
     
     
         2 . The method of producing a vapor deposition mask according to  claim 1 ,
 wherein a thickness of the resin mask is within a range not less than about 3 μm and less than about 10 μm.   
     
     
         3 . The method of producing a vapor deposition mask according to  claim 1 ,
 wherein a sectional shape of the resin mask is a shape including broadening toward a vapor deposition source side.   
     
     
         4 . The method of producing a vapor deposition mask according to  claim 1 ,
 wherein a thermal expansion coefficient of the resin mask is not more than about 16 ppm/° C.