US2021008685A1PendingUtilityA1

Chemical mechanical polishing apparatus, chemical mechanical polishing method and method of manufacturing display apparatus using the same

Assignee: SAMSUNG DISPLAY CO LTDPriority: Jul 12, 2019Filed: Jul 10, 2020Published: Jan 14, 2021
Est. expiryJul 12, 2039(~12.9 yrs left)· nominal 20-yr term from priority
H10P 52/403H10P 95/062B24B 7/228B24B 37/10B24B 57/02B24B 37/20B24B 37/345B24B 37/105H01L 21/3212H10P 72/0428H10P 72/0406H10P 52/00H10P 52/402
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Claims

Abstract

A method of manufacturing a display and a chemical mechanical polishing method which employ a chemical mechanical polishing apparatus that includes a conveyor belt to transfer a substrate, a polishing head disposed on the conveyor belt, and a body part which moves the polishing head and supplies a slurry to the polishing head. The polishing head includes a first polishing part including a first polishing pad surrounding a first slurry outlet, and a second polishing part surrounding the first polishing part and including a second polishing pad. A second slurry outlet is formed between the first polishing part and the second polishing part, and the first polishing part and the second polishing part are movable independently of each other in a direction substantially perpendicular to the substrate.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A chemical mechanical polishing apparatus, comprising:
 a conveyor belt to transfer a substrate;   a polishing head disposed on the conveyor belt; and   a body part connected to the polishing head, the body part moving the polishing head and supplying a slurry to the polishing head, and   wherein the polishing head comprises:
 a first slurry outlet; 
 a first polishing part including a first polishing pad surrounding the first slurry outlet; 
 a second polishing part surrounding the first polishing part and including a second polishing pad; and 
 a second slurry outlet disposed between the first polishing part and the second polishing part, 
   wherein the first polishing part and the second polishing part are movable independently of each other in a direction substantially perpendicular to the substrate.   
     
     
         2 . The chemical mechanical polishing apparatus of  claim 1 , further comprising:
 a first rotating member connected to the first polishing part; and   a second rotating member surrounding the first rotating member and connected to the second polishing part, wherein   the first slurry outlet is formed along the first polishing part and the first rotating part, and   the second slurry outlet is formed between the first polishing part and the second polishing part, and between the first rotating member and the second rotating member.   
     
     
         3 . The chemical mechanical polishing apparatus of  claim 2 , wherein
 the first polishing part has a cylindrical shape, and   the first polishing part and the second polishing part are rotatable together or respectively.   
     
     
         4 . The chemical mechanical polishing apparatus of  claim 1 , further comprising:
 a third polishing part surrounding the second polishing part and including a third polishing pad.   
     
     
         5 . The chemical mechanical polishing apparatus of  claim 1 , further comprising:
 a third polishing part spaced apart from the first polishing part and including a third polishing pad, wherein   the second polishing part disposed between the first polishing part and the third polishing part, and   an area of the first polishing pad and an area of the third polishing pad are different from each other.   
     
     
         6 . The chemical mechanical polishing apparatus of  claim 1 , further comprising:
 a supporting part disposed adjacent to the substrate on the conveyer belt to compensate for a step with the substrate.   
     
     
         7 . The chemical mechanical polishing apparatus of  claim 6 , wherein a thickness of the substrate is approximately equal to a thickness of the supporting part. 
     
     
         8 . The chemical mechanical polishing apparatus of  claim 1 , wherein
 the first polishing pad has a first area,   the second polishing pad has a second area,   when the polishing head overlaps a substantially entire area of the substrate on a plan view, both the first polishing part and the second polishing part contact the substrate to polish the substrate, and   when the polishing head partially overlaps the substrate on a plan view, the first polishing part moves vertically closer to the substrate than the second polishing part, so that only the first polishing part contacts the substrate to polish the substrate.   
     
     
         9 . The chemical mechanical polishing apparatus of  claim 8 , further comprising a third polishing pad having a third area, wherein
 when the polishing head overlaps the substantially entire area of the substrate on a plan view, the first polishing part, the second polishing part, and the third polishing part contact the substrate to polish the substrate.   
     
     
         10 . A chemical mechanical polishing method, comprising:
 loading a substrate on a conveyer belt;   polishing an upper surface of the substrate by a chemical mechanical polishing apparatus comprising a polishing head disposed on the conveyer belt, wherein the polishing head includes a first slurry outlet, a first polishing part surrounding the first slurry outlet, and a second polishing part surrounding the first polishing part;   polishing the upper surface of the substrate with at least one of the first polishing part and the second polishing part; and   unloading the substrate from the conveyer belt.   
     
     
         11 . The chemical mechanical polishing method of  claim 10 , further comprising:
 attaching a supporting part adjacent to the substrate on the conveyer belt to compensate for a step with the substrate.   
     
     
         12 . The chemical mechanical polishing method of  claim 10 , wherein when the polishing head overlaps a substantially entire area of the substrate on a plan view, both the first polishing part and the second polishing part contact the substrate to polish the substrate. 
     
     
         13 . The chemical mechanical polishing method of  claim 12 , further comprising:
 providing a third polishing part in the chemical mechanical polishing apparatus; and   polishing the upper surface of the substrate with the first polishing part, the second polishing part, and the third polishing part when the polishing head overlaps the substantially entire area of the substrate on a plan view.   
     
     
         14 . The chemical mechanical polishing method of  claim 10 , wherein when the polishing head partially overlaps the substrate on a plan view, the first polishing part moves vertically closer to the substrate than the second polishing part, so that only the first polishing part contacts the substrate to polish the substrate. 
     
     
         15 . A method of manufacturing a display, comprising:
 forming a display device on a carrier substrate;   separating the display device from the carrier substrate;   removing a residual layer on the carrier substrate by a chemical mechanical polishing apparatus;   removing an outer portion which remains at an edge portion on the carrier substrate by the chemical mechanical polishing apparatus;   forming a new display device on the carrier substrate.   
     
     
         16 . The method of  claim 15 , wherein
 the chemical mechanical polishing apparatus includes a first polishing part and a second polishing part, and   the removing the residual layer includes polishing the carrier substrate with the first polishing part and the second polishing part.   
     
     
         17 . The method of  claim 16 , wherein the removing the outer portion includes moving the first polishing part vertically closer to the carrier substrate than the second polishing part, so that only the first polishing part polishes the carrier substrate to remove the outer portion. 
     
     
         18 . The method of  claim 15 , wherein the outer portion has a higher height than the residual layer. 
     
     
         19 . The method of  claim 15 , further comprising:
 loading the carrier substrate on a conveyer belt before removing the residual layer,   wherein the removing the residual layer and the removing the outer portion are performed while the carrier substrate is transferred by the conveyer belt.   
     
     
         20 . The method of  claim 19 , further comprising:
 attaching a supporting part adjacent to the carrier substrate on the conveyer belt to compensate for a step with the carrier substrate.   
     
     
         21 . The method of  claim 15 , wherein
 the chemical mechanical polishing apparatus comprises a conveyor belt to transfer the carrier substrate, a polishing head disposed on the conveyor belt, and a body part which moves the polishing head and supplies a slurry to the polishing head, and   the polishing head comprises a first polishing part, a second polishing part, and a second slurry outlet formed between the first polishing part and the second polishing part,   wherein the method further comprising moving the first polishing part and the second polishing part independently of each other in a direction substantially perpendicular to the carrier substrate.   
     
     
         22 . The method of  claim 15 , further comprising:
 forming the first polishing part to have a cylindrical shape, and   forming the first polishing part and the second polishing part rotatable together or respectively.   
     
     
         23 . The method of  claim 15 , wherein forming the display device comprises:
 forming a plurality of insulating layers, thin film transistors, circuit lines, organic light emitting diodes on the carrier substrate.

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