Methods and apparatus for depositing yttrium-containing films

Abstract

Methods for depositing a yttrium-containing film through an atomic layer deposition process are described. Some embodiments of the disclosure utilize a plasma-enhanced atomic layer deposition process. Also described is an apparatus for performing the atomic layer deposition of the yttrium containing films.

What is claimed is: 
     
         1 . A processing chamber comprising:
 a susceptor assembly having a top surface with at least one recess sized to support at least one substrate;   a gas distribution assembly having a front surface spaced from the top surface of the susceptor assembly to form a gap, the gas distribution assembly configured to provide gas flows into the gap; and   a controller coupled to the susceptor assembly and the gas distribution assembly, the controller having a first configuration to provide a flow of a yttrium precursor to the gap, the yttrium precursor comprising a yttrium species with a general formula YR 1 R 2 R 3 , where R 1 , R 2  and R 3  are independently selected from halides, carbonyls, cyclopentadienes, amines, acac, hfac, amidinates or diazadienes, a second configuration to provide a flow of a silicon precursor to the gap, and a third configuration to provide a flow of a nitrogen reactant to the gap, wherein the controller is configured to provide the yttrium precursor and the silicon precursor to form a silicon-yttrium species on the at least one substrate and provide the nitrogen reactant to react with the silicon-yttrium species to form a silicon-yttrium nitride film.   
     
     
         2 . The processing chamber of  claim 1 , wherein the silicon precursor comprises a species with a general formula Si n X a R 2n+2−a , Si(NRR′) a R″ 4−a , or a siloxane, where n is 1 to 4, a is 0 to 2n+2, X is a halide and R, R′ and R″ are independently selected from H, alkyl or aryl. 
     
     
         3 . The processing chamber of  claim 1 , wherein the nitrogen reactant comprises one or more of nitrogen, ammonia or hydrazine. 
     
     
         4 . The processing chamber of  claim 1 , wherein the nitrogen reactant comprises a reactant plasma. 
     
     
         5 . The processing chamber of  claim 1 , wherein the yttrium precursor and the silicon precursor are provided to the substrate at the same time. 
     
     
         6 . The processing chamber of  claim 1 , wherein the yttrium precursor and the silicon precursor are provided to the substrate sequentially. 
     
     
         7 . The processing chamber of  claim 1 , wherein the controller further comprises a fourth configuration to provide a treatment plasma to change a property of the silicon-yttrium nitride film. 
     
     
         8 . The processing chamber of  claim 7 , wherein the treatment plasma comprises one or more of nitrogen gas, argon, hydrogen gas, or helium. 
     
     
         9 . A processing chamber comprising:
 a susceptor assembly having a top surface with at least one recess sized to support at least one substrate;   a gas distribution assembly having a front surface spaced from the top surface of the susceptor assembly to form a gap, the gas distribution assembly configured to provide gas flows into the gap; and   a controller coupled to the susceptor assembly and the gas distribution assembly, the controller having a first configuration to provide a flow of a yttrium precursor to the gap, the yttrium precursor comprising a yttrium species with a general formula YR 1 R 2 R 3 , where R 1 , R 2  and R 3  are independently selected from halides, carbonyls, cyclopentadienes, amines, acac, hfac, amidinates or diazadienes, a second configuration to provide a flow of a silicon precursor to the gap, a third configuration to provide a flow of a first nitrogen reactant to the gap, the first nitrogen reactant comprising one or more of ammonia, nitrogen, hydrazine, or plasmas thereof, and a fourth configuration to provide a flow of a second nitrogen reactant to the gap,   
       wherein the controller is configured to sequentially provide the yttrium precursor and the first nitrogen reactant to form a yttrium nitride film on the at least one substrate and sequentially provide the silicon precursor and the second nitrogen reactant to form a silicon nitride film. 
     
     
         10 . The processing chamber of  claim 9 , wherein the silicon precursor comprises a species with a general formula Si n X a R 2n+2−a , Si(NRR′) a R″ 4−a , or a siloxane, where n is 1 to 4, a is 0 to 2n+2, X is a halide and R, R′ and R″ are independently selected from H, alkyl or aryl. 
     
     
         11 . The processing chamber of  claim 9 , wherein the second nitrogen reactant comprises one or more of ammonia, nitrogen, hydrazine, or plasmas thereof. 
     
     
         12 . The processing chamber of  claim 9 , wherein the controller further comprises a fifth configuration to provide a first treatment plasma to change a property of the yttrium nitride film. 
     
     
         13 . The processing chamber of  claim 9 , wherein the controller further comprises a sixth configuration to provide a second treatment plasma to change a property of the silicon nitride film. 
     
     
         14 . The processing chamber of  claim 9 , wherein the controller is configured to repeat forming the yttrium nitride film and the silicon nitride film to form a silicon-yttrium nitride film of a predetermined thickness. 
     
     
         15 . A processing chamber comprising:
 a susceptor assembly having a top surface with at least one recess sized to support at least one substrate;   a gas distribution assembly having a front surface spaced from the top surface of the susceptor assembly to form a gap, the gas distribution assembly configured to provide gas flows into the gap; and   a controller coupled to the susceptor assembly and the gas distribution assembly, the controller having a first configuration to provide a flow of a yttrium precursor to the gap, the yttrium precursor comprising a yttrium species with a general formula YR 1 R 2 R 3 , where R 1 , R 2  and R 3  are independently selected from halides, carbonyls, cyclopentadienes, amines, acac, hfac, amidinates or diazadienes, a second configuration to provide a flow of a silicon precursor to the gap, and a third configuration to provide a flow of a nitrogen reactant to the gap, wherein the controller is configured to provide the yttrium precursor to form a yttrium species on the at least one substrate, provide a nitrogen reactant to react with the yttrium species to form a yttrium nitride film, and provide the silicon precursor to form a silicon-yttrium nitride film.   
     
     
         16 . The processing chamber of  claim 15 , wherein the nitrogen reactant comprises one or more of nitrogen, ammonia or hydrazine. 
     
     
         17 . The processing chamber of  claim 15 , wherein the nitrogen reactant comprises a reactant plasma. 
     
     
         18 . The processing chamber of  claim 15 , wherein the silicon precursor comprises a species with a general formula Si n X a R 2n+2−a , Si(NRR′) a R″ 4−a , or a siloxane, where n is 1 to 4, a is 0 to 2n+2, X is a halide and R, R′ and R″ are independently selected from H, alkyl or aryl. 
     
     
         19 . The processing chamber of  claim 15 , wherein the controller further comprises a fourth configuration to provide a treatment plasma to change a property of the silicon-yttrium nitride film. 
     
     
         20 . The processing chamber of  claim 19 , wherein the treatment plasma comprises one or more of nitrogen gas, argon, hydrogen gas, or helium.