Polishing-amount simulation method for buffing, and buffing apparatus

Abstract

One embodiment of the invention provides a method for simulating polishing amount in a case where a polishing pad of a smaller size than a substrate is used to buff the substrate. The method includes measuring distributions of pressure that is applied from the polishing pad to the substrate according to each overhang amount of the polishing pad relative to the substrate by using a pressure sensor, and correcting the pressure that is used in the polishing amount simulation in accordance with the overhang amounts and the measured pressure distributions.

1 - 8 . (canceled) 
     
     
         9 . A buffing apparatus for buffing a substrate by using a polishing pad of a smaller size than the substrate, wherein:
 the buffing apparatus is configured so that a part of the polishing pad oscillates over the substrate during buffing, and   the buffing apparatus includes a simulation section configured to simulate polishing amount of the substrate on a given buffing condition.   
     
     
         10 . The buffing apparatus of  claim 9 , wherein the simulation section performs pressure correction for correcting an effect of pressure concentration that occurs when the polishing pad oscillates over the substrate. 
     
     
         11 . The buffing apparatus of  claim 9 , wherein the simulation section calculates a buffing condition that is required to achieve a given target polishing amount. 
     
     
         12 . The buffing apparatus of  claim 11 , wherein the buffing condition to be calculated is oscillation velocity of the polishing pad. 
     
     
         13 . The buffing apparatus of  claim 11 , including a sensor for measuring the polishing amount of the substrate, wherein
 the simulation section compares the measured polishing amount of the substrate that is buffed on the calculated buffing condition with the target polishing amount and, if the target polishing amount is not achieved, calculates a required buffing condition based on the measured polishing amount and the target polishing amount.