Non-stoichiometric resistive switching memory device and fabrication methods

Abstract

Providing for a resistive switching memory device is described herein. By way of example, the resistive switching memory device can comprise a bottom electrode, a conductive layer, a resistive switching layer, and a top electrode. Further, two or more layers can be selected to mitigate mechanical stress on the device. In various embodiments, the resistive switching layer and conductive layer can be formed of compatible metal nitride or metal oxide materials having different nitride/oxide concentrations and different electrical resistances. Further, similar materials can mitigate mechanical stress on the resistive switching layer and a conductive filament of the resistive switching memory device.

1 - 20 . (canceled) 
     
     
         21 . A resistive non-volatile memory device, comprising:
 an electrically conductive bottom electrode formed overlying a substrate material;   an active region formed overlying the bottom electrode, the active region comprising:
 a switching layer comprised of a first metal oxide compound (MOy), where y is a relative concentration of oxygen with respect to atomic metal of the first metal oxide compound; 
 a conductor layer comprised of one of: a second metal oxide compound (MOx) or a metal nitride compound (MNx), where x is a second relative concentration of oxygen or nitrogen with respect to atomic metal of the second metal oxide compound or metal nitride compound, where y>x, and wherein the conductor layer is configured to provide metal ions of the atomic metal to form a metal filament within the switching layer in response to a voltage or electric field applied across the resistive non-volatile memory device; and 
   a top electrode overlying the active region.   
     
     
         22 . The resistive non-volatile memory device of  claim 21 , wherein the switching layer is a non-stoichiometric aluminum oxide compound AlOy. 
     
     
         23 . The resistive non-volatile memory device of  claim 21 , wherein the conductor layer is a non-stoichiometric aluminum oxide compound AlOx or a non-stoichiometric aluminum nitride compound AlNx. 
     
     
         24 . The resistive non-volatile memory device of  claim 21 , wherein the first metal oxide compound is a first non-stoichiometric aluminum oxide compound AlOy and the conductor layer is a second non-stoichiometric aluminum oxide compound AlOx or a non-stoichiometric aluminum nitride compound AlNx, where y>x. 
     
     
         25 . The resistive non-volatile memory device of  claim 21 , wherein the electrically conductive bottom electrode is an electrically conductive metal oxide or metal nitride material. 
     
     
         26 . The resistive non-volatile memory device of  claim 21 , wherein the conductor layer has a thickness within a range of about 2 nm to about 20 nm. 
     
     
         27 . The resistive non-volatile memory device of  claim 21 , wherein the switching layer has a thickness within a range of about 4 nm to about 100 nm. 
     
     
         28 . The resistive non-volatile memory device of  claim 21 , wherein the switching layer has a thickness within a range of about 4 nm to about 100 nm and the conductor layer has a thickness within a range of about 2 nm to about 20 nm. 
     
     
         29 . The resistive non-volatile memory device of  claim 21 , wherein the conductor layer is in physical contact with the switching layer, the electrically conductive bottom electrode is in physical contact with one of: the switching layer or the conductor layer, and the top electrode is in contact with a second of: the switching layer or the conductor layer. 
     
     
         30 . The resistive non-volatile memory device of  claim 21 , wherein:
 the first metal oxide compound is a first non-stoichiometric aluminum oxide compound AlOy with a thickness in a range of about 4 nm to about 100 nm;   the conductor material is a non-stoichiometric aluminum nitride compound AlNx, where y>x, with a second thickness in a second range of about 2 nm to about 20 nm; and at least one of:   the electrically conductive bottom electrode is an electrically conductive metal oxide compound; or   the top electrode is an electrically conductive metal nitride compound.   
     
     
         31 . A method of fabricating a resistive switching memory device, comprising:
 disposing a semiconductor substrate within a processing chamber;   forming a bottom electrode overlying the semiconductor substrate;   forming a layer of metal oxide compound overlying the bottom electrode, the metal oxide compound comprising an atomic metal and atomic oxygen and configured to receive particles of the atomic metal from exterior to the layer of metal oxide compound within the layer of metal oxide compound;   forming a layer of metal nitride compound overlying the bottom electrode and in contact with the layer of metal oxide compound, wherein the layer of metal nitride compound is configured to provide the particles of the atomic metal to form a conductive structure within the layer of metal oxide compound in response to a voltage or electric field applied to the resistive switching memory device; and   a top electrode overlying the layer of metal oxide compound and the layer of metal nitride compound.   
     
     
         32 . The method of  claim 31 , further comprising forming the layer of metal oxide compound from about 1.00 to about 1.50 parts oxide. 
     
     
         33 . The method of  claim 31 , further comprising forming the layer of metal oxide compound with a thickness within a range of about 2 nm to about 20 nm. 
     
     
         34 . The method of  claim 33 , further comprising forming the layer of metal oxide compound to have a ratio of metal to oxide and the thickness within the range of about 2 nm to about 20 nm to produce an electrical resistance for the layer of metal oxide compound within a range of about 1 mega-ohms to about 100 mega-ohms. 
     
     
         35 . The method of  claim 31 , further comprising forming the layer of metal nitride material from one part metal to a range from about 0.6 to about 0.8 parts nitride. 
     
     
         36 . The method of  claim 31 , further comprising forming the layer of metal nitride compound with a thickness within a range of about 4 nm to about 100 nm. 
     
     
         37 . The method of  claim 36 , further comprising forming the layer of metal nitride compound to have a ratio of metal to nitrogen and the thickness within the range of about 4 nm to about 100 nm to produce an electrical resistance for the layer of metal nitride compound within a range of about 1 kilo-ohms to about 100 kilo-ohms. 
     
     
         38 . The method of  claim 31 , further comprising:
 forming the layer of metal oxide compound from one part aluminum and a range from about 1.00 to about 1.50 parts oxide; and   forming the layer of metal nitride compound from one part aluminum and a second range from about 0.6 to about 0.8 parts nitride.   
     
     
         39 . The method of  claim 38 , further comprising:
 forming the layer of metal oxide compound to have a first thickness within a first range of about 2 nm to about 20 nm; and   forming the layer of metal nitride compound to have a second thickness within a second range of about 4 nm to about 100 nm.   
     
     
         40 . The method of  claim 39 , further comprising forming the layer of metal oxide compound to be a non-stoichiometric metal oxide compound.