Semiconductor device and method of forming backside openings for an ultra-thin semiconductor die

Abstract

A semiconductor substrate contains a plurality of openings extending partially into a surface of the semiconductor substrate. A conductive layer is formed with a first portion of the conductive layer over a remaining portion of the surface of the semiconductor substrate between the openings and a second portion of the conductive layer in the openings. The remaining portion of the surface of the semiconductor substrate is removed to lift-off the first portion of the conductive layer while leaving the second portion of the conductive layer in the openings. The semiconductor substrate is singulated to separate the semiconductor die leaving the second portion of the conductive layer over a surface of the semiconductor die. Alternatively, a plurality of openings is formed over each semiconductor die. A conductive layer is formed over a remaining portion of the surface of the semiconductor substrate between the openings and into the openings.

What is claimed is: 
     
         1 . A method of making a semiconductor device, the method comprising:
 providing a semiconductor substrate including a plurality of semiconductor die;   forming a plurality of openings over the plurality of semiconductor die, the plurality of openings extending partially into a surface of the semiconductor substrate; and   after forming the plurality of openings, forming a conductive layer on the surface of the semiconductor substrate and into the plurality of openings.   
     
     
         2 . The method of  claim 1 , wherein the plurality of openings are arranged in multiple offset rows. 
     
     
         3 . The method of  claim 2 , wherein a boundary of the multiple offset rows corresponds with a boundary of a respective semiconductor die of the plurality of semiconductor die. 
     
     
         4 . The method of  claim 1 , wherein the plurality of openings comprise one of a hexagonal shape, a circular shape, a rectangular shape, a linear shape, or any combination thereof. 
     
     
         5 . The method of  claim 1 , wherein the plurality of openings is one of a polygonal shape or an elliptical shape. 
     
     
         6 . The method of  claim 1 , further comprising forming a support ring simultaneously with the plurality of openings. 
     
     
         7 . The method of  claim 1 , further comprising forming a support ring separately from forming the plurality of openings. 
     
     
         8 . A method of making a semiconductor device, the method comprising:
 providing a semiconductor substrate including a plurality of semiconductor die;   forming a plurality of openings each comprising a closed shape over the plurality of semiconductor die, the plurality of openings extending into a surface of the semiconductor substrate; and   after forming the plurality of openings, forming a conductive layer on the surface of the semiconductor substrate and into the plurality of openings.   
     
     
         9 . The method of  claim 8 , wherein the plurality of openings are arranged in multiple offset rows. 
     
     
         10 . The method of  claim 9 , wherein a boundary of the multiple offset rows corresponds with a boundary of a respective semiconductor die of the plurality of semiconductor die. 
     
     
         11 . The method of  claim 8 , wherein the closed shape comprises one of a hexagonal shape, a circular shape, a rectangular shape, a linear shape, or any combination thereof. 
     
     
         12 . The method of  claim 8 , wherein the closed shape comprises a polygonal shape or an elliptical shape. 
     
     
         13 . The method of  claim 8 , further comprising forming a support ring simultaneously with the plurality of openings. 
     
     
         14 . The method of  claim 8 , further comprising forming a support ring separately from forming the plurality of openings. 
     
     
         15 . A method of making a semiconductor device, the method comprising:
 providing a semiconductor substrate including a plurality of semiconductor die;   forming a pattern of a plurality of openings each comprising a closed shape over the plurality of semiconductor die, the plurality of openings formed in a surface of the semiconductor substrate; and   after forming the pattern, forming a conductive layer on the pattern.   
     
     
         16 . The method of  claim 15 , wherein the closed shape comprises one of a hexagonal shape, a circular shape, a rectangular shape, a linear shape, or any combination thereof. 
     
     
         17 . The method of  claim 15 , wherein the closed shape comprises a polygonal shape or an elliptical shape. 
     
     
         18 . The method of  claim 15 , further comprising forming a support ring simultaneously with the plurality of openings. 
     
     
         19 . The method of  claim 15 , further comprising forming a support ring separately from forming the plurality of openings. 
     
     
         20 . The method of  claim 15 , wherein forming the pattern further comprises:
 forming the pattern on the semiconductor substrate using a photoresist;   etching the plurality of openings into the semiconductor substrate; and   removing the photoresist.