Imaging device, module, electronic device, and method of operating the imaging device

Abstract

An imaging device that has a structure where a transistor is used in common by a plurality of pixels and is capable of imaging with a global shutter system is provided. A transistor that resets the potential of a charge detection portion, a transistor that outputs a signal corresponding to the potential of the charge detection portion, and a transistor that selects a pixel are used in common by the plurality of pixels. A node AN (a first charge retention portion), a node FD (a second charge retention portion), and a node FDX (the charge detection portion) are provided. Imaging data obtained in the node AN is transferred to the node FD, and the imaging data is sequentially transferred from the node FD to the node FDX to be read.

What is claimed is: 
     
         1 . A photoelectric conversion device comprising:
 a photoelectric conversion element;   a first transistor;   a capacitor retaining a charge generated by the photoelectric conversion element input through the first transistor; and   a second transistor,   wherein the charge generated by the photoelectric conversion device during an n-th exposure period is transferred from the capacitor through the second transistor during the (n+1)th exposure period.   
     
     
         2 . A photoelectric conversion device comprising:
 a photoelectric conversion element;   a first transistor;   a capacitor retaining a charge generated by the photoelectric conversion element input through the first transistor;   a second transistor; and   a third transistor,   wherein the charge generated by the photoelectric conversion device during an n-th exposure period is transferred from the capacitor to a gate from the third transistor through the second transistor during the (n+1)th exposure period.   
     
     
         3 . A photoelectric conversion device comprising:
 a first photoelectric conversion element;   a first transistor;   a first capacitor retaining a charge generated by the first photoelectric conversion element input through the first transistor;   a second photoelectric conversion element;   a second transistor;   a third transistor;   a second capacitor retaining a charge generated by the second photoelectric conversion element input through the third transistor; and   a fourth transistor,   wherein the charge generated by the first photoelectric conversion device during an n-th exposure period is transferred from the first capacitor through the second transistor during the (n+1)th exposure period,   wherein the charge generated by the second photoelectric conversion device during the n-th exposure period is transferred from the second capacitor through the fourth transistor during the (n+1)th exposure period, and   wherein the transfer through the second transistor and the transfer through the fourth transistor during the (n+1)th exposure period are performed in sequence.   
     
     
         4 . The photoelectric conversion device according to  claim 3 , further comprising:
 a fifth transistor,   wherein the charge generated by the first photoelectric conversion device during an n-th exposure period is transferred to a gate of the fifth transistor from the first capacitor through the second transistor during the (n+1)th exposure period, and   wherein the charge generated by the second photoelectric conversion device during the n-th exposure period is transferred to the gate of the fifth transistor from the second capacitor through the fourth transistor during the (n+1)th exposure period.