Bonded semiconductor package and related methods

Abstract

Implementations of a semiconductor package may include: a first wafer having a first surface and a first set of blade interconnects, the first set of blade interconnects extending from the first surface. The package may include a second wafer having a first surface and a second set of blade interconnects, the second set of blade interconnects extending from the first surface and oriented substantially perpendicularly to a direction of orientation of the first set of blade interconnects. The first set of blade interconnects may be hybrid bonded to the second set of blade interconnects at a plurality of points of intersection between the first and second set of blade interconnects. The plurality of points of intersection may be located along a length of each blade interconnect of the first set of blade interconnects, and along the length of each blade interconnect of the second set of blade interconnects.

What is claimed is: 
     
         1 . A method of forming a blade interconnect, comprising:
 forming an undercut pattern in a layer on a first surface of a first wafer, where the undercut pattern, when viewed from above the first surface, comprises one of two opposing triangles in the layer or an hourglass shape in the layer;   electroplating a metal into the undercut pattern to form a blade interconnect; and   forming a chamfer in the blade interconnect during electroplating using the one of two opposing triangles or the hourglass shape of the undercut pattern.   
     
     
         2 . The method of  claim 1 , further comprising where the two opposing triangles comprise rounded vertices or the hourglass shape comprises rounded edges. 
     
     
         3 . The method of  claim 1 , further comprising:
 depositing a metal seed layer between the first surface of the first wafer and the layer; and   etching the metal seed layer after electroplating the metal into the undercut pattern.   
     
     
         4 . The method of  claim 1 , further comprising depositing an underfill material around the blade interconnect. 
     
     
         5 . The method of  claim 1 , further comprising depositing a solder layer on the blade interconnect. 
     
     
         6 . The method of  claim 1 , further comprising forming a blade interconnect on a first surface of a second wafer. 
     
     
         7 . The method of  claim 6 , further comprising hybrid bonding the blade interconnect of the second wafer at the chamfer of the blade interconnect of the first wafer. 
     
     
         8 . A method of forming blade interconnects, comprising:
 forming a first undercut pattern in a layer on a first surface of a first wafer, where the first undercut pattern, when viewed from above the first surface, comprises one of two opposing triangles in the layer or an hourglass shape in the layer;   electroplating a metal into the first undercut pattern to form a first blade interconnect;   forming a chamfer in the first blade interconnect during electroplating using the one of two opposing triangles or the hourglass shape of the first undercut pattern;   forming a second undercut pattern in a layer on a first surface of a second wafer, where the second undercut pattern, when viewed from above the first surface, comprises one of two opposing triangles in the layer or an hourglass shape in the layer;   electroplating a metal into the second undercut pattern to form a second blade interconnect;   forming a chamfer in the second blade interconnect during electroplating using the one of two opposing triangles or the hourglass shape of the second undercut pattern.   
     
     
         9 . The method of  claim 8 , further comprising where the two opposing triangles comprise rounded vertices or the hourglass shape comprises rounded edges. 
     
     
         10 . The method of  claim 8 , further comprising:
 depositing a metal seed layer between the first surface of the first wafer and the layer;   depositing a metal seed layer between the first surface of the second wafer and the layer; and   etching the metal seed layers after electroplating the metal into the first undercut pattern and electroplating the metal into the second undercut pattern.   
     
     
         11 . The method of  claim 8 , further comprising depositing an underfill material around the first blade interconnect and depositing an underfill material around the second blade interconnect. 
     
     
         12 . The method of  claim 8 , further comprising depositing a solder layer on the first blade interconnect and depositing a solder layer on the second blade interconnect. 
     
     
         13 . The method of  claim 8 , further comprising hybrid bonding the first blade interconnect and the second blade interconnect at the chamfer of the first blade interconnect and at the chamfer of the second blade interconnect. 
     
     
         14 . A method of forming blade interconnects, comprising:
 forming a first undercut pattern in a layer on a first surface of a first wafer, where the first undercut pattern, when viewed from above the first surface, comprises one of two opposing triangles in the layer or an hourglass shape in the layer;   electroplating a metal into the first undercut pattern to form a first blade interconnect;   forming a second undercut pattern in a layer on a first surface of a second wafer, where the second undercut pattern, when viewed from above the first surface, comprises one of two opposing triangles in the layer or an hourglass shape in the layer; and   electroplating a metal into the second undercut pattern to form a second blade interconnect.   
     
     
         15 . The method of  claim 14 , further comprising where the two opposing triangles comprise rounded vertices or the hourglass shape comprises rounded edges. 
     
     
         16 . The method of  claim 14 , further comprising:
 depositing a metal seed layer between the first surface of the first wafer and the layer;   depositing a metal seed layer between the first surface of the second wafer and the layer; and   etching the metal seed layers after electroplating the metal into the first undercut pattern and electroplating the metal into the second undercut pattern.   
     
     
         17 . The method of  claim 14 , further comprising depositing an underfill material around the first blade interconnect and depositing an underfill material around the second blade interconnect. 
     
     
         18 . The method of  claim 14 , further comprising depositing a solder layer on the first blade interconnect and depositing a solder layer on the second blade interconnect. 
     
     
         19 . The method of  claim 14 , further comprising hybrid bonding the first blade interconnect and the second blade interconnect at an intersection between the first blade interconnect and the second blade interconnect. 
     
     
         20 . The method of  claim 14 , wherein the first blade interconnect and the second blade interconnect each comprise a first sidewall and a second sidewall opposite the first sidewall; and
 wherein the first sidewall comprises an angle from the first surface of one of the first wafer or the second wafer of between 90 degrees and 170 degrees and the second sidewall comprises an angle from the first surface of one of the first wafer or the second wafer of between 90 degrees and 170 degrees.