Transparent conductive structure and formation thereof

Abstract

Briefly, an embodiment comprises fabricating and/or uses of one or more zinc oxide crystals to form a transparent conductive structure.

1 - 22 . (canceled) 
     
     
         23 . A method of fabricating a transparent conductive structure comprising one or more zinc oxide crystals, the method comprising:
 forming a patterned layer on previously deposited zinc oxide, wherein the patterned layer comprises one of a patterned template layer or a patterned mask layer;   selective etching of the previously deposited zinc oxide if the patterned layer comprises the patterned mask layer; and   selective depositing of zinc oxide by an aqueous solution type deposition if the patterned layer comprises the patterned template layer;   wherein the selective etching or selective depositing to at least partially form one or more three dimensional geometric features to provide additional electrical-type and/or optical-type properties for the transparent conductive structure.   
     
     
         24 . The method of  claim 23 , wherein the selective etching is substantially in accordance with a pattern of openings in the patterned mask layer exposing surface locations of the previously deposited zinc oxide. 
     
     
         25 . The method of  claim 23 , wherein the selective depositing is substantially in accordance with a pattern of openings in the patterned template layer exposing surface locations of the previously deposited zinc oxide. 
     
     
         26 . The method of  claim 23 , wherein the previously deposited zinc oxide is deposited by an aqueous solution type deposition. 
     
     
         27 . The method of  claim 26 , wherein the deposition by an aqueous solution type deposition comprises seeding zinc oxide by nucleation followed by bulk deposition. 
     
     
         28 . The method of  claim 23 , and further comprising:
 depositing more zinc oxide;   forming another patterned layer on the more zinc oxide, wherein the another patterned layer comprises one of a patterned template layer or a patterned mask layer;   selective etching of the more zinc oxide if the patterned layer comprises the patterned mask layer; and   selective depositing of zinc oxide on the more zinc oxide if the patterned layer comprises the patterned template layer.   
     
     
         29 . The method of  claim 28 , wherein the more zinc oxide layer is deposited by aqueous solution type deposition. 
     
     
         30 . The method of  claim 23 , and further comprising: removing the template or mask layer. 
     
     
         31 . The method of  claim 30 , and further comprising:
 forming another patterned layer, wherein the another patterned layer comprises one of a patterned template layer or a patterned mask layer;   selective etching of exposed zinc oxide if the patterned layer comprises the patterned mask layer; and   selective depositing of zinc oxide on the surface of exposed zinc oxide if the patterned layer comprises the patterned template layer.   
     
     
         32 . The method of  claim 23 , wherein the transparent conductive structure is being fabricated as part of an optoelectronic device. 
     
     
         33 . The method of  claim 32 , wherein the optoelectronic device at least in part comprises III-Nitride semiconductor materials. 
     
     
         34 . The method of  claim 32 , wherein at least one of the one or more zinc oxide crystals having been formed in an epitaxial manner with respect to one or more crystals of the optoelectronic device underlying the one or more zinc oxide crystals. 
     
     
         35 . The method of  claim 23 , wherein substantially all of the one or more zinc oxide crystals forming the transparent conductive structure comprise substantially the same crystal orientation. 
     
     
         36 - 55 . (canceled)