Sensor based on smart response of two-dimensional nanomaterial and associated method

Abstract

Aspects of the subject disclosure may include, for example, a process in which a first two-dimensional layer is applied to a substrate that includes all or a portion of an antenna mount. A second two-dimensional layer is applied to the first two-dimensional layer forming a bi-layer element having an axis. An initial electrical resistance exists across the bi-layer element and along its axis, wherein a first change to the substrate results in a second change to the bi-layer element such that the initial electrical resistance is replaced by a lower electrical resistance. Other embodiments are disclosed.

What is claimed is: 
     
         1 . A method comprising:
 applying to a substrate a first two-dimensional layer; and   applying to the first two-dimensional layer a second two-dimensional layer, wherein the first two-dimensional layer and the second two-dimensional layer form a bi-layer element, wherein the bi-layer element has an axis, wherein there is an initial electrical resistance across the bi-layer element along the axis, and wherein a first change to the substrate results in a second change to the bi-layer element such that the initial electrical resistance is replaced by a lower electrical resistance, wherein the substrate comprises all or a portion of an antenna mount.   
     
     
         2 . The method of  claim 1 , wherein the first two-dimensional layer is applied to the substrate by a first film deposition. 
     
     
         3 . The method of  claim 2 , wherein the second two-dimensional layer is applied to the first two-dimensional layer by a second film deposition. 
     
     
         4 . The method of  claim 1 , wherein:
 the applying the first two-dimensional layer comprises a first anion-poor deposition of the first two-dimensional layer on the substrate, resulting in a deficit of Sulfur (S) atoms in the first two-dimensional layer to produce first atomic vacancies; and   the applying the second two-dimensional layer comprises a second anion-poor deposition of the second two-dimensional layer on the first two-dimensional layer, resulting in a deficit of Selenium (Se) atoms in the second two-dimensional layer to produce second atomic vacancies.   
     
     
         5 . The method of  claim 4 , wherein:
 the first two-dimensional layer is Molybdenum Disulfide (MoS2); and   the second two-dimensional layer is Molybdenum Diselenide (MoSe2).   
     
     
         6 . The method of  claim 1 , further comprising detecting, by a processing system including a processor, presence of the lower electrical resistance across the bi-layer element. 
     
     
         7 . The method of  claim 1 , wherein the first change to the substrate comprises a mechanical change, and wherein the substrate comprises part of a cell phone tower. 
     
     
         8 . The method of  claim 7 , wherein the mechanical change comprises a crack. 
     
     
         9 . The method of  claim 1 , wherein the first change to the substrate is caused by mechanical stress, a temperature change, a humidity change, a change in incident light, or any combinations thereof. 
     
     
         10 . The method of  claim 1 , wherein the second change to the bi-layer element comprises migration of first atoms from the first two-dimensional layer to produce first atomic vacancies, migration of second atoms from the second two-dimensional layer to produce second additional atomic vacancies, or any combination thereof. 
     
     
         11 . The method of  claim 1 , wherein the antenna mount comprises all or a portion of a cell phone. 
     
     
         12 . A sensor comprising:
 a first two-dimensional coating applied to a substrate; and   a second two-dimensional coating applied to the first two-dimensional coating, wherein there is a first value of an electrical property across the sensor from a first side of the sensor to a second side of the sensor, wherein a change to the substrate results in a creation of atomic vacancies at an interface between the first two-dimensional coating and the second two-dimensional coating, and wherein the creation of the atomic vacancies changes the first value of the electrical property across the sensor to a different electrical property, wherein the substrate comprises all or a portion of an antenna mount.   
     
     
         13 . The sensor of  claim 12 , further comprising circuitry configured to detect a presence of a lower electrical resistance, wherein the electrical property comprises an electrical resistance, and wherein the creation of the atomic vacancies changes a first value of the electrical resistance across the sensor to the lower electrical resistance. 
     
     
         14 . The sensor of  claim 13 , wherein the circuitry comprises a first electrical contact on the first side of the sensor, a second electrical contact on the second side of the sensor, and a measurement device in operative communication with the first electrical contact and the second electrical contact, and wherein the measurement device is configured to measure electrical resistance. 
     
     
         15 . The sensor of  claim 12 , wherein the first two-dimensional coating is applied to the substrate by a first film deposition and wherein the second two-dimensional coating is applied to the first two-dimensional coating by a second film deposition. 
     
     
         16 . The sensor of  claim 15 , wherein:
 the first two-dimensional coating is Molybdenum Disulfide (MoS2); and   the second two-dimensional coating is Molybdenum Diselenide (MoSe2).   
     
     
         17 . A device comprising:
 a first two-dimensional layer applied to a substrate, wherein the substrate comprises all or a portion of an antenna mount;   a second two-dimensional layer applied to the first two-dimensional layer, wherein the first two-dimensional layer and the second two-dimensional layer form a bi-layer element, wherein there is a starting value of a physical property across the bi-layer element, wherein a physical change to the bi-layer element results in a creation of atomic vacancies at an interface between the first two-dimensional layer and the second two-dimensional layer, and wherein the creation of the atomic vacancies alters the starting value of the physical property to a different value;   a processing system including a processor; and   a memory that stores executable instructions that, when executed by the processing system, facilitate performance of operations, the operations comprising:   detecting that the starting value of the physical property has been altered.   
     
     
         18 . The device of  claim 17 , wherein the starting value of the physical property comprises a starting electrical resistance, wherein the detecting that the starting value of the physical property has been altered to a different value comprises detecting that the starting electrical resistance has been reduced to a lower value. 
     
     
         19 . The device of  claim 18 , wherein the operations further comprise:
 outputting a signal, wherein the signal is output responsive to the detecting that the starting electrical resistance has been reduced, and wherein the signal is a visual signal, an audio signal or any combinations thereof.   
     
     
         20 . The device of  claim 19 , wherein:
 in a first case, the first two-dimensional layer is Molybdenum Disulfide (MoS2), the Molybdenum Disulfide (MoS2) is applied to the substrate by a first film deposition, the second two-dimensional layer is Molybdenum Diselenide (MoSe2), and the Molybdenum Diselenide (MoSe2) is applied to the first two-dimensional layer by a second film deposition; or   in a second case, the first two-dimensional layer is Molybdenum Diselenide (MoSe2), the Molybdenum Diselenide (MoSe2) is applied to the substrate by a third film deposition, the second two-dimensional layer is Molybdenum Disulfide (MoS2) and the Molybdenum Disulfide (MoS2) is applied to the first two-dimensional layer by a fourth film deposition.