Preparation of si-h containing iodosilanes via halide exchange reaction

Abstract

Methods of synthesizing Si—H containing iodosilanes, such as diiodosilane or pentaiododisilane, using a halide exchange reaction are disclosed.

What is claimed is: 
     
         1 . A Si-containing film forming composition delivery device comprising:
 a canister having an inlet conduit and an outlet conduit and containing a Si-containing film forming composition, the Si-containing film forming composition comprising a Si—H containing iodosilane and between approximately 0 ppbw and approximately 100 ppbw Ag, Cu, or Sb; the Si—H containing iodosilane having the formula:
   Si w H x R y I z   (1)
 
   N(SiH a R b I c ) 3   (2) or
 
   (SiH m R n I o ) 2 —CH 2   (3)
 
   
       wherein w is 1 to 3, x+y+z=2w+2, x is 1 to 2w+1, y is 0 to 2w+1, z is 1 to 2w+1, each a is independently 0 to 3, each b is independently 0 to 3, each c is independently 0 to 3, a+b+c=3 provided that at least one a and at least one c is 1, each m is independently 0 to 3, each n is independently 0 to 3, each o is independently 0 to 3, m+n+o=3 provided that at least one m and at least one o is 1, and each R is independently a C1 to C12 hydrocarbyl group, Cl, Br, or a ER′ 3  group, wherein each E is independently Si or Ge and each R′ is independently H or a C1 to C12 hydrocarbyl group. 
     
     
         2 . The Si-containing film forming composition delivery device of  claim 1 , wherein the Si-containing film forming composition comprises between approximately 0 ppmw and approximately 100 ppmw C when y or b or n=0. 
     
     
         3 . The Si-containing film forming composition delivery device of  claim 2 , wherein the Si—H containing iodosilane is SiH 2 I 2 .