Laser processing apparatus and stack processing apparatus

Abstract

A laser processing apparatus and a stack processing apparatus are provided. The laser processing apparatus can perform steps selectively by switching of optical paths. The steps are a step in which a first surface of a flat-plate structure is irradiated with a laser and a step in which a surface opposite to the first surface of the structure is irradiated with the laser. The laser is a linear laser whose shape on the irradiated surface is a rectangle. By laser irradiation performed while the structure is moved in the horizontal direction, the whole or a desired region of the first surface or the opposite surface of the structure can be processed.

What is claimed is: 
     
         1 . A stack processing apparatus processing a first stack in which a first substrate, a first layer, a second layer, a third layer, and a second substrate are bonded in this order into a second stack by replacing a third substrate with one of the first substrate and the second substrate,
 the stack processing apparatus comprising:   a first chamber;   a second chamber;   a third chamber;   a fourth chamber, and   a fifth chamber,   wherein the first chamber is configured to be a load chamber for the first stack and an unload chamber for the second stack,   wherein the second chamber is configured to transfer the first stack, the first stack that is being processed, or the second stack,   wherein the third chamber is configured to selectively perform a laser irradiation on the first layer through the first substrate or a laser irradiation on the third layer through the second substrate,   wherein the fourth chamber is configured to separate the first substrate or the second substrate from the first stack, and   wherein the fifth chamber is configured to bond the third substrate on the exposed first layer or the exposed third layer.   
     
     
         2 . The stack processing apparatus according to  claim 1 , wherein the first layer and the third layer are each a resin. 
     
     
         3 . The stack processing apparatus according to  claim 1 , wherein the second layer comprises a transistor comprising an oxide semiconductor in a channel formation region. 
     
     
         4 . The stack processing apparatus according to  claim 1 , wherein the third chamber is provided with a dust collecting mechanism. 
     
     
         5 . A stack processing apparatus processing a first stack in which a first substrate, a first layer, a second layer, a third layer, and a second substrate are bonded in this order into a second stack in which a third substrate, the first layer, the second layer, the third layer, and a fourth substrate are bonded in this order,
 the stack processing apparatus comprising:   a first chamber;   a second chamber;   a third chamber;   a fourth chamber;   a fifth chamber;   a sixth chamber;   a seventh chamber;   an eighth chamber; and   a ninth chamber,   wherein the first chamber is configured to be a load chamber of the first stack,   wherein the second chamber is configured to transfer the first stack or the first stack that is being processed,   wherein the third chamber is configured to selectively perform a laser irradiation on the first layer through the first substrate and a laser irradiation on the third layer through the second substrate,   wherein the fourth chamber is configured to separate the first substrate from the first stack,   wherein the fifth chamber is configured to bond the third substrate on the exposed first layer,   wherein the sixth chamber is configured to transfer the first stack that is being processed or the second stack,   wherein the seventh chamber is configured to separate the second substrate from the first stack that is being processed,   wherein the eighth chamber is configured to bond the fourth substrate on the exposed third layer, so that the second stack is formed, and   wherein the ninth chamber is configured to be an unload chamber of the second stack.   
     
     
         6 . The stack processing apparatus according to  claim 5 , wherein the first layer and the third layer are each a resin. 
     
     
         7 . The stack processing apparatus according to  claim 5 , wherein the second layer comprises a transistor comprising an oxide semiconductor in a channel formation region. 
     
     
         8 . The stack processing apparatus according to  claim 5 , wherein the third chamber is provided with a dust collecting mechanism.