Electronic circuit structure and method of fabricating electronic circuit structure having magnetoresistance element with improved electrical contacts

Abstract

An apparatus including a magnetoresistance element having conductive contacts disposed between the magnetoresistance element and a semiconductor substrate.

What is claimed is: 
     
         1 . An electronic circuit structure, comprising:
 a semiconductor substrate, a top surface of the semiconductor substrate comprising a first layer of insulating material, the top surface of the semiconductor substrate comprising first and second conductive vias passing through the top surface, the top surface of the semiconductor substrate being a polished surface; and   first and second conductive contacts having a separation parallel to the top surface of the semiconductor substrate, wherein the first conductive contact is disposed between the first conductive via and a magnetoresistance element and the second conductive contact is disposed between the second conductive via and the magnetoresistance element, wherein the first conductive contact is in electrical contact with the first conductive via and not with the second conductive via, and wherein the second conductive contact is in electrical contact with the second conductive via and not with the first conductive via,   wherein the magnetoresistance element is disposed upon the first and second conductive contacts, the magnetoresistance element having a bottom surface in electrical contact with the first and second conductive contacts and a top surface distal from the first and second conductive contacts, wherein the first and second conductive vias are operable to pass a current from the first conductive via to the first conductive contact, from the first conductive contact to the magnetoresistance element, through the magnetoresistance element in a direction substantially parallel to the top surface of the substrate, from the magnetoresistance element into the second conductive contact, and from the second conductive contact to the second conductive via.   
     
     
         2 . The electronic circuit structure of  claim 1 , further comprising:
 an insulating material disposed between the first and second conductive contacts.   
     
     
         3 . The electronic circuit structure of  claim 1 , wherein the top surfaces of the first and second conductive contacts are exposed. 
     
     
         4 . The electronic circuit structure of  claim 1 , wherein the magnetoresistance element is deposited over the first and second conductive contacts and over the top surface of the second layer of insulating material. 
     
     
         5 . The electronic circuit structure of  claim 1 , wherein the top surface of the layer of conductive material is exposed. 
     
     
         6 . The electronic circuit structure of  claim 1 , wherein respective proximate edges of the first and second conductive contacts are sloped less than sixty degrees relative to the top surface of the semiconductor substrate. 
     
     
         7 . The electronic circuit structure of  claim 6 , wherein the magnetoresistance element is over the sloped proximate edges. 
     
     
         8 . The electronic circuit structure of  claim 1 , wherein the first and second conductive contacts have respective proximate edges sloped less than sixty degrees relative to the top surface of the semiconductor substrate, wherein the magnetoresistance element is also disposed upon the sloped proximate edges. 
     
     
         9 . An electronic circuit structure, comprising:
 a semiconductor substrate having first and second conductive vias;   first and second conductive contacts disposed over and in electrical contact with the first and second conductive vias; and   a magnetoresistance element over and in electrical contact with the first and second conductive contacts.   
     
     
         10 . The electronic circuit structure of  claim 9 , further comprising:
 an insulating material disposed between the first and second conductive contacts.   
     
     
         11 . The electronic circuit structure of  claim 10 , wherein the first and second conductive contacts have respective proximate edges sloped less than sixty degrees relative to a top surface of the semiconductor substrate, wherein the magnetoresistance element is disposed upon the sloped proximate edges.