US2020373488A1PendingUtilityA1

Organic compound, anthracene derivative, and light-emitting element, light-emitting device, and electronic device in which the anthracene derivative is used

Assignee: SEMICONDUCTOR ENERGY LABPriority: Apr 25, 2007Filed: Aug 14, 2020Published: Nov 26, 2020
Est. expiryApr 25, 2027(~0.7 yrs left)· nominal 20-yr term from priority
H10K 85/633C09K 11/07C07C 15/28H10K 50/00C09K 11/06C07D 209/82C07D 209/86H05B 33/14C09K 2211/1014Y02B20/00Y10S428/917C09K 2211/1029C09K 2211/1011C09K 2211/1007H01L 51/0061H01L 51/0072H01L 51/0052H01L 51/5012H01L 51/006H10K 50/11H10K 85/636H10K 85/615H10K 85/6572H10K 59/12H10K 71/164
73
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

An anthracene derivative represented by a general formula (1) and an organic compound represented by a general formula (8) are provided. Further, by use of the anthracene derivative represented by the general formula (1), a light-emitting element with high emission efficiency can be obtained. Furthermore, by use of the anthracene derivative represented by the general formula (1), a light-emitting element that emits blue light with high color purity can be obtained.

Claims

exact text as granted — not AI-modified
1 . (canceled) 
     
     
         2 . A method for manufacturing a light-emitting device, comprising the steps of:
 forming a first electrode;   forming a first partition layer and a second partition layer locating separately, over the first electrode;   forming a first layer over the first electrode by a wet process;   forming a light-emitting layer over the first layer by a wet process;   forming a second layer over the light-emitting layer by a dry process; and   forming a second electrode over the second layer.   
     
     
         3 . The method for manufacturing a light-emitting device according to  claim 2 , further comprising:
 forming a third layer between the second layer and the light-emitting layer by a wet process.   
     
     
         4 . The method for manufacturing a light-emitting device according to  claim 2 ,
 wherein the second electrode is a stack of films.   
     
     
         5 . The method for manufacturing a light-emitting device according to  claim 2 ,
 wherein the first partition layer is opposite to the second partition layer,
 wherein the first electrode comprises aluminum, 
   wherein the first layer comprises an aromatic compound and an acceptor,   wherein the second layer comprises an alkaline earth metal compound, and   wherein the second electrode comprises silver, indium, and tin.   
     
     
         6 . The method for manufacturing a light-emitting device according to  claim 3 ,
 wherein the third layer comprises a compound with a high molecular weight.   
     
     
         7 . The method for manufacturing a light-emitting device according to  claim 4 ,
 wherein the second electrode comprises zinc and indium.   
     
     
         8 . A method for manufacturing a light-emitting device comprising an insulating layer, a first light-emitting element and a second light-emitting element, the first light-emitting element comprising a first electrode, a first layer over the first electrode, a second layer over the first layer, a third layer over the second layer, and a fourth layer over the third layer, the second light-emitting element comprising a second electrode, the method comprising the steps of:
 forming the first electrode and the second electrode;   forming the insulating layer comprising a first part extending in a first direction and a second part extending in a second direction, over the first electrode;   forming the first layer over the first electrode and the second electrode by wet process such that the first layer spreads in the first direction and bridges over the second part of the insulating layer;   forming the second layer over the first layer by a wet process;   forming the third layer over the second layer by a wet process; and   forming the fourth layer over the third layer by a dry process.   
     
     
         9 . The method for manufacturing a light-emitting device according to  claim 8 ,
 wherein the first layer is a hole-injecting layer,   wherein the second layer is a hole-transporting layer,   wherein the third layer is a light-emitting layer, and   wherein the fourth layer is an electron-injecting layer.   
     
     
         10 . The method for manufacturing a light-emitting device according to  claim 8 ,
 wherein the wet process is an inkjet method or a spin coating method.   
     
     
         11 . A method for manufacturing a light-emitting device comprising an insulating layer, a first partition layer, a second partition layer, a first light-emitting element and a second light-emitting element, the first light-emitting element comprising a first electrode, a first layer over the first electrode, a second layer over the first layer, a third layer over the second layer, and a fourth layer over the third layer, the second light-emitting element comprising a second electrode, the method comprising the steps of:
 forming the first electrode and the second electrode;   forming the insulating layer over a region between the first electrode and the second electrode;   forming the first partition layer and the second partition layer which extend in the same direction;   forming the first layer over the first electrode and the second electrode by wet process such that the first layer spreads along the first partition layer and the second partition layer and bridges over the insulating layer;   forming the second layer over the first layer by a wet process;   forming the third layer over the second layer by a wet process; and   forming the fourth layer over the third layer by a dry process.   
     
     
         12 . The method for manufacturing a light-emitting device according to  claim 11 ,
 wherein the first layer is a hole-injecting layer,   wherein the second layer is a hole-transporting layer,   wherein the third layer is a light-emitting layer, and   wherein the fourth layer is an electron-injecting layer.   
     
     
         13 . The method for manufacturing a light-emitting device according to  claim 11 ,
 wherein the wet process is an inkjet method or a spin coating method.   
     
     
         14 . A method for manufacturing a light-emitting device comprising a first light-emitting element, a second light-emitting element, a third light-emitting element, a fourth light-emitting element, a first partition layer, and a second partition layer, comprising the steps of:
 forming a first electrode included in the first light-emitting element, a second electrode included in the second light-emitting element, a third electrode included in the third light-emitting element and a fourth electrode included in the fourth light-emitting element,   forming the first partition layer over the first electrode and the second electrode and extending in a first direction and the second partition layer over the third electrode and the fourth electrode and extending in a second direction,   forming a first layer comprising a first light-emitting compound on the first electrode and the second electrode, and a second layer comprising a second light-emitting compound on the third electrode and the fourth electrode by a wet process,   forming a third layer over the first layer by a dry process,   wherein the first electrode and the second electrode locate in the first direction,   wherein the third electrode and the fourth electrode locate in the second direction, and   wherein the first partition layer and the second partition layer are separated.

Join the waitlist — get patent alerts

Track US2020373488A1 — get alerts on status changes and closely related new filings.

We store only your email — no account needed. See our privacy policy.