Transistor outline package and method for producing a transistor outline package

Abstract

A transistor outline (TO) package including a header with at least one optoelectronic device and a pot-shaped metal cap bonded to the header such that a hermetically sealed interior is formed for arranging the at least one optoelectronic device therein. The metal cap includes a window, which is transmissive to electromagnetic radiation, a lateral wall, and an end wall. A portion of the lateral wall and a portion of the end wall are formed with an increased thickness towards the interior compared to a portion of the lateral wall adjacent to the header. The thickened lateral wall portion and the thickened end wall portion have an identical wall thickness.

What is claimed is: 
     
         1 . A transistor outline package, comprising:
 a header with at least one optoelectronic device; and   a pot-shaped metal cap bonded to the header such that a hermetically sealed interior is formed for arranging the at least one optoelectronic device therein, the metal cap including a window being transmissive to electromagnetic radiation, a lateral wall, and an end wall,   wherein a portion of the lateral wall and a portion of the end wall are formed with an increased thickness towards the interior compared to a portion of the lateral wall adjacent to the header, the thickened lateral wall portion and the thickened end wall portion having an identical wall thickness.   
     
     
         2 . The transistor outline package of  claim 1 , wherein the thickened lateral wall portion and the thickened end wall portion have a wall thickness which is at least 1.2 times that of the portion of the lateral wall adjacent to the header. 
     
     
         3 . The transistor outline package of  claim 1 , wherein the thickened lateral wall portion and thickened end wall portion have a wall thickness which is less than 5 times that of the portion of the lateral wall adjacent to the header. 
     
     
         4 . The transistor outline package of  claim 1 , wherein the portion of the lateral wall adjacent to the header has a wall thickness of 0.10-0.25 mm, 
     
     
         5 . The transistor outline package of  claim 4 , wherein the thickened lateral wall portion and the thickened end wall portion have a wall thickness of 0.3-1.0 mm. 
     
     
         6 . The transistor outline package of  claim 1 , wherein the metal cap includes a transition area of the lateral wall of the metal cap, at which a wall thickness of the wall changes, and an upper surface of the header is spaced from the transition area of the lateral wall of the metal cap. 
     
     
         7 . The transistor outline package of  claim 6 , wherein the at least one optoelectronic device disposed on the header protrudes below the transition area. 
     
     
         8 . The transistor outline package of  claim 1 , wherein the metal cap is in the form of a deep-drawn cap and the window is in the form of a soldered lens. 
     
     
         9 . The transistor outline package of  claim 1 , wherein the metal cap has an outer diameter of at least one of at least 2 mm and at most 10 mm. 
     
     
         10 . The transistor outline package of  claim 1 , further comprising an optical subassembly with a housing that is bonded to the transistor outline package for connection of a single-mode fiber. 
     
     
         11 . The transistor outline package of  claim 10 , wherein at least one of the metal cap and the housing of the optical sub-assembly is made of a material having a coefficient of linear thermal expansion, averaged between 20 and 300° C., of less than 14 ppm/K, and wherein the metal cap is made of an iron-nickel or nickel-cobalt alloy or of a ferritic stainless steel. 
     
     
         12 . The transistor outline package of  claim 10 , wherein the metal cap and the housing of the optical sub-assembly are bonded to each other through a plurality of weld spots that are distributed irregularly around a circumference of the housing of the optical sub-assembly. 
     
     
         13 . The transistor outline package of  claim 1 , wherein the transistor outline package is one of a TO-41, TO-46, TO-38, and TO-56 type package. 
     
     
         14 . The transistor outline package of  claim 1 , wherein the thickened lateral wall portion at least one of extends over at least 30% and over less than 90% of a height of the lateral wall. 
     
     
         15 . The transistor outline package of  claim 1 , wherein the window is arranged centrally in the end wall, and wherein the lateral wall includes a lower portion which has a smaller wall thickness compared to at least one of a portion of the lateral wall adjacent to the lower portion and the end wall. 
     
     
         16 . An assembly, comprising:
 a transistor outline package including a header with at least one optoelectronic device and a pot-shaped metal cap bonded to the header such that a hermetically sealed interior is formed for arranging the at least one optoelectronic device therein, the metal cap including a window being transmissive to electromagnetic radiation, a lateral wall, and an end wall, a portion of the lateral wall and a portion of the end wall being formed with an increased thickness towards the interior compared to a portion of the lateral wall adjacent to the header, the thickened lateral wall portion and the thickened end wall portion having an identical wall thickness; and   an optical sub-assembly for connecting a light-conducting fiber, the optical sub-assembly including a housing that is welded to the metal cap at a location of at least one of the thickened portion of the lateral wall and the thickened portion of the end wall.   
     
     
         17 . The assembly of  claim 16 , wherein the metal cap and the housing of the optical sub-assembly are bonded to each other through a plurality of weld spots that are distributed irregularly around a circumference of the housing of the optical sub-assembly. 
     
     
         18 . The assembly of  claim 16 , wherein the thickened lateral wall portion and the thickened end wall portion have a wall thickness which is at least 1.2 times that of the portion of the lateral wall adjacent to the header. 
     
     
         19 . The assembly of  claim 16 , wherein the metal cap includes a transition area of the lateral wall of the metal cap, at which a wall thickness of the wall changes, and an upper surface of the header is spaced from the transition area of the lateral wall of the metal cap. 
     
     
         20 . The assembly of  claim 16 , wherein the metal cap is in the form of a deep-drawn cap and the window is in the form of a soldered lens.