Semiconductor storage device

Abstract

The semiconductor storage device of an embodiment includes a first conductive layer, a stack disposed above the first conductive layer and including a plurality of second conductive layers in a first direction, and a columnar body that extends in the first direction through the stack, and includes a semiconductor layer and a charge storage film provided between the plurality of conductive layers and the semiconductor layer. A first conductive layer out of the plurality of conductive layers is connected to the semiconductor layer, and the semiconductor layer includes a first region in which a concentration of an n-type impurity is higher than a concentration of a p-type impurity, a second region in which a concentration of a p-type impurity is higher than a concentration of an n-type impurity, and a third region contacted to the first conductive layer and disposed closer to the first region than the second region in the first direction.

What is claimed is: 
     
         1 . A semiconductor storage device, comprising:
 a first conductive layer;   a stack disposed above the first conductive layer and including a plurality of second conductive layers stacked in a first direction; and   a columnar body that extends in the first direction through the stack, and includes a semiconductor layer and a charge storage film disposed between the plurality of conductive layers and the semiconductor layer,   the first conductive layer is in contact with the semiconductor layer,   the semiconductor layer includes a first region in which a concentration of an n-type impurity is higher than a concentration of a p-type impurity, a second region in which a concentration of the p-type impurity is higher than a concentration of the n-type impurity, and a third region contacted to the first conductive layer and disposed closer to the first region than the second region in the first direction.   
     
     
         2 . The semiconductor storage device according to  claim 1 , wherein the first region extends from the boundary between the first conductive layer and the semiconductor layer in the first direction. 
     
     
         3 . The semiconductor storage device according to  claim 1 , wherein the semiconductor layer further includes a third region, and
 the third region does not contain the n-type impurity and the p-type impurity or has a lower concentration of the p-type impurity and the n-type impurity than the second region.   
     
     
         4 . The semiconductor storage device according to  claim 1 , wherein a concentration of the n-type impurity at the boundary between the first conductive layer and the semiconductor layer is higher than a concentration of the n-type impurity at a boundary between the first region and the second region. 
     
     
         5 . The semiconductor storage device according to  claim 1 , wherein the concentration of the n-type impurity of the semiconductor layer decreases with distance from the boundary between the first conductive layer and the semiconductor layer in the first direction. 
     
     
         6 . The semiconductor storage device according to  claim 1 , wherein the concentration of the p-type impurity of the semiconductor layer decreases with distance from the boundary between the first conductive layer and the semiconductor layer in the first direction. 
     
     
         7 . The semiconductor storage device according to  claim 1 , wherein the first conductive layer includes a first portion and a second portion,
 the first portion contains the n-type impurity, the second portion contains the p-type impurity, and   at least a portion of the second portion is disposed between the first portion and the semiconductor layer.   
     
     
         8 . The semiconductor storage device according to  claim 7 , wherein the first conductive layer further includes a third portion,
 the third portion contains a carbon element, and   at least a portion of the third portion is disposed between the first portion and the second portion.   
     
     
         9 . The semiconductor storage device according to  claim 7 , wherein the first portion further contains a carbon element. 
     
     
         10 . The semiconductor storage device according to  claim 1 , wherein the stack includes a second conductive layer closest to the first conductive layer, and
 at least a portion of the second region falls within a range of a height of the second conductive layer in the first direction.   
     
     
         11 . The semiconductor storage device according to  claim 1 , wherein the stack includes a first stack and a second stack in order of proximity to the first conductive layer, and
 at least a portion of the second region falls within a range of a height of the first stack in the first direction.   
     
     
         12 . The semiconductor storage device according to  claim 1 , wherein the first region is an n-type semiconductor. 
     
     
         13 . The semiconductor storage device according to  claim 1 , wherein the second region is a p-type semiconductor. 
     
     
         14 . The semiconductor storage device according to  claim 1 , wherein the n-type impurity contains phosphorus. 
     
     
         15 . The semiconductor storage device according to  claim 1 , wherein the p-type impurity contains boron. 
     
     
         16 . The semiconductor storage device according to  claim 1 , wherein the stack is disposed on a logic circuit.