US2020319516A1PendingUtilityA1
Quantum dot, color conversion panel, and display device including the same
Est. expiryFeb 14, 2037(~10.5 yrs left)· nominal 20-yr term from priority
Inventors:Kyoung Won ParkBaek Hee LeeMin Ki NamHyeok Jin LeeKeun Chan OhJae-Jin LyuBaek-Kyun JeonSungjun KohDoh Chang Lee
C09K 11/70C09K 11/62G02F 1/133514C09K 11/883C09K 11/02G02F 1/133614G02F 1/136222G02F 1/133565G02F 1/133357Y10S977/816Y10S977/818Y10S977/821Y10S977/824Y10S977/819G02F 1/133617G02F 1/1336Y10S977/825Y10S977/95Y10S977/82B82Y 30/00Y10S977/882Y10S977/952G02F 1/133512G03F 7/0007G02F 1/133528G02F 1/133509Y10S977/774B82Y 20/00G02F 2202/36G02F 1/1362B82Y 40/00G02F 2001/133614
60
PatentIndex Score
0
Cited by
0
References
0
Claims
Abstract
A quantum dot, a color conversion panel, and a display device, the quantum dot including a core; and a shell layer positioned outside of the core, wherein at least one of the core and the shell layer is doped with aluminum, silicon, titanium, magnesium, or zinc, and the core includes a Group III-V compound.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A quantum dot, comprising:
a core; and a shell layer positioned outside of the core, wherein: at least one of the core and the shell layer is doped with aluminum, silicon, titanium, magnesium, or zinc, and the core includes a Group III-V compound.
2 . The quantum dot as claimed in claim 1 , wherein the Group III-V compound includes GaN, GaP, GaAs, GaSb, AlN, AIP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AINP, AINAs, AINSb, AIPAs, AIPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAINAs, GaAINSb, GaAIPAs, GaAIPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, GaAINP, InAINP, InAINAs, InAINSb, InAIPAs, InAIPSb, or a mixture thereof.
3 . The quantum dot as claimed in claim 1 , wherein:
the core further includes a Group II-VI compound, and the core includes an alloy of the Group III-V compound and the Group II-VI compound.
4 . The quantum dot as claimed in claim 3 , wherein the Group II-VI compound includes CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, or a mixture thereof.
5 . The quantum dot as claimed in claim 1 , wherein:
the shell layer includes a first portion adjacent to the core and a second portion farther from the core than the first portion, and the second portion of the shell layer is doped with aluminum, silicon, titanium, magnesium, or zinc.
6 . The quantum dot as claimed in claim 1 , wherein
the shell layer includes a first portion adjacent to the core and a second portion farther from the core than the first portion, and the core and the first portion of the shell layer are doped with aluminum, silicon, titanium, magnesium, or zinc.
7 . The quantum dot as claimed in claim 1 , wherein:
the core includes In and P, the shell layer includes Zn, Se, or S, and at least one of the core and the shell layer is doped with aluminum.Join the waitlist — get patent alerts
Track US2020319516A1 — get alerts on status changes and closely related new filings.
We store only your email — no account needed. See our privacy policy.