Memory device and method of forming the same

Abstract

A memory device may be provided, including a first planar electrode, a second planar electrode, and a switching element arranged between the first planar electrode and the second planar electrode to where a first side of the switching element is arranged over the first planar electrode and where a second side of the switching element is arranged under the second planar electrode. The switching element is thicker at the first side than the second side, and the switching element is configured to provide a conductive filament formation region.

1 . A memory device, comprising:
 a first planar electrode;   a second planar electrode; and   a switching element arranged between the first planar electrode and the second planar electrode to where a first side of the switching element is arranged over the first planar electrode and where a second side of the switching element is arranged under the second planar electrode;   wherein the switching element is thicker at the first side than the second side; wherein the switching element is configured to provide a conductive filament formation region.   
     
     
         2 . The memory device of  claim 1 , wherein the switching element has a triangular or trapezoidal cross-section. 
     
     
         3 . The memory device of  claim 1 , further comprising:
 a layer at least partially lining the switching element.   
     
     
         4 . The memory device of  claim 1 , further comprising:
 a dielectric layer arranged between the first planar electrode and the second planar electrode, wherein the dielectric layer is arranged around the switching element.   
     
     
         5 . The memory device of  claim 1 , further comprising:
 a component arranged between the switching element and the second planar electrode; wherein the component is in electrical communication with the second planar electrode.   
     
     
         6 . The memory device of  claim 5 , wherein the component comprises a nanopillar. 
     
     
         7 . The memory device of  claim 5 , wherein:
 the component comprises a film embedded with nanoparticles.   
     
     
         8 . The memory device of  claim 1 , wherein the switching element comprises a plurality of nanowires extending from the first planar electrode toward the second planar electrode. 
     
     
         9 . The memory device of  claim 8 , wherein each nanowire of the plurality of nanowires comprises a first end and a second end, wherein the first ends of the plurality of nanowires are arranged near the first planar electrode and the second ends of the plurality of nanowires are arranged near the second planar electrode. 
     
     
         10 . The memory device of  claim 9 , wherein an area enclosed by the first ends of the plurality of nanowires is substantially thicker than an area enclosed by the second ends of the plurality of nanowires. 
     
     
         11 . The memory device of  claim 1 , wherein the memory device is a resistive random access memory device or a phase-change random access memory device. 
     
     
         12 . A method of forming a memory device, the method comprising:
 providing a first planar electrode;   providing a switching element over the first planar electrode; and   providing a second planar electrode over the switching element;   wherein the switching element is arranged to where a first side of the switching element is arranged over the first planar electrode and where a second side of the switching element is arranged under the second planar electrode; wherein the switching element is thicker at the first side than the second side; wherein the switching element is configured to provide a conductive filament formation region.   
     
     
         13 . The method of  claim 12 , wherein providing the switching element comprises:
 forming a switching layer over the first planar electrode; and   etching or milling the switching layer to form the switching element, wherein the switching element has a triangular or trapezoidal cross-section.   
     
     
         14 . The method of  claim 12 , further comprising:
 forming a layer at least partially lining the switching element.   
     
     
         15 . The method of  claim 12 , further comprising:
 forming a dielectric layer over the first planar electrode and the switching element, wherein the dielectric layer is arranged around the switching element.   
     
     
         16 . The method of  claim 12 , further comprising:
 forming a component on the switching element; and   forming the second planar electrode on the component, wherein the component is in electrical communication with the second planar electrode.   
     
     
         17 . The method of  claim 16 , wherein forming the component comprises:
 forming a metal layer on the switching element; and   milling the metal layer to form the component, wherein the component comprises a nanopillar.   
     
     
         18 . The method of  claim 16 , wherein forming the component comprises:
 forming a film embedded with nanoparticles.   
     
     
         19 . The method of  claim 12 , wherein providing the switching element comprises:
 forming a plurality of nanowires extending from the first planar electrode toward the second planar electrode.   
     
     
         20 . The method of  claim 19 , wherein each nanowire of the plurality of nanowires comprises a first end and a second end, wherein the first ends of the plurality of nanowires are arranged near the first planar electrode and the second ends of the plurality of nanowires are arranged near the second planar electrode.