Image sensor for compensating for signal difference between pixels

Abstract

An image sensor includes two or more phase-difference detection pixels disposed adjacent to each other, a plurality of general pixels spaced apart from the phase-difference detection pixels, first and second peripheral pixels, and first to third light shields. The first and second peripheral pixels are adjacent to the phase-difference detection pixels, and between the phase-difference detection pixels and the general pixels. The first light shield is disposed in one of the general pixels and has a first width. The second light shield extends into the first peripheral pixel from a first area between the phase-difference detection pixels and the first peripheral pixel, and has a second width different from the first width. The third light shield extends into the second peripheral pixel from a second area between the phase-difference detection pixels and the second peripheral pixel, and has a third width different from the first width.

What is claimed is: 
     
         1 . An image sensor comprising:
 a first phase-difference detection pixel and a second phase-difference detection pixel;   a first general pixel spaced apart from the first and second phase-difference detection pixels;   a first peripheral pixel adjacent to the first phase-difference detection pixel between the first phase-difference detection pixel and the first general pixel;   a first microlens disposed on the first and second phase-difference detection pixels;   a second microlens on the first general pixel; and   a third microlens on the first peripheral pixel,   wherein a size of the first to third microlenses are different from each other.   
     
     
         2 . The image sensor of  claim 1 , further comprising:
 a second peripheral pixel disposed from the first phase-difference detection pixel in a first direction; and   a third peripheral pixel disposed from the second phase-difference detection pixel in the first direction,   wherein the first microlens expands toward a space between the second and third peripheral pixels.   
     
     
         3 . The image sensor of  claim 2 , further comprising:
 a fourth peripheral pixel disposed from the second phase-difference detection pixel; and   a fourth microlens on the fourth peripheral pixel,   wherein a size of the fourth microlens is different from the size of the third microlens.   
     
     
         4 . The image sensor of  claim 2 , wherein the second peripheral pixel includes a red color filter, and the third peripheral pixel includes a green color filter. 
     
     
         5 . The image sensor of  claim 4 , wherein the first phase-difference detection pixel includes a green color filter. 
     
     
         6 . The image sensor of  claim 5 , further comprises a second general pixel provide in a diagonal direction from the first phase-difference detection pixel, and
 wherein the second general pixel includes a green color filter.   
     
     
         7 . The image sensor of  claim 6 , further comprises a device separation film formed between the second peripheral pixel and the third peripheral pixel. 
     
     
         8 . The image sensor of  claim 7 , further comprises a substrate in which the second and third peripheral pixels are formed,
 wherein the substrate has a first surface and a second surface opposite to the first surface,   wherein a plurality of microlenses are formed on the second surface, and   wherein the device separation film is formed from the first surface to the second surface.   
     
     
         9 . The image sensor of  claim 7 , further comprises a substrate in which the second and third peripheral pixels are formed,
 wherein the substrate has a first surface and a second surface opposite to the first surface,   wherein the device separation film contacts with both the first and second surfaces.   
     
     
         10 . The image sensor of  claim 7 , further comprises a substrate in which the second and third peripheral pixels are formed,
 wherein the substrate has a first surface and a second surface opposite to the first surface,   wherein a plurality of microlenses are formed on the second surface, and   wherein the device separation film is formed from the second surface to the first surface.   
     
     
         11 . The image sensor of  claim 7 , further comprises a light shield on the device separation film. 
     
     
         12 . The image sensor of  claim 10 , further comprises a light shield on the device separation film. 
     
     
         13 . An image sensor, comprising:
 a first phase-difference detection pixel and a second phase-difference detection pixel directly adjacent to the first phase-difference detection pixel in a first direction, the first and second phase-difference detection pixels being formed in a first row;   a first peripheral pixel disposed from the first phase-difference detection pixel in a second direction perpendicular to the first direction;   a second peripheral pixel disposed from the second phase-difference detection pixel in the second direction; and   a plurality of microlens formed on the first and second phase-difference detection pixels,   wherein the first and second peripheral pixels are formed in a second row next to the first row,   wherein the microlens expands toward a space between the first and second peripheral pixels so that a part of the microlens is formed in the second row,   wherein the first and second phase-difference detection pixels are surrounded by a plurality of adjacent pixels,   wherein the plurality of adjacent pixels includes the first and second peripheral pixels, and   wherein the plurality of adjacent pixels has at least three green filters, at least one red filter, and at least one blue filter.   
     
     
         14 . The image sensor of  claim 13 , wherein the plurality of adjacent pixels further includes a third peripheral pixel and a fourth peripheral pixel in a third row next to the second row, and
 wherein the microlens expands toward a space between the third and fourth peripheral pixels so that a part of the microlens is formed in the third row.   
     
     
         15 . The image sensor of  claim 14 , wherein the first phase-difference detection pixel includes a green filter. 
     
     
         16 . The image sensor of  claim 15 , further comprises a first general pixel provide in a diagonal direction from the first phase-difference detection pixel, and
 wherein the first general pixel includes a green filter.   
     
     
         17 . The image sensor of  claim 16 , further comprises a device separation film formed between the first peripheral pixel and the second peripheral pixel. 
     
     
         18 . The image sensor of  claim 13 , wherein the plurality of adjacent pixels has six pixels, at right, left, upper and lower side of the first and second phase-difference detection pixels. 
     
     
         19 . The image sensor of  claim 18 , the six pixels has three green filters, one red filter, one blue filter, and one filter of selected from green, blue and red. 
     
     
         20 . The image sensor of  claim 13 , wherein the plurality of adjacent pixels includes one red filter and one blue filter formed in different rows.