Selective deposition of tungsten

Abstract

A method for selectively depositing a metal film onto a substrate is disclosed. In particular, the method comprising flowing a metal precursor onto the substrate and flowing a non-metal precursor onto the substrate, while contacting the non-metal precursor with a hot wire. Specifically, a reaction between a tungsten precursor and a hydrogen precursor selectively forms a tungsten film, where the hydrogen precursor is excited by a tungsten hot wire.

We claim: 
     
         1 . A method of selectively forming a film comprising metal, the method comprising:
 providing a substrate for processing in a reaction chamber and a hot wire element for contacting at least a gas;   exposing the substrate to a metal precursor; and   exposing the substrate to a gas which has been exposed to a vicinity of the hot wire;   wherein the substrate comprises at least two different materials and the metal film is selectively formed in one of the surfaces.   
     
     
         2 . The method of  claim 1 , wherein the metal precursor comprises transition metal element. 
     
     
         3 . The method of  claim 1 , wherein the metal precursor comprises a tungsten-containing precursor or a molybdenum-containing precursor. 
     
     
         4 . The method of  claim 1 , wherein the gas comprises hydrogen. 
     
     
         5 . The method of  claim 1 , wherein the selectively formed film comprises metallic material. 
     
     
         6 . The method of  claim 1 , wherein an excited, radical or atomic species is formed from the gas when the gas has been exposed to a vicinity of the hot wire. 
     
     
         7 . The method of  claim 1 , wherein the substrate comprises a first surface and a second surface. 
     
     
         8 . The method of  claim 7 , wherein the first surface comprises a transition metal. 
     
     
         9 . The method of  claim 7 , wherein the first surface comprises an oxidized metal, and underneath the oxidized metal is an elemental metal or metallic conductive film. 
     
     
         10 . The method of  claim 7 , wherein the second surface comprises Si—O bonds. 
     
     
         11 . The method of  claim 7 , wherein the second surface comprise silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon dioxide, or mixtures thereof 
     
     
         12 . The method of  claim 7 , wherein the film is selectively formed on the first surface. 
     
     
         13 . The method of  claim 1 , further comprising the step of exposing the substrate to a purge gas after the steps of exposing the substrate to the metal precursor. 
     
     
         14 . The method of  claim 1 , wherein a selectivity is above 50%. 
     
     
         15 . The method of  claim 1 , wherein the thickness of the film as above 1 nm. 
     
     
         16 . The method of  claim 1 , wherein a wall in the reaction chamber is a hot wall. 
     
     
         17 . The method of  claim 1 , wherein selectively forming the film comprises an ALD process. 
     
     
         18 . The method of  claim 1 , wherein selectively forming the film comprises a cyclic process. 
     
     
         19 . The method of  claim 1 , wherein selectively forming the film comprises cyclic or sequential CVD process. 
     
     
         20 . A reaction chamber, configured to perform the method of  claim 1 .