High-performance led fabrication

Abstract

High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm2.

What is claimed is: 
     
         1 . An electrical or opto-electrical subassembly comprising:
 A submount defining at least a first contact;   a chip mounted on said submount defining at least a second contact, wherein said first and second contacts define a distance therebetween;   wherein at least one of said first or second contacts defines a coated portion comprising a layer of material having low wettability for solder, and a non-coated portion; and   solder electrically connecting said first and second contacts, said solder being balled-up on said non-coated portion to span said distance between said first and second contacts.