InP Quantum Dots with GaP and Alp Shells and Methods of Producing the Same

Abstract

Disclosed are highly luminescent nanostructures, particularly highly luminescent quantum dots, comprising a nanocrystal core of InP and shell layers of GaP and AlP. The nanostructures may have an additional shell layer. Also provided are methods of preparing the nanostructures, films comprising the nanostructure and devices comprising the nanostructures.

1 . A nanostructure comprising an InP core and a first GaP or AlP shell. 
     
     
         2 . (canceled) 
     
     
         3 . The nanostructure of  claim 1 , further comprising a second shell surrounding the first GaP or AlP shell. 
     
     
         4 . (canceled) 
     
     
         5 . The nanostructure of  claim 1  which comprises an InP core surrounded by a first GaP shell and further surrounded by a ZnS shell. 
     
     
         6 . The nanostructure of  claim 1  which comprises an InP core surrounded by a first AlP shell and further surrounded by a ZnS shell. 
     
     
         7 . A method of making the nanostructure of  claim 1 , comprising
 (a) contacting an InP core with MX 3 , wherein M=Al or Ga, and X=an anion, and a source of phosphide in a solvent to give an InP core surrounded by a first GaP or AlP shell.   
     
     
         8 . The method of  claim 7 , further comprising isolating the nanostructure. 
     
     
         9 . (canceled) 
     
     
         10 . The method of  claim 9 , wherein the source of phosphide is (trimethylsilyl) 3 phosphine. 
     
     
         11 . The method of  claim 7 , wherein the anion is F − , Cl − , Br − , I − , OH −  or OSO 2 R − , wherein R is an alkyl or an optionally alkyl substituted aryl group. 
     
     
         12 . The method of  claim 7 , wherein said solvent is trioctylphosphine (TOP). 
     
     
         13 . (canceled) 
     
     
         14 . The method of  claim 7 , further comprising forming a second shell surrounding the InP core and the first GaP or AlP shell. 
     
     
         15 . The method of  claim 14 , wherein the second shell comprises ZnS. 
     
     
         16 . The method of  claim 15 , which comprises contacting the InP core surrounded by the first GaP or AlP shell with a source of zinc and a source of sulfur in a solvent. 
     
     
         17 . (canceled) 
     
     
         18 . The method according to  claim 16 , wherein the source of zinc is zinc dioleate. 
     
     
         19 . (canceled) 
     
     
         20 . The method according to  claim 16 , wherein the alkyl mercaptan source of sulfur is is octane-1-thiol. 
     
     
         21 . The method according to  claim 7 , wherein the solvent is trioctylphosphine (TOP). 
     
     
         22 . (canceled) 
     
     
         23 . A film comprising a matrix and a population of nanostructures of  claim 1 . 
     
     
         24 . A display device comprising:
 a layer that emits radiation;   a film layer comprising a population of nanostructures of  claim 1 , disposed on the radiation emitting layer;   an optically transparent barrier layer on the film layer; and   an optical element, disposed on the barrier layer.   
     
     
         25 . The display device of  claim 24 , wherein the radiation emitting layer, the film layer, and the optical element are part of a pixel unit of the display device. 
     
     
         26 . The display device of  claim 24 , wherein the optical element is a color filter. 
     
     
         27 . The display device of  claim 24 , wherein the barrier layer comprises an oxide. 
     
     
         28 .- 29 . (canceled)