Silicon member and method of producing the same

Abstract

A silicon member and a method of producing the silicon member are provided. Cracking is suppressed in the silicon member even if the silicon member is used in a condition where it is heated. The silicon member 10 includes a coating layer 11 that coats a surface of the silicon member 10, wherein the coating layer 11 is composed of a product of silicon formed by reaction of the silicon on the surface, and a thickness of the coating layer is 15 nm or more and 600 nm or less. It is preferable that the coating layer is a silicon oxide film or a silicon nitride film.

1 . A silicon member that is used in a condition where the silicon member is heated,
 the silicon member comprising a coating layer that coats a surface of the silicon member with micro-cracks, wherein   the coating layer is composed of a product of silicon formed by reaction of the silicon on the surface, and   a thickness of the coating layer is 15 nm or more and 600 nm or less.   
     
     
         2 . The silicon member according to  claim 1 , wherein the coating layer is a silicon oxide film. 
     
     
         3 . The silicon member according to  claim 2 , wherein a thickness of the silicon oxide film is 30 nm or more and 520 nm or less. 
     
     
         4 . The silicon member according to  claim 1 , wherein the coating layer is a silicon nitride film. 
     
     
         5 . A silicon member that is used in a condition where the silicon member is heated,
 wherein after forming a coating layer composed of a product of silicon formed by reaction of the silicon on a surface of the silicon member, the surface is exposed by removing the coating layer.   
     
     
         6 . The silicon member according to  claim 5   wherein a coating layer composed of a product of silicon is re-formed on the exposed surface.   
     
     
         7 . A silicon member that is used in a condition where the silicon member is heated,
 wherein a strained-layer on a surface layer is removed and an arithmetic average roughness Ra is 2 nm or less by polishing or etching a surface of the silicon member.   
     
     
         8 . The silicon member according to  claim 1 , wherein the silicon member is made of a poly-crystalline silicon. 
     
     
         9 . The silicon member according to  claim 1 , wherein the silicon member is made of a pseudo-single-crystalline silicon. 
     
     
         10 . The silicon member according to  claim 1 , wherein a dimension of the silicon member is: width W is 500 mm to 1500 mm; length is 500 mm to 1500 mm; and thickness is 5 mm to 50 mm. 
     
     
         11 - 15 . (canceled) 
     
     
         16 . The silicon member according to  claim 1 , wherein the silicon member is a holding plate for deposition and heat treatment. 
     
     
         17 . The silicon member according to  claim 1 , wherein the surface of the holding plate is free of scratches and micro-cracks. 
     
     
         18 . The silicon member according to  claim 1 , wherein a maximum load in four-point bending of the holding plate is between 188 to 265 MPa. 
     
     
         19 . The silicon member according to  claim 1 , wherein the silicon member is excised from a unidirectionally solidified columnar crystal ingot. 
     
     
         20 . The silicon member according to  claim 1 , wherein the coating layer is a silicon nitride film having a thickness of 15 nm or more and 50 nm or less.