US2021047541A1PendingUtilityA1
Polishing composition and polishing method using the same
Est. expiryMar 20, 2038(~11.6 yrs left)· nominal 20-yr term from priority
Inventors:Tzu-Chun Tseng
H10P 52/403H10P 95/062C09G 1/02C01B 33/12B24B 37/00C09K 3/14H01L 21/3212
45
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Claims
Abstract
A polishing composition containing spinous silica particles and a dispersing medium, in which the pH is less than 5.
Claims
exact text as granted — not AI-modified1 . A polishing composition comprising: spinous silica particles; and a dispersing medium, wherein a pH is less than 5.
2 . The polishing composition according to claim 1 , wherein the silica particles are cation-modified silica particles.
3 . The polishing composition according to claim 2 , wherein the cation-modified silica particles are amino group-modified silica particles.
4 . The polishing composition according to claim 1 , wherein a pH is 2 or more and 4 or less.
5 . The polishing composition according to claim 1 , wherein the polishing composition is used for a step of polishing an object to be polished containing carbon-added silicon oxide and silicon nitride.
6 . A polishing method comprising the step of polishing an object to be polished by using the polishing composition according to claim 1 .
7 . The polishing method according to claim 6 , wherein the object to be polished contains carbon-added silicon oxide and silicon nitride.
8 . A method of producing a semiconductor substrate, comprising the step of polishing an object to be polished by the polishing method according to claim 6 .Join the waitlist — get patent alerts
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