Polishing compositions and methods of using same

Abstract

This disclosure relates to a polishing composition that includes at least one abrasive; at least one nitride removal rate reducing agent, an acid, a base; and water. The at least one nitride removal rate reduce agent can include a hydrophobic portion containing a C16 to C22 hydrocarbon group; and a hydrophilic portion containing at least one group selected from the group consisting of a sulfinite group, a sulfate group, a sulfonate group, a carboxylate group, a phosphate group, and a phosphonate group. The polishing composition can have a pH of about 2 to about 6.5.

1 . A polishing composition comprising:
 at least one abrasive;   at least one nitride removal rate reducing agent comprising:
 a hydrophobic portion comprising a C 16  to C 22  hydrocarbon group; and 
 a hydrophilic portion comprising at least one group selected from the group consisting of a sulfinite group, a sulfate group, a sulfonate group, a carboxylate group, a phosphate group, and a phosphonate group; and; 
   an acid and a base; and   water;   wherein the polishing composition has a pH of about 2 to about 6.5.   
     
     
         2 . The polishing composition of  claim 1 , further comprising:
 at least one dishing reducing agent;   
       wherein the at least one dishing reducing agent is a compound comprising at least one group selected from the group consisting of hydroxyl, sulfate, phosphonate, phosphate, sulfonate, amine, nitrate, nitrite, carboxylate, and carbonate groups. 
     
     
         3 . The polishing composition of  claim 1 , wherein the hydrophobic portion comprises a C 16  to C 18  hydrocarbon group. 
     
     
         4 . The polishing composition of  claim 1 , wherein the hydrophilic portion comprises a phosphate group or a phosphonate group. 
     
     
         5 . The polishing composition of  claim 1 , wherein the at least one nitride removal rate reducing agent is selected from the group consisting of napthalenesulfonic acid-formalin condensate, lauryl phosphate, myristyl phosphate, stearyl phosphate, octadecylphosphonic acid, oleyl phosphate, behenyl phosphate, octadecyl sulfate, lacceryl phosphate, oleth-3-phosphate, oleth-10-phosphate, and mixtures thereof. 
     
     
         6 . The polishing composition of  claim 3 , wherein the polishing composition comprises at least two nitride removal rate reducing agents. 
     
     
         7 . The polishing composition of  claim 5 , wherein the polishing composition comprises at least two nitride removal rate reducing agents. 
     
     
         8 . The polishing composition of  claim 3 , wherein the polishing composition comprises at least three nitride removal rate reducing agents. 
     
     
         9 . The polishing composition of  claim 2 , wherein the at least one nitride removal rate reducing agent and the at least one dishing reducing agent are chemically distinct from each other. 
     
     
         10 . The polishing composition of  claim 1 , wherein the polishing composition has a ratio of a removal rate for a silicon oxide to a removal rate for a silicon nitride of at least about 3:1. 
     
     
         11 . The polishing composition of  claim 1 , wherein the polishing composition has a ratio of a removal rate for a silicon oxide to a removal rate for a silicon nitride of at least about 100:1. 
     
     
         12 . The polishing composition of  claim 1 , wherein the at least one abrasive is selected from the group consisting of cationic abrasives, substantially neutral abrasives, and anionic abrasives. 
     
     
         13 . The polishing composition of  claim 1 , wherein the at least one abrasive is selected from the group consisting of alumina, silica, titania, ceria, zirconia, co-formed products thereof, coated abrasives, surface modified abrasives, and mixtures thereof. 
     
     
         14 . The polishing composition of  claim 13 , wherein the abrasive is a silica-based abrasive. 
     
     
         15 . The composition of  claim 1 , wherein the acid is selected from the group consisting of formic acid, acetic acid, malonic acid, citric acid, propionic acid, malic acid, adipic acid, succinic acid, lactic acid, oxalic acid, hydroxyethylidene diphosphonic acid, 2-phosphono-1,2,4-butane tricarboxylic acid, aminotrimethylene phosphonic acid, hexamethylenediamine tetra(methylenephosphonic acid), bis(hexamethylene)triamine phosphonic acid, amino acetic acid, peracetic acid, potassium acetate, phenoxyacetic acid, glycine, bicine, diglycolic acid, glyceric acid, tricine, alanine, histidine, valine, phenylalanine, proline, glutamine, aspartic acid, glutamic acid, arginine, lysine, tyrosine, benzoic acid, nitric acid, sulfuric acid, sulfurous acid, phosphoric acid, phosphonic acid, hydrochloric acid, periodic acid, and mixtures thereof. 
     
     
         16 . The composition of  claim 1 , wherein the base is selected from the group consisting of potassium hydroxide, sodium hydroxide, cesium hydroxide, ammonium hydroxide, triethanolamine, diethanolamine, monoethanolamine, tetrabutylammonium hydroxide, tetramethylammonium hydroxide, lithium hydroxide, imidazole, triazole, aminotriazole, tetrazole, benzotriazole, tolytriazole, pyrazole, isothiazole, and mixtures thereof. 
     
     
         17 . A method, comprising:
 applying the polishing composition of  claim 1  to a substrate having at least a silicon nitride and at least a silicon oxide on a surface of the substrate; and   bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.   
     
     
         18 . The method of  claim 17 , wherein at least one of the silicon nitride and silicon oxide is doped with at least one dopant selected from the group consisting of carbon, nitrogen, oxygen, and hydrogen. 
     
     
         19 . The method of  claim 17 , further comprising forming a semiconductor device from the substrate. 
     
     
         20 . The method of  claim 18 , further comprising forming a semiconductor device from the substrate.